FJV992 FJV992 Audio Frequency Low Noise Amplifier • Complement to FJV1845 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -120 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -120 -5 V V IC Collector Current -50 mA PC Collector Power Dissipation 300 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -120 Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -120 V BVEBO Emitter-Emitter Breakdown Voltage IE= -10µA, IC=0 -5 V IEBO Emitter-Base Cutoff Current VEB= -6V, IC=0 hFE1 hFE2 DC Current Gain VCE= -6V, IC= -0.1mA VCE= -6V, IC= -1mA -30 VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA VBE (on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.55 fT Current Gain Bandwidth Product VCE= -6V, IC= -1mA 50 Cob Output Capacitance VCB= -30V, IE=0, f=1MHz NV Noise Voltage 150 200 nA 800 -300 mV -0.65 V MHz 3 pF 40 mV hFE2 Classification Classification P F E hFE2 200 ~ 400 300 ~ 600 400 ~ 800 Marking 2J P hFE Classification ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 FJV992 Typical Characteristics -1.0 -10 IB = -1.2µ A IB = -24µ A IB = -1.0µ A -0.8 IB = -0.8µ A -0.6 IB = -0.6µ A -0.4 IB = -0.4µ A -0.2 IB = -0.2µ A IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT IB = -1.2µ A IB = -20µ A -8 IB = -16µ A -6 IB = -12µ A IB = -8µ A -4 IB = -4µ A -2 IB = 0 0.0 IB = 0 0 0 -20 -40 -60 -80 -100 0 -1 VCE[V], COLLECTOR-EMITTER VOLTAGE -3 -4 -5 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Static Characteristic -1 1000 0 Ta=25 C 0 Ta=-25 C 100 10 -1E-3 -0.01 IC=10IB VCE(SAT)[V], SATURATION VOLTAGE VCE=-6V 0 Ta=125 C hFE, DC CURRENT GAIN -2 0 -0.1 0 Ta=125 C Ta=25 C 0 Ta=-25 C -0.01 -1E-3 -0.1 IC[mA], COLLECTOR CURRENT -0.01 -0.1 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage VCE=-6V -0.10 IC[A], COLLECTOR CURRENT VBE(SAT)[V], SATURATION VOLTAGE -0.12 IC=10IB 1 0 Ta=-25 C 0 Ta=25 C 0 Ta=125 C 0.1 1E-3 0.01 0.1 IC[mA], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage ©2002 Fairchild Semiconductor Corporation -0.08 -0.06 0 Ta=125 C 0 0 Ta=-25 C Ta=25 C -0.04 -0.02 -0.00 -0.2 -0.4 -0.6 -0.8 -1.0 VBE[V], BASE-EMITTER VOLTAGE Figure 6. Base-Emitter Voltage Rev. B, November 2002 FJV992 10 Cob [pF], CAPACITANCE IE=0 f = 1MHz 1 0.1 -1 -10 -100 -1000 V CB [V], COLLECTOR-BASE VOLTAGE fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Typical Characteristics (Continued) 1000 VCE = -6V 100 10 1 0.1 1 10 100 IE[mA], COLLECTOR CURRENT Figure 7. Collector Output Capacitance Figure 8. Current Gain Bandwidth Product PC[mW], POWER DISSIPATION 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE Figure 9. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 FJV992 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1