Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1250 Unit: mm ● ● 0.7±0.1 ■ Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current ICP 6 A Collector current IC 3 A Collector power TC=25°C dissipation Ta=25°C 35 PC 4.2±0.2 7.5±0.2 16.7±0.3 (TC=25˚C) 2.7±0.2 φ3.1±0.1 4.0 ● Optimum for 25W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 5.5±0.2 1.4±0.1 Solder Dip ■ Features 4.2±0.2 10.0±0.2 0.8±0.1 1.3±0.2 +0.2 0.5 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection W 2 C B Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics 150 ˚C –55 to +150 ˚C (TC=25˚C) max Unit ICBO Symbol VCB = 100V, IE = 0 100 µA Parameter Collector cutoff current E Conditions min typ ICEO VCE = 80V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 30mA, IB = 0 80 hFE1 VCE = 5V, IC = 1A 2000 hFE2* VCE = 5V, IC = 2A 5000 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 2mA Base to emitter saturation voltage VBE(sat) IC = 2A, IB = 2mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *h FE2 IC = 2A, IB1 = 2mA, IB2 = –2mA, VCC = 50V V 30000 2.5 3.0 V V 20 MHz 3.5 µs 2.5 µs 0.6 µs Rank classification Rank hFE2 Q P 5000 to 15000 8000 to 30000 1 Power Transistors 2SD1890 PC — Ta IC — VCE 30 25 20 15 (2) 10 TC=25˚C 5 4 IB=3mA 0.5mA 0.4mA 3 0.3mA 2 0.2mA 1 (3) 5 100 0.1mA (4) 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 10 TC=100˚C 30000 3000 25˚C 1 0.3 1 3 TC=100˚C 1000 –25˚C 0.3 10 30 300 25˚C 100 –25˚C 30 10 0.01 0.03 100 Collector current IC (A) 3 10 tstg 1 tf 0.3 0.1 10 I CP 3 t=1ms IC 10ms 1 DC 0.3 0.1 0.03 0.03 0.01 0.01 0 2 4 0.3 0.3 1 6 Collector current IC (A) 8 3 10 30 100 Collector current IC (A) 1 3 IE=0 f=1MHz TC=25˚C 300 100 30 10 3 10 30 100 300 1 3 10 30 100 Collector to base voltage VCB (V) Non repetitive pulse TC=25˚C 30 ton 3 1 Area of safe operation (ASO) Collector current IC (A) 10 0.3 100 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (IB1=–IB2) VCC=50V TC=25˚C 30 100˚C 25˚C 1 0.1 Collector current IC (A) ton, tstg, tf — IC 100 TC=–25˚C 1 Cob — VCB 10000 0.1 0.1 3 1000 VCE=5V 30 3 10 hFE — IC IC/IB=1000 10 30 0.1 0.1 12 100000 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 8 IC/IB=1000 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 6 Collector output capacitance Cob (pF) 0 Switching time ton,tstg,tf (µs) Base to emitter saturation voltage VBE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) (1) 35 0 2 VBE(sat) — IC 6 Collector current IC (A) Collector power dissipation PC (W) 40 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD1890 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3