DIODES MURB1610CT

MURB1610CT / MURB1620CT
16A SURFACE MOUNT SUPER-FAST RECTIFIER
Features
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Glass Passivated Die Construction
Diffused Junction
Super-Fast Recovery Times for High Efficiency
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 100A Peak
Low Reverse Leakage Current
Plastic Material: UL Flammability
Classification Rating 94V-0
E
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G
Dim
Min
Max
4
H
A
9.65
10.69
B
14.60
15.88
C
0.51
1.14
D
2.29
2.79
4.83
1
2
3
J
B
M
Mechanical Data
D
Case: Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Mounting Position: Any
D2PAK
A
K
C
PIN 1
L
PIN 2 & 4
PIN 3
E
4.37
G
1.14
1.40
H
1.14
1.40
J
8.25
9.25
K
0.30
0.64
L
2.03
2.92
M
2.29
2.79
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
MURB1610CT
MURB1620CT
Unit
VRRM
VRWM
VR
100
200
V
VR(RMS)
70
140
V
IO
16
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
100
A
Forward Voltage
VFM
0.975
V
IRM
5.0
250
mA
trr
25
ns
Average Rectified Output Current
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 125°C
@ IF = 8.0A
@TA = 25°C
@ TA = 150°C
Maximum Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance Junction to Case
Operating and Storage Temperature Range
Notes:
Cj
85
pF
RqJC
1.5
°C/W
Tj, TSTG
-65 to +150
°C
1. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
2. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A.
3. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
DS14005 Rev. A1-2
1 of 2
MURB1610CT/MURB1620CT
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
20
16
12
8
4
0
Resistive or
inductive load
100
125
150
100
10
1.0
0.1
175
0.2
0.6
1.0
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics per Element
400
8.3ms single half-sine-wave
JEDEC method
Tj = 25°C
125
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
150
Tj = 25°C
Pulse width = 300µs
2% duty cycle
100
75
50
100
25
0
10
1
10
0.1
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (mA)
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance per Element
100
TC = 100°C
10
TC = 75°C
1.0
0.1
TC = 25°C
0.01
0
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS14005 Rev. A1-2
2 of 2
MURB1610CT/MURB1620CT