KSC1845 KSC1845 Audio Frequency Low Noise Amplifier • Complement to KSA992 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 120 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 120 5 V V IC Collector Current 50 mA IB Base Current 10 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB=120V, IE=0 Min. Typ. Max. 50 Units nA 50 nA IEBO Emitter Cut-off Current VEB=5V, IC=0 hFE1 hFE2 DC Current Gain VCE=6V, IC=0.1mA VCE=6V, IC=1mA 150 200 580 600 1200 VBE (on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.55 0.59 0.65 VBE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.07 0.3 fT Current Gain Bandwidth Product VCE=6V, IC=1mA Cob Output Capacitance VCB=30V, IE=0, f=1MHz NL Noise Level 50 V V 110 MHz 1.6 2.5 pF 25 40 mV hFE Classification Classification P F E U hFE2 200 ~ 400 300 ~ 600 400 ~ 800 600 ~ 1200 ©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002 KSC1845 Typical Characteristics 10 1.0 IB=16µA IB=1.4µA IB=1.2µA IB=1.0µA IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT IB=14µA 8 0.8 IB=12µA IB=10µA 6 IB=8µA IB=6µA 4 IB=0.6µA IB=0.4µA 0.4 IB=4µA 2 IB=0.8µA 0.6 IB=0.2µA 0.2 IB=2µA 0 0.0 0 1 2 3 4 5 0 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic hFE, DC CURRENT GAIN 700 600 500 400 300 200 100 0.1 1 10 100 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE = 6V Pule Test 800 0 0.01 60 80 100 100 IC=10IB Pulse Test 10 VBE(sat) 1 0.1 0.01 0.1 VCE(sat) 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10k f=1MHz IE=0 1 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 10 Cob[pF], CAPACITANCE 40 Figure 2. Static Characteristic 1000 900 20 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE=6V 1k 100 10 0.1 1 10 100 IE[mA], EMITTER CURRENT Figure 6. Current Gain Bandwidth Product Rev. B2, November 2002 KSC1845 Typical Characteristics (Continued) 800 VCE = 6V Pulse Test 700 PC[mW], POWER DISSIPATION IC[mA], COLLECTOR CURRENT 100 10 1 0.1 0.01 0.4 600 500 400 300 200 100 0 0.5 0.6 0.7 0.8 0.9 VBE[V], BASE-EMITTER VOLTAGE Figure 7. Collector Current vs. Base-Emitter Voltage ©2002 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o Ta[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. B2, November 2002 KSC1845 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1