QFET ® FQD3N50C / FQU3N50C 500V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. 2.5A, 500V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 8.5pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant D D G G S I-PAK D-PAK FQD Series FQU Series G D S S Absolute Maximum Ratings Symbol Parameter FQD3N50C/FQU3N50C Units VDSS Drain-Source Voltage 500 V ID Drain Current 2.5 A 1.5 A IDM Drain Current 10 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 200 mJ IAR Avalanche Current (Note 1) 2.5 A EAR Repetitive Avalanche Energy (Note 1) 3.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 35 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) - Derate above 25°C 0.28 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter Typ Max Units 3.5 °C/W RθJC Thermal Resistance, Junction-to-Case -- RθJA Thermal Resistance, Junction-to-Ambient* -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation FQD3N50C / FQU3N50C Rev. B 1 www.fairchildsemi.com FQD3N50C / FQU3N50C 500V N-Channel MOSFET March 2008 Device Marking Device Package Reel Size Tape Width Quantity FQD3N50C FQD3N50CTM D-PAK 380mm 16mm 2500 FQD3N50C FQD3N50CTF D-PAK 380mm 16mm 2500 FQU3N50C FQU3N50CTU I-PAK - - 70 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 500 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA VDS = 400 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 2.1 2.5 Ω -- 1.5 -- S -- 280 365 pF -- 50 65 pF -- 8.5 11 pF -- 10 30 ns -- 25 60 ns -- 35 80 ns -- 25 60 ns -- 10 13 nC -- 1.5 -- nC -- 5.5 -- nC On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.25 A gFS Forward Transconductance VDS = 40 V, ID = 1.25 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time VDD = 250 V, ID = 2.5A, RG = 25 Ω (Note 4, 5) tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 400 V, ID = 2.5A, VGS = 10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 10 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A -- -- 1.4 V trr Reverse Recovery Time -- 170 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 3 A, dIF / dt = 100 A/µs -- 0.7 -- µC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 58mH, IAS =2.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2.5A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2 FQD3N50C / FQU3N50C Rev. B www.fairchildsemi.com FQD3N50C / FQU3N50C 500V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V 1 ID, Drain Current [A] 10 ID , Drain Current [A] Top : 0 10 -1 0 10 -55°C 2. 250µs Pulse Test -1 10 2 1 10 25°C 0 10 Note 1. VDS = 40V Notes : 1. 250µs Pulse Test 2. TC = 25°C -1 10 150°C 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 8.0 7.0 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 7.5 6.5 VGS = 10V 6.0 5.5 5.0 4.5 4.0 VGS = 20V 3.5 3.0 2.5 Note : TJ = 25°C 2.0 0 10 150°C 25°C Notes : 1. VGS = 0V 2. 250µs Pulse Test -1 1.5 0 2 4 6 8 10 10 0.2 ID, Drain Current [A] 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 VGS, Gate-Source Voltage [V] Capacitances [pF] 600 Ciss 400 Coss 200 Note ; 1. VGS = 0 V Crss 2. f = 1 MHz VDS = 100V VDS = 250V 8 VDS = 400V 6 4 2 Note : ID = 3A 0 -1 10 0 0 10 0 1 10 3 FQD3N50C / FQU3N50C Rev. B 5 10 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.fairchildsemi.com FQD3N50C / FQU3N50C 500V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250µA 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 1.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 TJ, Junction Temperature [°C] Figure 9. Maximum Safe Operating Area 100 150 200 Figure 10. Maximum Drain Current vs. Case Temperature 3 2 10 Operation in This Area is Limited by R DS(on) 1 10 ID, Drain Current [A] ID, Drain Current [A] 50 TJ, Junction Temperature [°C] 100 µs 1 ms 10 ms 100 ms DC 0 10 Notes : 1. TC = 25°C -1 10 2 1 2. TJ = 150°C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [°C] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response Figure 11. Transient Thermal Response Curve D = 0 .5 10 0 0 .2 N o te s : 1 . Z θ JC (t) = 3 .5 ° C /W M ax. 0 .1 2 . D uty F ac to r, D = t 1 /t 2 0 .0 5 10 3 . T JM - T C = P D M * Z θ JC (t) 0 .0 2 0 .0 1 -1 PDM t1 sin gle p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ] 4 FQD3N50C / FQU3N50C Rev. B www.fairchildsemi.com FQD3N50C / FQU3N50C 500V N-Channel MOSFET Typical Performance Characteristics (Continued) FQD3N50C / FQU3N50C 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FQD3N50C / FQU3N50C Rev. B www.fairchildsemi.com FQD3N50C / FQU3N50C 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FQD3N50C / FQU3N50C Rev. B www.fairchildsemi.com FQD3N50C / FQU3N50C 500V N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters 7 FQD3N50C / FQU3N50C Rev. B www.fairchildsemi.com FQD3N50C / FQU3N50C 500V N-Channel MOSFET Mechanical Dimensions (Continued) I-PAK Dimensions in Millimeters 8 FQD3N50C / FQU3N50C Rev. 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