FRFET TM FQB9N50CF 500V N-Channel MOSFET Features Description • 9A, 500V, RDS(on) = 0.85 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 28nC) • Low Crss ( typical 24pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. • Fast switching • 100% avalanche tested • Improved dv/dt capability D D G G D2-PAK S FQB Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) IDM Drain Current - Pulsed - Continuous (TC = 100°C) (Note 1) FQB9N50CF Units 500 V 9 A 5.7 A 36 A ± 30 V 300 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 5 A EAR Repetitive Avalanche Energy (Note 1) 9.6 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25°C 4.5 V/ns 173 W 1.38 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter FQB9N50CF Units 0.72 °C/W Thermal Resistance, Junction-to-Ambient* 40 °C/W Thermal Resistance, Junction-to-Ambient 62.5 °C/W RθJC Thermal Resistance, Junction-to-Case RθJA RθJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FQB9N50CF Rev. A 1 www.fairchildsemi.com FQB9N50CF 500V N-Channel MOSFET October 2006 Device Marking Device Package Reel Size Tape Width Quantity FQB9N50CF FQB9N50CFTM D2-PAK 330mm 24mm 800 FQB9N50CFS FQB9N50CFTM_WS D2-PAK 330mm 24mm 800 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.57 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 10 µA VDS = 400 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.7 0.85 Ω -- 6.5 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5A gFS Forward Transconductance VDS = 40 V, ID = 4.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 790 1030 pF -- 130 170 pF -- 24 30 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250 V, ID = 9A, RG = 25 Ω (Note 4, 5) VDS = 400 V, ID = 9A, VGS = 10 V (Note 4, 5) -- 18 45 ns -- 65 140 ns -- 93 195 ns -- 64 125 ns -- 28 35 nC -- 4 -- nC -- 15 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9 A -- -- 1.4 V trr Reverse Recovery Time -- 100 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 9 A, dIF / dt = 100 A/µs -- 300 -- nC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 8mH, IAS = 9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQB9N50CF Rev. A 2 www.fairchildsemi.com FQB9N50CF 500V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 o 150 C ID, Drain Current [A] 1 10 0 10 o -55 C o 25 C 0 10 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test -1 -1 10 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue VGS = 10V IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 2.0 1.5 1.0 VGS = 20V 0.5 ※ Note : TJ = 25℃ 1 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 25℃ -1 0 5 10 15 20 10 25 0.2 0.4 ID, Drain Current [A] Figure 5. Capacitance Characteristics 2000 1.0 1.2 1.4 12 VGS, Gate-Source Voltage [V] 1600 Capacitance [pF] 0.8 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 1200 0.6 VSD, Source-Drain voltage [V] Coss 800 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 400 VDS = 100V 10 VDS = 250V 8 VDS = 400V 6 4 2 ※ Note : ID = 9A 0 -1 10 0 0 10 1 10 5 10 15 20 25 30 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FQB9N50CF Rev. A 0 3 www.fairchildsemi.com FQB9N50CF 500V N-Channel MOSFET Typical Performance Characteristics FQB9N50CF 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 2 10 10 µs 10ms 100ms DC Operation in This Area is Limited by R DS(on) 0 10 ID, Drain Current [A] 10 ID, Drain Current [A] 8 100 µs 1ms 1 -1 * Notes : o 1. TC = 25 C 10 6 4 2 o 2. TJ = 150 C 3. Single Pulse -2 10 10 0 10 1 2 10 10 0 25 3 50 75 100 125 150 o VDS, Drain-SourceVoltage[V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 Z? JC(t), Thermal Response D=0.5 0.2 10 -1 0.1 0.05 PDM 0.02 t1 t2 * Notes : 0 1. ZθJC(t) = 0.72 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 10 -2 single pulse -5 10 -4 10 10 -3 10 -2 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] FQB9N50CF Rev. A 4 www.fairchildsemi.com FQB9N50CF 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB9N50CF Rev. A 5 www.fairchildsemi.com FQB9N50CF 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB9N50CF Rev. A 6 www.fairchildsemi.com FQB9N50CF 500V N-Channel MOSFET Mechanical Dimensions D2-PAK Dimensions in Millimeters FQB9N50CF Rev. A 7 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 8 FQB9N50CF Rev. A www.fairchildsemi.com FQB9N50CF 500V N-Channel MOSFET TRADEMARKS