MP4304 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) MP4304 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. · Small package by full molding (SIP 12 pin) · High collector power dissipation (4 devices operation) · High collector current: IC (DC) = 3 A (max) · High DC current gain: hFE = 600 (min) (VCE = 2 V, IC = 1 A) Unit: mm : PT = 4.4 W (Ta = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 7 V DC IC 3 Pulse ICP 5 IB 0.5 A PC 2.2 W PT 4.4 W Tj 150 °C Tstg −55 to 150 °C Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range A JEDEC ― JEITA ― TOSHIBA 2-32C1B Weight: 3.9 g (typ.) Array Configuration 2 1 3 5 4 9 8 10 11 12 6 7 1 2002-11-20 MP4304 Thermal Characteristics Characteristics Thermal resistance of junction to ambient Symbol Max Unit ΣRth (j-a) 28.4 °C/W TL 260 °C (4 devices operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 A ― ― 10 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 A ― ― 10 µA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 80 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 80 ― ― V hFE (1) VCE = 2 V, IC = 1 A 600 ― ― hFE (2) VCE = 2 V, IC = 2 A 150 ― ― DC current gain Collector-emitter VCE (sat) IC = 1.5 A, IB = 15 mA ― 0.25 0.5 Base-emitter VBE (sat) IC = 1.5 A, IB = 15 mA ― ― 1.2 fT VCE = 2 V, IC = 0.1 A ― 85 ― MHz VCB = 10 V, IE = 0 A, f = 1 MHz ― 50 ― pF ― 0.4 ― ― 2.6 ― ― 1.3 ― Transition frequency Collector output capacitance Turn-on time Cob ton Input Storage time 20 µs tstg IB2 IB1 Switching time V µs VCC = 30 V IB2 Fall time Output IB1 20 Ω Saturation voltage ― tf IB1 = −IB2 = 15 mA, duty cycle ≤ 1% Flyback-Diode Rating and Characteristics (Ta = 25°C) Characteristics Maximum forward current Symbol Test Condition Min Typ. Max Unit IFM ― ― ― 3 A Reverse current IR VR = 80 V ― ― 0.4 µA Reverse voltage VR IR = 100 µA 80 ― ― V Forward voltage VF IF = 1 A ― ― 1.5 V 2 2002-11-20 MP4304 IC – VCE IC – VBE 3.2 3 Common 10 20 1.5 1 1 IB = 0.5 mA 0.5 (A) 2 2 2.4 2.0 Collector current Collector current IC (A) Ta = 25°C IC 5 Common emitter 2.8 emitter 2.5 VCE = 1 V 1.6 Ta = 100°C −55 25 1.2 0.8 0.4 0 0 1 2 3 4 5 Collector-emitter voltage 6 VCE 0 0 7 0.2 (V) 0.4 0.6 0.8 1.0 Base-emitter voltage VBE hFE – IC 1.2 1.4 (V) VCE – IB 3000 0.5 Common emitter (V) VCE 25 1000 Ta = −55°C Collector-emitter voltage DC current gain hFE 100 300 100 Common emitter VCE = 1 V 30 0.01 0.03 0.1 0.3 Collector current IC 1 Ta = 25°C 0.4 0.3 IC = 3 A 0.2 2 0.1 1 0.5 0.1 3 0 0.3 (A) 1 3 10 Base current VCE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) IC/IB = 100 0.5 0.3 0.1 Ta = 100°C −55 0.03 0.01 0.03 100 300 1000 (mA) 10 Common emitter 0.05 IB VBE (sat) – IC 3 1 30 0.1 25 0.3 0.5 Collector current IC 1 3 Common emitter 5 IC/IB = 100 3 1 0.5 25 0.3 100 0.1 0.01 5 (A) Ta = −55°C 0.03 0.1 0.3 0.5 Collector current 3 IC 1 3 5 (A) 2002-11-20 MP4304 100 Transient thermal resistance rth (°C/W) rth – tw Curves should be applied in thermal limited area. Below figure show thermal resistance per 1 unit versus pulse width. This curve is obtained by using single nonrepetitive pulse with no heat sink and attached on a circuit board. (3) (1) (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 10 (4) (2) 1 Circuit board 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area PT – Ta 8 Attached on a circuit board (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation PT (W) 30 IC max (pulsed)* 100 µs* 1 ms* 3 10 ms* 6 (4) 4 (3) Circuit board (2) 2 0 0 1 (1) 40 80 120 160 200 Ambient temperature Ta (°C) 0.5 0.3 *: Single nonrepetitive pulse Ta = 25°C 0.1 Curves must be derated linearly with increase in temperature. 10 30 50 Collector-emitter voltage VCE 160 100 (°C) 0.05 5 ∆Tj – PT VCEO max 200 (V) Channel temperature increase ∆Tj Collector current IC (A) 5 Total power dissipation 10 (1) (2) (3) (4) 120 80 Circuit board Attached on a circuit board 40 0 0 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 2 4 6 Total power dissipation 4 8 PT 10 (W) 2002-11-20 MP4304 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-11-20