KSA992 KSA992 Audio Frequency Low Noise Amplifier • Complement to KSC1845 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -120 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -120 -5 V V IC Collector Current -50 mA IB Base Current -10 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB= -120V, IE=0 ICEO Collector Cur-off Current IEBO Emitter Cut-off Current hFE1 hFE2 DC Current Gain VCE= -6V, IC= -0.1mA VCE= -6V, IC= -1mA VBE (on) Base-Emitter On Voltage VCE= -6V, IC= -1mA VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA Min. Typ. Max. -50 Units nA VCE= -100V, IB=0 -1 µA VEB= -5mA, IC=0 -50 nA 150 200 500 500 800 -0.55 -0.61 -0.65 V -0.09 -0.3 V fT Current Gain Bandwidth Product VCE= -6V, IC= -1mA Cob Output Capacitance VCB= -30V, IE=0, f=1MHz 50 100 2 3 MHz pF NV Noise Voltage VCE = -5.0V, IC = -1.0mA, RG =100KW, GV = 80dB, f = 10Hz to 1.0KHz 25 40 mV hFE2 Classification Classification P F E hFE2 200 ~ 400 300 ~ 600 400 ~ 800 ©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 KSA992 Typical Characteristics IB = -1.2µA -10 IB = -24µA IB = -1.2µA IB = -1.0µA -0.8 IB = -0.8µA -0.6 IB = -0.6µA -0.4 IB = -0.4µA -0.2 IB = -0.2µA IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -1.0 IB = -16µA -6 IB = -12µA -4 IB = -8µA 0 -20 -40 IB = -4µA -2 IB = 0 0.0 IB = 0 0 -60 -80 -100 0 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE(sat), VBE(sat)[V], SATURATION VOLTAGE VCE= -6V hFE, DC CURRENT GAIN 800 600 400 200 -1 -10 -100 1 -1000 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Cob [pF], CAPACITANCE IE=0 f = 1MHz ©2004 Fairchild Semiconductor Corporation -5 IC = 10 - IB -1 VBE(sat) -0.1 VCE(sat) -0.01 -0.1 -1 -10 -100 Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 -100 -4 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain -10 -3 -10 IC[mA], COLLECTOR CURRENT 0.1 -1 -2 Figure 2. Static Characteristic 1000 -0.1 -1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 0 -0.01 IB = -20µA -8 1000 VCE = -6V 100 10 1 0.1 1 10 100 IE[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. B2, August 2004 KSA992 Typical Characteristics (Continued) 800 PC[mW], POWER DISSIPATION 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE Figure 7. Power Derating ©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 KSA992 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I11