VISHAY TLMO3101

TLMG/H/O/P/Y310.
Vishay Semiconductors
Standard SMD LED PLCC-2
FEATURES
• SMD LEDs with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement
e3
equipment
• EIA and ICE standard package
• Compatible with infrared, vapor phase and wave
solder processes according to CECC
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
IVmax/IVmin ≤ 1.6
• Lead (Pb)-free device
94 8553
DESCRIPTION
These devices have been designed to meet the
increasing demand for surface mounting technology.
The package of the TLM.310. is the PLCC-2
(equivalent to a size B tantalum capacitor).
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-2
• Product series: standard
• Angle of half intensity: ± 60°
APPLICATIONS
• Automotive: backlighting in dashboards and
switches
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video
equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY
TECHNOLOGY
TLMH3100
Red, IV > 2.5 mcd
GaAsP on GaP
TLMH3101
Red, IV = (4 to 12.5) mcd
GaAsP on GaP
TLMH3102
Red, IV = (6.3 to 20) mcd
GaAsP on GaP
TLMO3100
Soft orange, IV > 2.5 mcd
GaAsP on GaP
TLMO3101
Soft orange, IV = (4 to 12.5) mcd
GaAsP on GaP
TLMY3100
Yellow, IV > 2.5 mcd
GaAsP on GaP
TLMY3102
Yellow, IV = (6.3 to 20) mcd
GaAsP on GaP
TLMG3100
Green, IV > 4 mcd
GaP on GaP
TLMG3102
Green, IV = (10 to 20) mcd
GaP on GaP
TLMG3105
Green, IV = (6.3 to 20) mcd
GaP on GaP
TLMP3100
Pure green, IV > 1 mcd
GaP on GaP
TLMP3101
Pure green, IV = (1.6 to 5) mcd
GaP on GaP
TLMP3107
Pure green, IV = (2.5 to 5) mcd
GaP on GaP
TLMP3102
Pure green, IV = (2.5 to 8) mcd
GaP on GaP
Document Number 83032
Rev. 1.8, 12-Sep-07
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1
TLMG/H/O/P/Y310.
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) TLMG310. ,TLMH310. TLMO310. ,TLMP310. ,TLMY310
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
6
V
Reverse voltage
Tamb ≤ 60 °C
IF
30
mA
tp ≤ 10 µs
IFSM
0.5
A
Tamb ≤ 60 °C
PV
100
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 55 to + 100
°C
Tsd
260
°C
RthJA
400
K/W
DC forward current
Surge forward current
Power dissipation
Junction temperature
t≤5s
Soldering temperature
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm2)
Note:
1) T
amb = 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMH310., RED
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
TYP.
TLMH3100
IV
MAX
UNIT
2.5
6
TLMH3101
IV
4
12.5
mcd
20
mcd
625
nm
mcd
Luminous intensity 2)
IF = 10 mA
IV
6.3
Dominant wavelength
IF = 10 mA
λd
612
Peak wavelength
IF = 10 mA
λp
635
nm
Angle of half intensity
IF = 10 mA
ϕ
± 60
deg
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
VR = 0, f = 1 MHz
Cj
TLMH3102
Junction capacitance
2
6
2.8
V
15
V
15
pF
Note:
1)
Tamb = 25 °C, unless otherwise specified
2)
In one packing unit IVmax/IVmin ≤ 1.6
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLM0310., SOFT ORANGE
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
TYP.
TLMO3100
IV
2.5
8
TLMO3101
IV
4
598
MAX
UNIT
12.5
mcd
611
nm
mcd
Luminous intensity 2)
IF = 10 mA
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
605
nm
Angle of half intensity
IF = 10 mA
ϕ
± 60
deg
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
VR = 0, f = 1 MHz
Cj
Junction capacitance
2
6
2.8
V
15
V
15
pF
Note:
1)
Tamb = 25 °C, unless otherwise specified
2)
In one packing unit IVmax/IVmin ≤ 1.6
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2
Document Number 83032
Rev. 1.8, 12-Sep-07
TLMG/H/O/P/Y310.
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMY310., YELLOW
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN
TYP.
IF = 10 mA
TLMY3100
IV
2.5
6
TLMY3102
IV
IF = 10 mA
λd
Luminous intensity 2)
Dominant wavelength
MAX
UNIT
6.3
20
mcd
581
594
nm
mcd
Peak wavelength
IF = 10 mA
λp
585
nm
Angle of half intensity
IF = 10 mA
ϕ
± 60
deg
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
VR = 0, f = 1 MHz
Cj
Junction capacitance
2.1
6
2.8
V
15
V
15
pF
Note:
1)
Tamb = 25 °C, unless otherwise specified
2) In one packing unit I
Vmax/IVmin ≤ 1.6
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMG310., GREEN
PARAMETER
Luminous intensity
TEST CONDITION
2)
IF = 10 mA
PART
SYMBOL
MIN
TYP.
