FJP5554 High Voltage Fast Switching Transistor FJP5554 High Voltage Fast Switching Transistor Features • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application 1 1.Base TO-220 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 1050 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 15 V IC Collector Current (DC) 4 A ICP * Collector Current (Pulse) 8 A PC Collector Dissipation (TC = 25°C) 70 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width J5554 J5554 FJP5554TU TO-220 - - 50 FJP5554 TO-220 - - 200 ©2005 Fairchild Semiconductor Corporation FJP5554 Rev. A 1 Quantity www.fairchildsemi.com Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. BVCBO Collector-Base Breakdown Voltage IC = 500µA, IE = 0 1050 Typ. Max Units V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 15 ICBO Collector Cut-off Current ICEO Collector Cut-off Current IEBO Emitter Cut-off Current VEB = 15V, IC = 0 hFE DC Current Gain VCE = 5V, IC = 0.1A VCE = 3V, IC = 0.8A VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 0.5 V IC = 3.5A, IB = 1.0A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 3.5A, IB = 1.0A 1.5 V tON Turn On Time µs Storage Time 1.2 µs tF Fall Time VCC=125V, IC=0.5A IB1=45mA, IB2=0.5A RL=250Ω 1.0 tSTG 0.3 µs FJP5554 Rev. A V 23 V VCB = 1050V, IE = 0 1 mA VCB = 400V, IB = 0 250 µA 1 mA 2 45 20 100 50 www.fairchildsemi.com FJP5554 High Voltage Fast Switching Transistor Electrical Characteristics Figure 1. Static Characterstic Figure 2. DC Current Gain o 3.0 2.5 IB=150mA IB=100mA 2.0 IB=50mA 1.5 VCE=3V o IB=350mA 3.5 hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 4.0 1.0 TC= 125 C TC= 75 C 100 o TC= - 25 C o TC= 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. DC Current Gain hFE, DC CURRENT GAIN 10 VCE(SAT) [V], SATURATION VOLTAGE TC= 75 C o TC= 125 C 100 o TC= - 25 C o TC= 25 C 10 1 0.01 0.1 1 IC=3.5 IB o TC= 75 C 1 o TC= 125 C o TC= 25 C o TC= - 25 C 0.1 0.01 0.1 10 IC [A], COLLECTOR CURRENT 1000 COB [pF], OUTPUT CAPACITANCE VBE(sat) [V], SATURATION VOLTAGE IC=3.5 IB o TC= 25 C o TC= - 25 C o TC= 125 C o TC= 75 C 1 f = 1MHz, IE=0 100 10 0.1 10 IC [A], COLLECTOR CURRENT FJP5554 Rev. A 10 Figure 6. Output Capacitance 10 0.1 0.1 1 IC [A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage 1 10 Figure 4. Collector-Emitter Saturation Voltage VCE=5V o 1 IC [A], COLLECTOR CURRENT 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE 3 www.fairchildsemi.com FJP5554 High Voltage Fast Switching Transistor Typical Performance Characteristics Figure 7. Reverse Biased Safe Operating Area Figure 8. Forward Biased Safe Operating Area 10 100 Single Pulse o TC=25 C IC [A], COLLECTOR-CURRENT IC [A], COLLECTOR CURRENT 9 8 7 6 5 4 VBE(off)=-5V 3 RBE(off)=1 ohm 2 L=1mH 1 VCC=50V, IB1=1.2A 0 200 400 600 800 1000 10 100ms VCE [V], COLLECTOR-EMITTER VOLTAGE 10ms 1ms DC 1 0.1 0.01 10 1200 Pulse 1000 100 VCE [V], COLLECTOR-EMITTER VOLTAGE PC [W], COLLECTOR POWER DISSIPATION Figure 9. Power Derating Curve 100 80 60 40 20 0 0 25 50 75 100 125 150 o TC [ C], CASE TEMPERATURE FJP5554 Rev. A 4 www.fairchildsemi.com FJP5554 High Voltage Fast Switching Transistor Typical Performance Characteristics (Continued) FJP5554 High Voltage Fast Switching Transistor Mechanical Dimensions TO-220 Dimensions in Millimeters FJP5554 Rev. A 5 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16