Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington ● ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SB950 base voltage 2SB950A Collector to 2SB950 emitter voltage 2SB950A Ratings Unit –60 VCBO –5 V Peak collector current ICP –8 A Collector current IC –4 A Ta=25°C 40 PC Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C 2SB950A Collector cutoff 2SB950 current 2SB950A ICBO ICEO IEBO Emitter cutoff current Collector to emitter 2SB950 voltage 2SB950A Forward current transfer ratio 4.2±0.2 7.5±0.2 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C B Conditions min –200 –200 VCE = –30V, IB = 0 –500 VCE = –40V, IB = 0 –500 VEB = –5V, IC = 0 –2 –60 hFE1 VCE = –3V, IC = – 0.5A 1000 VCE = –3V, IC = –3A 2000 VBE max VCB = –80V, IE = 0 IC = –30mA, IB = 0 * typ VCB = –60V, IE = 0 VCEO hFE2 Base to emitter voltage 5.08±0.5 1 E Symbol 2SB950 +0.2 (TC=25˚C) Parameter current 1.3±0.2 0.5 –0.1 W 2 ■ Electrical Characteristics Collector cutoff 0.8±0.1 V –80 VEBO dissipation 1.4±0.1 2.54±0.25 –60 VCEO φ3.1±0.1 V –80 Emitter to base voltage Collector power TC=25°C 16.7±0.3 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 2.7±0.2 4.0 ● 14.0±0.5 ● 5.5±0.2 Solder Dip ■ Features Unit: mm 4.2±0.2 10.0±0.2 0.7±0.1 For power amplification and switching Complementary to 2SD1276 and 2SD1276A Unit µA µA mA V –80 10000 VCE = –3V, IC = –3A –2.5 V VCE(sat)1 IC = –3A, IB = –12mA –2 V VCE(sat)2 IC = –5A, IB = –20mA –4 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Collector to emitter saturation voltage *h FE2 IC = –3A, IB1 = –12mA, IB2 = 12mA, VCC = –50V 20 MHz 0.3 µs 2 µs 0.5 µs Rank classification Rank hFE2 Q P 2000 to 5000 4000 to 10000 1 Power Transistors 2SB950, 2SB950A PC — Ta IC — VCE IC — VBE –6 40 30 (1) 20 10 TC=25˚C –5 VCE=–3V IB=–3.0mA –2.5mA –2.0mA –1.5mA –1.0mA –4 – 0.5mA –3 – 0.4mA – 0.3mA –2 – 0.2mA –8 25˚C –6 TC=100˚C –25˚C –4 –2 –1 (2) (3) –10 Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) Collector current IC (A) Collector power dissipation PC (W) 50 (4) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –3 –4 VCE(sat) — IC 25˚C –1 –25˚C – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 105 1000 TC=100˚C 25˚C 104 –25˚C 103 102 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Area of safe operation (ASO) –10 ICP –3 IC t=1ms 10ms –1 DC – 0.3 – 0.03 –3 –10 –30 2SB950A 2SB950 – 0.1 –100 –300 –1000 Collector to emitter voltage VCE (V) 30 10 3 –1 –3 –10 –30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 100 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 –100 Collector to base voltage VCB (V) 103 –30 300 1 – 0.1 – 0.3 –10 Collector current IC (A) –100 –3.2 IE=0 f=1MHz TC=25˚C 3000 Collector current IC (A) Collector current IC (A) Collector output capacitance Cob (pF) Forward current transfer ratio hFE TC=100˚C –2.4 Cob — VCB VCE=–3V –10 –1.6 10000 IC/IB=250 –3 – 0.8 Base to emitter voltage VBE (V) hFE — IC – 0.3 2 0 106 –30 – 0.01 –1 –5 Collector to emitter voltage VCE (V) –100 Collector to emitter saturation voltage VCE(sat) (V) –1 1 Time t (s) 10 102 103 104