High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A IB Base Current 4 A PC Collector Dissipation (TC = 25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C ©2005 Fairchild Semiconductor Corporation FJP13007 Rev. D 1 www.fairchildsemi.com FJP13007 High Voltage Fast-Switching NPN Power Transistor FJP13007 Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 1 mA BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 IEBO Emitter Cut-off Current VEB = 9V, IC = 0 400 V hFE1 hFE2 DC Current Gain * VCE = 5V, IC = 2A VCE = 5V, IC = 5A VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A 1.0 2.0 3.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A 1.2 1.6 V V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A Cob Output Capacitance VCB = 10V, f = 0.1MHz tON Turn On Time tSTG Storge Time tF Fall Time VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 25Ω 8 5 60 30 4 MHz 110 pF 1.6 µs 3.0 µs 0.7 µs * Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2% hFE Classification Classification H1 H2 hFE1 15 ~ 28 26 ~ 39 2 FJP13007 Rev. D www.fairchildsemi.com FJP13007 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Figure 2. Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. DC Current Gain 100 hFE, DC CURRENT GAIN VCE = 5V 10 1 0.1 1 10 10 I C = 3 IB 1 VBE(sat) VCE(sat) 0.1 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance 1000 tR, tD [ns], TURN ON TIME Cob[pF], OUTPUT CAPACITANCE 100 Figure 4. Turn On Time 1000 100 10 tR 100 tD, VBE(off)=5V VCC=125V IC=5IB 1 0.1 1 10 100 10 0.1 1000 1 VCB[V], COLLECTOR-BASE VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time Figure 6. Forward Biased Safe Operating Area 100 10000 VCC=125V IC=5IB tSTG IC[A], COLLECTOR CURRENT tSTG, tF [ns], TURN OFF TIME 10 IC[A], COLLECTOR CURRENT 1000 100 10 0.1 tF 1 1ms DC 100µs 1 0.1 0.01 10 1 IC[A], COLLECTOR CURRENT 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE 3 FJP13007 Rev. D 10µs 10 www.fairchildsemi.com FJP13007 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating 100 Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 90 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 100 10 1 0.1 80 70 60 50 40 30 20 10 0 0.01 10 100 1000 0 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE 4 FJP13007 Rev. D 25 www.fairchildsemi.com FJP13007 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics FJP13007 High Voltage Fast-Switching NPN Power Transistor Mechanical Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters 5 FJP13007 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 6 FJP13007 Rev. D www.fairchildsemi.com FJP13007 High Voltage Fast-Switching NPN Power Transistor TRADEMARKS