MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4021 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 10 pins) • High collector power dissipation (4-device operation) Unit: mm : PT = 4 W (Ta = 25°C) • High collector current: IC (DC) = 2 A (max) • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Zener diode included between collector and base. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 85 V Collector-emitter voltage VCEO 100 ± 15 V Emitter-base voltage VEBO 8 V IC 2 ICP 3 IB 0.5 A PC 2.0 W PT 4.0 W Tj 150 °C Tstg −55 to 150 °C DC Collector current Pulse Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) Junction temperature Storage temperature range A JEDEC ― JEITA ― TOSHIBA 2-25A1A Weight: 2.1 g (typ.) Array Configuration 3 5 4 2 7 6 9 8 10 1 R1 R2 R1 ≈ 5 kΩ, R2 ≈ 300 Ω 1 2004-07-01 MP4021 Thermal Characteristics Characteristics Thermal resistance from junction to ambient Symbol Max Unit ΣRth (j-a) 31.3 °C/W TL 260 °C (4-device operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 A ― ― 10 µA Collector cut-off current ICEO VCE = 80 V, IB = 0 A ― ― 10 µA Emitter cut-off current IEBO VEB = 8 V, IC = 0 A 0.8 ― 4.0 mA V (BR) CEO IC = 10 mA, IE = 0 A 85 100 115 V hFE VCE = 2 V, IC = 1 A 2000 ― ― ― Collector-emitter VCE (sat) IC = 1 A, IB = 1 mA ― ― 1.5 Base-emitter VBE (sat) IC = 1 A, IB = 1 mA ― ― 2.0 VCE = 2 V, IC = 0.5 A ― 100 ― MHz VCB = 10 V, IE = 0 A, f = 1 MHz ― 20 ― pF ― 0.45 ― ― 2.0 ― ― 0.4 ― DC current gain Saturation voltage Transition frequency fT Collector output capacitance Cob Turn-on time ton Input Storage time 20 µs tstg IB2 IB2 IB1 Switching time Fall time IB1 Output 30 Ω Collector- emitter breakdown voltage V µs VCC = 30 V tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% Marking MP4021 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-01 MP4021 IC – VCE IC – VBE 4 4 Common emitter Common emitter 3 VCE = 2 V 0.5 1 IC (A) 3 0.5 Collector current Collector current IC (A) Ta = 25°C 0.3 2 0.2 1 IB = 0.13 mA 3 2 1 Ta = 100°C 25 −55 0 0 2 4 6 Collector-emitter voltage 8 VCE 0 0 10 0.8 (V) 1.6 Base-emitter voltage hFE – IC (V) (V) Common emitter 3000 Ta = 100°C 1000 25 500 −55 2.0 2.5 1.5 1.5 1.0 IC = 3.0 A 2.0 1.0 0.5 0.1 0.5 ) 300 Ta = 25°C 2.5 VCE VCE = 2 V Collector-emitter voltage hFE VBE 4.0 3.0 Common emitter DC current gain 3.2 VCE – IB 10000 5000 2.4 0 0.03 0.05 0.1 0.3 0.5 1 3 0 0.03 5 0.1 0.3 1 VCE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 100 300 1000 IB (mA) 10 Common emitter IC/IB = 500 5 3 Ta = −55°C 25 0.3 0.1 30 VBE (sat) – IC 10 0.5 10 Base current Collector current IC (A) 1 3 100 0.3 0.5 1 3 5 Common emitter 3 Ta = −55°C 1 Collector current IC (A) 25 100 0.5 0.3 0.1 10 IC/IB = 500 5 0.3 0.5 1 Collector current 3 3 5 10 IC (A) 2004-07-01 MP4021 rth – tw 300 (°C/W) Curves should be applied in thermal rth 100 (4) limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (1) Transient thermal resistance 30 (3) (2) 10 3 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation 1 (3) 3-device operation (4) 4-device operation 0.3 0.001 0.01 0.1 1 Pulse width Circuit board 10 tw 100 1000 (s) Safe Operating Area PT – Ta 8 IC max (pulsed)* PT 3 100 µs* Total power dissipation 1 0.3 (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board 6 4 (4) Circuit board (3) (2) 2 (1) 0.1 0 0 0.03 *: Single nonrepetitive pulse Ta = 25°C 10 80 120 160 Ta 200 (°C) VCEO max 30 Collector-emitter voltage 100 VCE 300 (V) ∆Tj – PT 160 (°C) 3 ∆Tj 0.01 1 40 Ambient temperature Curves must be derated linearly with increase in temperature. Junction temperature increase IC (A) 1 ms* Collector current (1) 1-device operation (W) 10 (1) (2) (3) 80 Circuit board Attached on a circuit board 40 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 0 0 1 2 3 Total power dissipation 4 (4) 120 4 PT 5 (W) 2004-07-01 MP4021 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-01