FAIRCHILD FJP13007TU

High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
1
1.Base
Absolute Maximum Ratings
Symbol
TO-220
2.Collector
3.Emitter
TC = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
8
A
ICP
Collector Current (Pulse)
16
A
IB
Base Current
4
A
PC
Collector Dissipation (TC = 25°C)
80
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
©2005 Fairchild Semiconductor Corporation
FJP13007 Rev. D
1
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FJP13007 High Voltage Fast-Switching NPN Power Transistor
FJP13007
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max
Units
1
mA
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA, IB = 0
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
400
V
hFE1
hFE2
DC Current Gain *
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
1.0
2.0
3.0
V
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
1.2
1.6
V
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
Cob
Output Capacitance
VCB = 10V, f = 0.1MHz
tON
Turn On Time
tSTG
Storge Time
tF
Fall Time
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A
RL = 25Ω
8
5
60
30
4
MHz
110
pF
1.6
µs
3.0
µs
0.7
µs
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
hFE Classification
Classification
H1
H2
hFE1
15 ~ 28
26 ~ 39
2
FJP13007 Rev. D
www.fairchildsemi.com
FJP13007 High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
Figure 2. Saturation Voltage
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. DC Current Gain
100
hFE, DC CURRENT GAIN
VCE = 5V
10
1
0.1
1
10
10
I C = 3 IB
1
VBE(sat)
VCE(sat)
0.1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
1000
tR, tD [ns], TURN ON TIME
Cob[pF], OUTPUT CAPACITANCE
100
Figure 4. Turn On Time
1000
100
10
tR
100
tD, VBE(off)=5V
VCC=125V
IC=5IB
1
0.1
1
10
100
10
0.1
1000
1
VCB[V], COLLECTOR-BASE VOLTAGE
10
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
Figure 6. Forward Biased Safe Operating Area
100
10000
VCC=125V
IC=5IB
tSTG
IC[A], COLLECTOR CURRENT
tSTG, tF [ns], TURN OFF TIME
10
IC[A], COLLECTOR CURRENT
1000
100
10
0.1
tF
1
1ms
DC
100µs
1
0.1
0.01
10
1
IC[A], COLLECTOR CURRENT
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
3
FJP13007 Rev. D
10µs
10
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FJP13007 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
(Continued)
Figure 7. Reverse Biased Safe Operating Area
Figure 8. Power Derating
100
Vcc=50V,
IB1=1A, IB2 = -1A
L = 1mH
90
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
100
10
1
0.1
80
70
60
50
40
30
20
10
0
0.01
10
100
1000
0
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
4
FJP13007 Rev. D
25
www.fairchildsemi.com
FJP13007 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
FJP13007 High Voltage Fast-Switching NPN Power Transistor
Mechanical Dimensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
5
FJP13007 Rev. D
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
6
FJP13007 Rev. D
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FJP13007 High Voltage Fast-Switching NPN Power Transistor
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