TLMG3100
IV
4
9
TLMG3102
IV
10
MAX
UNIT
20
mcd
mcd
mcd
IV
6.3
20
Dominant wavelength
IF = 10 mA
λd
562
575
Peak wavelength
IF = 10 mA
λp
565
TLMG3105
Angle of half intensity
IF = 10 mA
ϕ
± 60
Forward voltage
IF = 20 mA
VF
2.2
Reverse voltage
IR = 10 µA
VR
VR = 0, f = 1 MHz
Cj
Junction capacitance
6
nm
nm
deg
2.8
V
15
V
15
pF
Note:
Tamb = 25 °C, unless otherwise specified
2) In one packing unit I
Vmax/IVmin ≤ 1.6
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMP310., PURE GREEN
PARAMETER
TEST CONDITION
Luminous intensity 2)
IF = 10 mA
PART
SYMBOL
MIN
TYP.
TLMP3100
IV
1
4
TLMP3101
IV
1.6
5
mcd
TLMP3102
IV
2.5
8
mcd
TLMP3107
IV
2.5
5
mcd
555
565
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
555
Angle of half intensity
IF = 10 mA
ϕ
± 60
Forward voltage
IF = 20 mA
VF
2.1
Reverse voltage
IR = 10 µA
VR
VR = 0, f = 1 MHz
Cj
Junction capacitance
6
MAX
UNIT
mcd
nm
nm
deg
2.8
V
15
V
15
pF
Note:
1)
Tamb = 25 °C, unless otherwise specified
2)
In one packing unit IVmax/IVmin ≤ 1.6
Document Number 83032
Rev. 1.8, 12-Sep-07
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TLMG/H/O/P/Y310.
Vishay Semiconductors
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
0°
IV rel - Relative Luminous Intensity
PV - Power Dissipation (mW)
125
100
75
50
25
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0
0
20
40
60
80
100
95 10319
0.6
0.4
0.2
0
0.2
0.4
0.6
Tamb - Ambient Temperature (°C)
95 10904
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
60
red
I F - Forward Current (mA)
IF - Forward Current (mA)
100
50
40
30
20
10
0
0
20
40
60
80
0
I v rel - Relative Luminous Intensity
I F - Forward Current (mA)
5
2.0
Tamb < 60 °C
t p /T = 0.005
0.01
1000
0.02
0.05
0.2
0.5
DC
10
1
0.01
0.1
0.1
1
10
100
t p - Pulse Length (ms)
Figure 3. Pulse Forward Current vs. Pulse Duration
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4
2
3
4
V F - Forward Voltage (V)
Figure 5. Forward Current vs. Forward Voltage
10000
95 9985
1
95 9989
Figure 2. Forward Current vs. Ambient Temperature for InGaN
100
1
0.1
100
Tamb - Ambient Temperature (°C)
95 10905
10
red
1.6
1.2
0.8
0.4
0
0
95 9993
20
40
60
80
Tamb - Ambient Temperature (°C)
100
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83032
Rev. 1.8, 12-Sep-07
TLMG/H/O/P/Y310.
Vishay Semiconductors
100
soft orange
red
2.0
I F - Forward Current (mA)
IV rel - Relative Luminous Intensity
2.4
1.6
1.2
0.8
95 10321
0.1
10
1
20
0.5
50
0.2
100
0.1
500 IF (mA)
0.02 tP/T
200
0.05
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
0
2
3
4
5
V F - Forward Voltage (V)
Figure 10. Forward Current vs. Forward Voltage
2.0
10
red
1
0.1
soft orange
1.6
1.2
0.8
0.4
0
0.01
1
10
0
100
Figure 8. Relative Luminous Intensity vs. Forward Current
40
60
80
100
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
2.4
1.2
I V re l - Relative Luminous Intensity
red
1.0
0.8
0.6
0.4
0.2
0
590
20
Tamb - Ambient Temperature (°C)
95 9994
I F - Forward Current (mA)
95 9995
95 10040
1
95 9990
IV rel - Relative Luminous Intensity
I v rel - Relative Luminous Intensity
1
0.4
0
I V re l - Relative Luminous Intensity
10
soft orange
2.0
1.6
1.2
0.8
0.4
0
610
630
650
670
690
λ - Wavelength (nm)
Figure 9. Relative Intensity vs. Wavelength
Document Number 83032
Rev. 1.8, 12-Sep-07
95 10259
10
20
50
100
200
500 I F (mA)
1
0.5
0.2
0.1
0.05
0.02
tp /T
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
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5
TLMG/H/O/P/Y310.
