KSA812 KSA812 Low Frequency Amplifier • Collector-Base Voltage : VCBO= -60V • Complement to KSC1623 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -60 Units V VCEO VEBO Collector-Emitter Voltage -50 V Emitter-Base Voltage -5 IC V Collector Current -100 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB= -60V, IE=0 IEBO Emitter Cut-off Current VEB= -5V, IC=0 hFE DC Current Gain VCE= -6V, IC= -1mA Min. Typ. Max. -0.1 Units µA 90 200 -0.1 µA -0.18 -0.3 V -0.55 -0.62 -0.65 V 600 VCE (sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA VBE (on) Base-Emitter On Voltage VCE= -6V, IC= -1mA fT Current Gain Bandwidth Product VCE= -6V, IC= -10mA 180 MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 4.5 pF hFE Classification Classification O Y G L hFE 90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600 Marking D1 O hFE grade ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA812 Typical Characteristics 1000 -50 VCE = -6V -45 -40 IB = -350µ A -35 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB = -400µ A IB = -300µ A -30 IB = -250µ A -25 IB = -200µ A -20 IB = -150µ A -15 IB = -100µ A -10 100 10 IB = -50µ A -5 1 -0.1 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 VCE[V], COLLECTOR-EMITTER VOLTAGE -10 -100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1 Figure 2. DC current Gain -10 -100 IC = 10 IB VBE(sat) -0.1 V CE(sat) IC[mA], COLLECTOR CURRENT -1 VCE = -6V -0.01 -1 -10 -100 -10 -1 -0.1 0.0 -1000 IE = 0 f = 1MHz Cob [pF], CAPACITANCE 10 1 -100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2001 Fairchild Semiconductor Corporation -0.6 -0.8 -1.0 -1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 -0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT -1 -0.2 1000 VCE = -6V 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A1, June 2001 KSA812 Package Demensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3