Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type Darlington Unit: mm ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SD1276 base voltage 2SD1276A Collector to 2SD1276 emitter voltage 2SD1276A Ratings 60 VCBO V 80 VEBO 5 V ICP 8 A Collector current IC 4 A Ta=25°C 40 PC Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C current 2SD1276A Collector cutoff 2SD1276 current 2SD1276A Emitter cutoff current Collector to emitter 2SD1276 voltage 2SD1276A Forward current transfer ratio 4.2±0.2 7.5±0.2 5.08±0.5 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C B Conditions min typ max VCB = 60V, IE = 0 200 VCB = 80V, IE = 0 200 VCE = 30V, IB = 0 500 VCE = 40V, IB = 0 500 IEBO VEB = 5V, IC = 0 2 VCEO IC = 30mA, IB = 0 hFE1 VCE = 3V, IC = 0.5A 1000 hFE2* VCE = 3V, IC = 3A 2000 ICBO ICEO 60 2 4 VBE VCE = 3V, IC = 3A Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V µA µA mA 10000 IC = 5A, IB = 20mA Base to emitter voltage Unit V 80 IC = 3A, IB = 12mA VCE(sat) FE2 0.5 +0.2 –0.1 1 Collector to emitter saturation voltage *h 1.3±0.2 E Symbol 2SD1276 0.8±0.1 (TC=25˚C) Parameter Collector cutoff 1.4±0.1 W 2 ■ Electrical Characteristics φ3.1±0.1 V 80 Peak collector current dissipation 2.7±0.2 2.54±0.25 60 VCEO Unit Emitter to base voltage Collector power TC=25°C 16.7±0.3 (TC=25˚C) 5.5±0.2 4.0 ● High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 Solder Dip ■ Features ● 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SB950 and 2SB950A 2.5 V V 20 MHz 0.5 µs 4 µs 1 µs Rank classification Rank hFE2 Q P 2000 to 5000 4000 to 10000 1 Power Transistors 2SD1276, 2SD1276A PC — Ta IC — VCE (1) 40 30 20 (2) 10 10 TC=25˚C IB=4.0mA 8 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 6 1.0mA 0.5mA 4 2 25˚C 6 TC=100˚C –25˚C 4 2 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 1 TC=100˚C –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 TC=100˚C 104 1000 25˚C –25˚C 103 102 0.1 0.3 1 3 Area of safe operation (ASO) t=1ms 3 IC 10ms 1 DC 0.3 0.03 0.01 1 3 10 30 2SD1276A 2SD1276 0.1 100 300 Collector to emitter voltage VCE 1000 (V) 30 10 3 0.3 1 3 10 30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10 ICP 100 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 100 Collector to base voltage VCB (V) 103 Non repetitive pulse TC=25˚C 300 1 0.1 10 Collector current IC (A) 100 30 3.2 IE=0 f=1MHz TC=25˚C 3000 10 0.01 0.03 10 Collector output capacitance Cob (pF) Forward current transfer ratio hFE 25˚C 2.4 Cob — VCB VCE=3V 10 1.6 10000 IC/IB=250 30 3 0.8 Base to emitter voltage VBE (V) 105 100 Collector current IC (A) Collector current IC (A) 8 (3) (4) 0 2 VCE=3V Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 10 Collector current IC (A) Collector power dissipation PC (W) 50 1 Time t (s) 10 102 103 104