Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1034 and 2SA1035 Unit: mm ■ Features 2SC2405 base voltage 2SC2406 Collector to 2SC2405 35 VCBO V 55 35 VCEO emitter voltage 2SC2406 VEBO 5 V Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1.45 0.95 +0.1 0.4 –0.05 1.9±0.2 0.95 0.1 to 0.3 0.4±0.2 V 55 Emitter to base voltage ■ Electrical Characteristics 2 Unit +0.1 Collector to Ratings 3 0.16 –0.06 Symbol 1 1:Base 2:Emitter 3:Collector 0 to 0.1 Parameter (Ta=25˚C) 0.65±0.15 0.8 ■ Absolute Maximum Ratings +0.25 1.5 –0.05 0.65±0.15 +0.2 ● 2.8 –0.3 2.9 –0.05 ● +0.2 Low noise voltage NV. High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.2 1.1 –0.1 ● JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : S(2SC2405) T(2SC2406) (Ta=25˚C) Symbol Parameter Conditions min typ max Unit ICBO VCB = 10V, IE = 0 100 nA ICEO VCE = 10V, IB = 0 1 µA VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 Forward current transfer ratio hFE* VCB = 5V, IE = –2mA Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA Base to emitter voltage VBE VCE = 1V, IC = 100mA 0.7 Transition frequency fT VCB = 5V, IE = –2mA, f = 200MHz 200 MHz 110 mV Collector cutoff current Collector to base 2SC2405 voltage 2SC2406 Collector to emitter 2SC2405 voltage 2SC2406 Noise voltage *h FE VCE = 10V, IC = 1mA, GV = 80dB NV Rg = 100kΩ, Function = FLAT 35 V 55 35 V 55 5 V 180 700 0.6 V 1 V Rank classification Marking Symbol Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 2SC2405 SR SS ST 2SC2406 TR TS TT 1 2SC2405, 2SC2406 Transistor PC — Ta IC — VCE 225 Ta=25˚C 175 150 125 100 75 50 IB=350µA 120 300µA 100 250µA 80 200µA 60 150µA 100µA 40 50µA 02 25 60 80 100 120 140 160 2 Collector to emitter saturation voltage VCE(sat) (V) VCE=5V 100 –25˚C 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 300 250 200 150 100 50 –10 10 12 0 0.1 10 3 1 0.3 25˚C Ta=75˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 –30 Emitter current IE (mA) –100 0.4 0.5 1000 30 VCE=5V 900 800 700 600 500 Ta=75˚C 400 25˚C –25˚C 300 200 100 0 0.1 100 0.3 1 3 10 30 100 Collector current IC (mA) NV — VCE 10 160 IE=0 f=1MHz Ta=25˚C 9 IC=1mA GV=80dB Function=FLAT 140 8 7 6 5 4 3 2 120 Rg=100kΩ 100 80 60 22kΩ 40 4.7kΩ 20 1 0 0.1 0.3 hFE — IC 30 0.1 0.2 Base current IB (mA) Noise voltage NV (mV) 350 –3 8 Collector current IC (mA) Collector output capacitance Cob (pF) 400 –1 40 Cob — VCB VCB=5V Ta=25˚C 0 – 0.1 – 0.3 6 IC/IB=10 fT — IE 450 4 100 Base to emitter voltage VBE (V) 500 60 VCE(sat) — IC 120 Ta=75˚C 80 Collector to emitter voltage VCE (V) IC — VBE 25˚C 100 0 0 Forward current transfer ratio hFE 40 120 20 0 20 Ambient temperature Ta (˚C) Collector current IC (mA) VCE=5V Ta=25˚C 140 Collector current IC (mA) 200 0 Transition frequency fT (MHz) 160 140 0 2 IC — I B 160 Collector current IC (mA) Collector power dissipation PC (mW) 250 0 0.3 1 3 10 30 100 Collector to base voltage VCB (V) 1 3 10 30 100 Collector to emitter voltage VCE (V) Transistor 2SC2405, 2SC2406 NV — VCE NV — IC 240 IC=1mA GV=80dB Function=RIAA 180 120 22kΩ 60 4.7kΩ 3 VCE=10V GV=80dB Function=RIAA VCE=10V GV=80dB Function=FLAT 120 100 Rg=100kΩ 80 60 22kΩ 40 4.7kΩ 240 180 Rg=100kΩ 120 22kΩ 60 4.7kΩ 20 0 1 300 140 Noise voltage NV (mV) Noise voltage NV (mV) Rg=100kΩ 10 30 0 0.01 100 Collector to emitter voltage VCE (V) 0.03 0.1 0.3 1 Collector current IC (mA) NV — Rg 0 0.01 0.03 0.1 0.3 1 Collector current IC (mA) NV — Rg 160 300 VCE=10V GV=80dB Function=RIAA 120 100 80 IC=1mA 60 0.5mA 40 0.1mA Noise voltage NV (mV) VCE=10V GV=80dB Function=FLAT 140 Noise voltage NV (mV) NV — IC 160 Noise voltage NV (mV) 300 240 180 IC=1mA 120 0.5mA 60 0.1mA 20 0 0 1 3 10 30 100 Signal source resistance Rg (kΩ) 1 3 10 30 100 Signal source resistance Rg (kΩ) 3