10
2.0
soft orange
I v rel - Relative Luminous Intensity
I v rel - Relative Luminous Intensity
Vishay Semiconductors
1
0.1
yellow
1.6
1.2
0.8
0.4
0.01
0
1
10
100
I F - Forward Current (mA)
95 9997
0
Figure 13. Relative Luminous Intensity vs. Forward Current
60
80
100
2.4
soft orange
I v rel - Relative Luminous Intensity
IVrel - Relative Luminous Intensity
40
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0
570
yellow
2.0
1.6
1.2
0.8
0.4
0
590
610
630
650
670
λ - Wavelength (nm)
95 10324
95 10260
Figure 14. Relative Intensity vs. Wavelength
10
1
20
0.5
50
0.2
100
0.1
200
0.05
500 I F (mA)
0.02 tp /T
Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
100
I v rel - Relative Luminous Intensity
10
yellow
10
1
I
F
- Forward Current (mA)
20
T amb - Ambient Temperature (°C)
95 9992
0.1
yellow
1
0.1
0.01
0
95 9987
1
2
3
4
5
V F - Forward Voltage (V)
Figure 15. Forward Current vs. Forward Voltage
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6
1
95 9999
100
10
I F - Forward Current (mA)
Figure 18. Relative Luminous Intensity vs. Forward Current
Document Number 83032
Rev. 1.8, 12-Sep-07
TLMG/H/O/P/Y310.
Vishay Semiconductors
1.2
I v rel - Specific Luminous Intensity
2.4
IV rel - Relative Luminous Intensity
yellow
1.0
0.8
0.6
0.4
0.2
0
550
590
610
630
1.2
0.8
0.4
650
λ - Wavelength (nm)
95 10263
Figure 19. Relative Intensity vs. Wavelength
green
10
1
10
20
50
100
200
500
IF (mA)
1
0.5
0.2
0.1
0.05
0.02
t p /T
Figure 22. Specific Luminous Intensity vs. Forward Current
I v rel - Relative Luminous Intensity
100
I F - Forward Current (mA)
1.6
0
570
95 10039
10
green
1
0.1
0.01
0.1
0
1
2
3
4
1
5
V F - Forward Voltage (V)
95 9986
10
100
I F - Forward Current (mA)
95 9996
Figure 20. Forward Current vs. Forward Voltage
Figure 23. Relative Luminous Intensity vs. Forward Current
2.0
1.2
green
IVrel - Relative Luminous Intensity
I v rel - Relative Luminous Intensity
green
2.0
1.6
1.2
0.8
0.4
0
0
95 10320
20
40
60
80
100
T amb - Ambient Temperature (°C)
Figure 21. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83032
Rev. 1.8, 12-Sep-07
green
1.0
0.8
0.6
0.4
0.2
0
520
95 10038
540
560
580
600
620
λ - Wavelength (nm)
Figure 24. Relative Intensity vs. Wavelength
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TLMG/H/O/P/Y310.
Vishay Semiconductors
100
10
I Vrel - Relative Luminous Intensity
I F - Forward Current (mA)
pure green
10
1
0.1
1
0.1
0.01
1
0
3
2
4
5
1
95 9998
V F - Forward Voltage (V)
95 9988
Figure 25. Forward Current vs. Forward Voltage
10
I F - Forward Current (mA)
100
Figure 28. Relative Luminous Intensity vs. Forward Current
1.2
2.0
pure green
I Vrel - Relative Luminous Intensity
I Vrel - Relative Luminous Intensity
pure green
1.6
1.2
0.8
0.4
0
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
95 9991
pure green
1.0
0.8
0.6
0.4
0.2
0
500
95 10325
Figure 26. Rel. Luminous Intensity vs. Ambient Temperature
520
540
560
580
600
λ - Wavelength (nm)
Figure 29. Relative Intensity vs. Wavelength
I Spec - Specific Luminous Flux
2.4
pure green
2.0
1.6
1.2
0.8
0.4
0
10
95 10261
100
1000
I F - Forward Current (mA)
Figure 27. Specific Luminous Intensity vs. Forward Current
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Document Number 83032
Rev. 1.8, 12-Sep-07
TLMG/H/O/P/Y310.
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
3.5 ± 0.2
0.9
1.75 ± 0.10
technical drawings
according to DIN
specifications
Mounting Pad Layout
Pin identification
area covered with
solder resist
4
2.6 (2.8)
A
2.8
C
2.2
+ 0.15
1.2
4
1.6 (1.9)
?
3
2.4
+ 0.15
Drawing-No.: 6.541-5025.01-4
Issue: 8; 22.11.05
95 11314-1
Document Number 83032
Rev. 1.8, 12-Sep-07
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9
TLMG/H/O/P/Y310.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 83032
Rev. 1.8, 12-Sep-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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