UniFETTM FDB28N30 tm N-Channel MOSFET 300V, 28A, 0.129Ω Features Description • RDS(on) = 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 39nC) • Low Crss ( Typ. 35pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D D G D2-PAK G S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage -Continuous (TC = 25oC) Ratings 300 Units V ±30 V 28 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 28 A EAR Repetitive Avalanche Energy (Note 1) 25 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns -Continuous (TC = 100oC) - Pulsed PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) 112 A (Note 2) 588 mJ (Note 3) (TC = 25oC) - Derate above 25oC A 19 250 W 2.0 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.5 RθJA* Thermal Resistance, Junction to Ambient* 40 RθJA Thermal Resistance, Junction to Ambient 62.5 Units o C/W *When mounted on the minimum pad size recommended (PCB Mount) ©2007 Fairchild Semiconductor Corporation FDB28N30 Rev. A 1 www.fairchildsemi.com FDB28N30 N-Channel MOSFET June 2007 Device Marking FDB28N30 Device FDB28N30TM Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250μA, VGS = 0V, TJ = 25oC 300 - - V ID = 250μA, Referenced to 25oC - 0.4 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VDS = 300V, VGS = 0V - - 1 VDS = 240V, TC = 125oC - - 10 VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.108 0.129 Ω - 24.8 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 14A VDS = 40V, ID = 14A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 240V, ID = 28A VGS = 10V (Note 4, 5) - 1690 2250 pF - 305 405 pF - 35 50 pF - 39 50 nC - 12 - nC - 17 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 150V, ID = 28A RG = 25Ω (Note 4, 5) - 35 80 ns - 135 280 ns - 79 168 ns - 69 148 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 28 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 112 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 28A - - 1.4 V trr Reverse Recovery Time - 279 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 28A dIF/dt = 100A/μs - 2.7 - μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.5mH, IAS = 28A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 28A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB28N30 Rev. A 2 www.fairchildsemi.com FDB28N30 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted FDB28N30 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6V 5.5 V ID,Drain Current[A] ID,Drain Current[A] 100 10 10 o 150 C o -55 C o 25 C 1 * Notes : 1. 250μs Pulse Test 1 * Notes : 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.5 0.4 1 VDS,Drain-Source Voltage[V] 0.1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 4 6 8 VGS,Gate-Source Voltage[V] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.30 200 IS, Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 100 0.25 0.20 VGS = 10V 0.15 VGS = 20V o 150 C o 25 C 10 Notes: 1. VGS = 0V o 0.10 * Note : TJ = 25 C 0 25 50 ID, Drain Current [A] 1 0.0 75 Figure 5. Capacitance Characteristics 10 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] Coss * Note: 1. VGS = 0V 2. f = 1MHz Ciss 1500 Crss 0 -1 10 FDB28N30 Rev. A 0 1 10 10 VDS, Drain-Source Voltage [V] 2.0 Figure 6. Gate Charge Characteristics 4500 3000 2. 250μs Pulse Test 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 6 4 2 0 30 3 VDS = 60V VDS = 150V VDS = 240V 8 *Note: ID = 28A 0 8 16 24 32 Qg, Total Gate Charge [nC] 40 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.5 1.0 * Notes : 1. VGS = 10V 2. ID = 14A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 30 200 10μs 100 25 100μs ID, Drain Current [A] ID, Drain Current [A] 2.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area 1ms 10 10ms DC Operation in This Area is Limited by R DS(on) 1 * Notes : 0.1 o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 1 20 15 10 5 o 0.01 2.5 10 100 VDS, Drain-Source Voltage [V] 0 25 500 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 0.01 t1 0.02 0.01 t2 * Notes : Single pulse 1E-3 -5 10 FDB28N30 Rev. A PDM 0.05 o 1. ZθJC(t) = 0.5 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 -1 10 0 10 www.fairchildsemi.com FDB28N30 N-Channel MOSFET Typical Performance Characteristics (Continued) FDB28N30 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB28N30 Rev. A 5 www.fairchildsemi.com FDB28N30 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDB28N30 Rev. A 6 www.fairchildsemi.com FDB28N30 N-Channel MOSFET Mechanical Dimensions 4.50 ±0.20 9.90 ±0.20 +0.10 2.00 ±0.10 (0.75) ~3 0° 0.80 ±0.10 1.27 ±0.10 2.54 TYP 2.54 ±0.30 15.30 ±0.30 0.10 ±0.15 2.40 ±0.20 4.90 ±0.20 1.40 ±0.20 9.20 ±0.20 1.30 –0.05 1.20 ±0.20 (0.40) D2PAK ° +0.10 0.50 –0.05 2.54 TYP 9.20 ±0.20 (2XR0.45) 4.90 ±0.20 15.30 ±0.30 10.00 ±0.20 (7.20) (1.75) 10.00 ±0.20 (8.00) (4.40) 0.80 ±0.10 FDB28N30 Rev. A 7 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I26 FDB28N30 Rev. A 8 www.fairchildsemi.com FDB28N30 N-Channel MOSFET tm