High Voltage Fast Switching Transistor Features • Fast Speed Switching • Wide Safe Operating Area TO-3PF 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 6 A ICP * Collector Current (Pulse) 20 A PC Collector Dissipation (TC = 25°C) 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity KSC5030F KSC5030FRTU TO3PF - - 50 ©2005 Fairchild Semiconductor Corporation KSC5030F Rev. A 1 www.fairchildsemi.com KSC5030F High Voltage Fast Switching Transistor KSC5030F Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 3A, IB1 = - IB2 = 0.6A L=1mH, Clamped 800 V ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.6A VCE = 5V, IC = 2.0A VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1.5 V VCB = 10V, IE = 0, f = 1MHz COB Output Capacitance tON Turn On Time tSTG Storage Time tF Fall Time 10 8 40 120 VCC=400V, IC=4A IB1=0.8A, IB2=-1.6A RL=100Ω pF 0.5 µs 3.0 µs 0.3 µs hFE Classification KSC5030F Rev. A Classification R O Y hFE1 10 ~ 20 15 ~ 30 20 ~ 40 2 www.fairchildsemi.com KSC5030F High Voltage Fast Switching Transistor Electrical Characteristics Figure 1. Static Characterstic Figure 2. DC Current Gain 1000 10 VCE = 5V IC[A], COLLECTOR CURRENT 9 hFE, DC CURRENT GAIN 8 7 6 IB = 800mA IB = 700mA IB = 600mA IB = 500mA IB = 400mA IB = 300mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA IB = 20mA I = 0 B 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 100 10 1 0.01 10 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 IC = 5 IB VCE = 5V 9 IC[A], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 4. Base-Emitter On Voltage 10 0.1 VBE(sat) VCE(sat) 8 7 6 5 4 3 2 1 0.01 0.01 0.1 1 0 0.0 10 0.1 0.2 Figure 5. Switching Time 0.5 0.6 0.7 0.8 0.9 1.0 100 tSTG tF 0.1 1 10 DC 1 0.1 0.01 10 IC(max) s 0µ 10 tON s 1m IC[A], COLLECTOR CURRENT IC(max).(Pulse) ms 10 1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT KSC5030F Rev. A 0.4 Figure 6. Forward Biased Safe Operating Area 10 0.01 0.1 0.3 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT tON, tSTG, tF [µs], TIME 10 IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage 1 1 3 www.fairchildsemi.com KSC5030F High Voltage Fast Switching Transistor Typical Performance Characteristics Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating Curve 80 100 70 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT L=200uH IB2 = -0.6A 10 1 0.1 60 50 40 30 20 10 0.01 10 100 1000 0 10000 25 50 75 100 125 150 175 o VCE[V], COLLECTOR-EMITTER VOLTAGE KSC5030F Rev. A 0 TC[ C], CASE TEMPERATURE 4 www.fairchildsemi.com KSC5030F High Voltage Fast Switching Transistor Typical Performance Characteristics (Continued) KSC5030F High Voltage Fast Switching Transistor Mechanical Dimensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 2.00 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 0.85 ±0.03 2.50 ±0.20 14.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters KSC5030F Rev. A 5 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 6 KSC5030F Rev. A www.fairchildsemi.com KSC5030F High Voltage Fast Switching Transistor TRADEMARKS