UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D D G G S 2 2 D -PAK I -PAK G D S FDB Series FDI Series S Absolute Maximum Ratings Symbol Parameter FDB33N25 / FDI33N25 Unit 250 V 33 20.4 A A 132 A ±30 V Single Pulsed Avalanche Energy (Note 2) 918 mJ Avalanche Current (Note 1) 33 A EAR Repetitive Avalanche Energy (Note 1) 23.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 235 1.89 W W/°C -55 to +150 °C 300 °C VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR (Note 1) (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case -- 0.53 °C/W RθJA* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FDB33N25 / FDI33N25 Rev A 1 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET May 2006 Device Marking Device Package Reel Size Tape Width Quantity FDB33N25 FDB33N25TM D2-PAK 330mm 24mm 800 FDI33N25 FDI33N25TU I2-PAK - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.25 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 16.5A -- 0.077 0.094 Ω gFS Forward Transconductance VDS = 40V, ID =16.5A -- 26.6 -- S -- 1640 2135 pF -- 330 430 pF -- 39 59 pF -- 35 80 ns -- 230 470 ns -- 75 160 ns -- 120 250 ns -- 36.8 48 nC -- 10 -- nC -- 17 -- nC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125V, ID = 33A RG = 25Ω (Note 4, 5) VDS = 200V, ID = 33A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 33A -- -- 1.4 V trr Reverse Recovery Time -- 220 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 33A dIF/dt =100A/μs -- 1.71 -- μC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.35mH, IAS = 33A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 33A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB33N25 / FDI33N25 Rev A 2 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS 2 10 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] ID, Drain Current [A] Figure 2. Transfer Characteristics 1 10 10 2 10 1 o 150 C o 25 C o -55 C * Notes : 1. VDS = 40V * Notes : 1. 250μs Pulse Test o 2. TC = 25 C 0 10 -1 0 10 2. 250μs Pulse Test 10 1 10 10 0 2 4 6 VDS, Drain-Source Voltage [V] 8 10 12 V GS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.25 2 0.20 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 10 VGS = 10V 0.15 0.10 VGS = 20V 0.05 1 10 o 150 C o 25 C * Notes : 1. VGS = 0V o * Note : TJ = 25 C 0.00 2. 250μs Pulse Test 0 0 20 40 60 80 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 4000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd VGS, Gate-Source Voltage [V] Capacitances [pF] 3000 Coss Ciss 2000 1000 * Note ; 1. VGS = 0 V Crss VDS = 50V 10 Crss = Cgd 2. f = 1 MHz VDS = 125V VDS = 200V 8 6 4 2 * Note : ID = 33A 0 -1 10 0 0 10 1 10 FDB33N25 / FDI33N25 Rev A 0 10 20 30 40 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 16.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 o -50 TJ, Junction Temperature [ C] 0 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 40 10 μs 2 10 30 ID, Drain Current [A] ID, Drain Current [A] 100 μs 1 ms 10 ms 100 ms DC 1 10 Operation in This Area is Limited by R DS(on) 0 10 * Notes : o 1. TC = 25 C 20 10 o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 1 0 25 2 10 10 50 75 100 125 150 o TC, Case Temperature [ C] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve ZθJC(t), Thermal Response 10 0 D =0.5 10 0.2 -1 PDM 0.1 t1 0.05 10 0.02 0.01 -2 t2 * N o te s : o 1 . Z θ JC (t) = 0 .5 3 C /W M ax. single pulse 2 . D u ty F a ctor, D = t 1 /t 2 3 . T JM - T C = P D M * Z θ JC (t) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q uare W ave P ulse D uration [sec] FDB33N25 / FDI33N25 Rev A 4 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) FDB33N25 / FDI33N25 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB33N25 / FDI33N25 Rev A 5 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDB33N25 / FDI33N25 Rev A 6 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET Mechanical Dimensions D2-PAK FDB33N25 / FDI33N25 Rev A 7 www.fairchildsemi.com I2-PAK 4.50 ±0.20 (0.40) 9.90 ±0.20 +0.10 MAX13.40 9.20 ±0.20 (1.46) 1.20 ±0.20 1.30 –0.05 5° (4 0.80 ±0.10 2.54 TYP 10.08 ±0.20 1.47 ±0.10 MAX 3.00 (0.94) 13.08 ±0.20 ) 1.27 ±0.10 +0.10 0.50 –0.05 2.54 TYP 2.40 ±0.20 10.00 ±0.20 FDB33N25 / FDI33N25 Rev A 8 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 9 FDB33N25 / FDI33N25 Rev A www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET TRADEMARKS