UniFET
TM
FDP61N20
200V N-Channel MOSFET
Features
Description
• 61A, 200V, RDS(on) = 0.041Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 58 nC)
• Low Crss ( typical 80 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
{
z
G{
G DS
TO-220
z
z
{
FCP Series
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
IAR
FDP61N20
Unit
200
V
61
38.5
A
A
244
A
±30
V
(Note 2)
1440
mJ
Avalanche Current
(Note 1)
61
A
EAR
Repetitive Avalanche Energy
(Note 1)
41.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
417
3.3
W
W/°C
-55 to +150
°C
300
°C
(Note 1)
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
RθJC
Thermal Resistance, Junction-to-Case
--
0.3
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
©2005 Fairchild Semiconductor Corporation
FDP61N20 Rev. A
1
www.fairchildsemi.com
FDP61N20 200V N-Channel MOSFET
September 2005
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP61N20
FDP61N20
TO-220
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
200
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.2
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 200V, VGS = 0V
VDS = 160V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 30.5A
--
0.034
0.041
Ω
gFS
Forward Transconductance
VDS = 40V, ID =30.5A
--
44.5
--
S
--
2615
3380
pF
--
645
840
pF
--
80
120
pF
--
40
90
ns
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100V, ID = 61A
RG = 25Ω
(Note 4, 5)
VDS = 160V, ID = 61A
VGS = 10V
(Note 4, 5)
--
215
440
ns
--
125
260
ns
--
170
350
ns
--
58
75
nC
--
19
--
nC
--
24
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
61
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
244
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 61A
--
--
1.4
V
trr
Reverse Recovery Time
--
162
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 61A
dIF/dt =100A/µs
--
1.5
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.58mH, IAS = 61A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 61A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
FDP61N20 Rev. A
www.fairchildsemi.com
FDP61N20 200V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID, Drain Current [A]
10
ID, Drain Current [A]
Top :
2
1
10
10
2
10
1
o
150 C
o
25 C
o
-55 C
? Notes :
1. VDS = 40V
? Notes :
1. 250
Pulse Test
2. TC = 25?
탎
탎
2. 250
0
10
-1
0
10
10
1
10
2
10
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.06
2
IDR, Reverse Drain Current [A]
RDS(ON) [O ], Drain-Source On-Resistance
Pulse Test
0
0.05
VGS = 10V
0.04
0.03
VGS = 20V
10
150?
1
10
25?
? Notes :
1. VGS = 0V
탎
2. 250
? Note : TJ = 25
Pulse Test
0
0.02
0
25
50
75
100
125
10
150
0.2
0.4
ID, Drain Current [A]
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
Ciss = Cgs + Cgd (Cds = shorted)
6000
Coss = Cds + Cgd
VGS, Gate-Source Voltage [V]
Capacitances [pF]
4000
Ciss
2000
? Note ;
1. VGS = 0 V
Crss
VDS = 40V
10
Crss = Cgd
Coss
2. f = 1 MHz
VDS = 100V
VDS = 160V
8
6
4
2
? Note : ID = 61A
0
-1
10
0
10
0
1
0
10
3
FDP61N20 Rev. A
10
20
30
40
50
60
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
FDP61N20 200V N-Channel MOSFET
Typical Performance Characteristics
FDP61N20 200V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
※ Notes :
0.9
1. VGS = 0 V
2. ID = 250 µ A
0.8
-100
-50
0
50
100
150
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
200
2.5
2.0
1.5
1.0
? Notes :
1. VGS = 10 V
0.5
2. ID = 30.5 A
0.0
-100
o
TJ, Junction Temperature [ C]
-50
0
50
100
150
200
o
TJ, Junction Temperature [ C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
3
10
70
10 µs
1
10
ID, Drain Current [A]
ID, Drain Current [A]
60
100 µs
1 ms
10 ms
DC 100 ms
2
10
Operation in This Area
is Limited by R DS(on)
0
10
? Notes :
o
1. TC = 25 C
-1
10
40
30
20
o
2. TJ = 150 C
10
3. Single Pulse
-2
10
50
0
10
1
0
25
2
10
10
50
VDS, Drain-Source Voltage [V]
75
100
125
150
TC, Case Temperature [? ]
D = 0 .5
10
-1
0 .2
PDM
0 .1
t1
0 .0 5
10
t2
0 .0 2
0 .0 1
-2
?
3 . T JM - T C = P D M * Z ?
s in g le p u ls e
10
-5
N o te s :
1 . Z ? JC ( t) = 0 .3 ? /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
Z?
JC
(t), Thermal Response
Figure 11. Transient Thermal Response Curve
10
-4
10
-3
10
-2
10
-1
10
0
JC
( t)
10
1
t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]
4
FDP61N20 Rev. A
www.fairchildsemi.com
FDP61N20 200V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
tp
5
FDP61N20 Rev. A
VDS (t)
VDD
DUT
10V
ID (t)
Time
www.fairchildsemi.com
FDP61N20 200V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
6
FDP61N20 Rev. A
www.fairchildsemi.com
FDP61N20 200V N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
7
FDP61N20 Rev. A
www.fairchildsemi.com
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST®
ActiveArray™
FASTr™
Bottomless™
FPS™
Build it Now™
FRFET™
CoolFET™
GlobalOptoisolator™
CROSSVOLT™ GTO™
DOME™
HiSeC™
EcoSPARK™
I2C™
E2CMOS™
i-Lo™
EnSigna™
ImpliedDisconnect™
FACT™
IntelliMAX™
FACT Quiet Series™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16