FZT790A TYPICAL CHARACTERISTICS 1.6 - (Volts) 1.2 V 1.4 0.4 IC/IB=100 IC/IB=40 IC/IB=10 1.8 Tamb=25°C 1.0 0.8 1.4 1.2 V 0.01 0.1 1 1.0 0.4 0.01 IC - Collector Current (Amps) VCE=2V 0.8 0.6 250 0.4 0.2 - (Volts) 500 1.4 10 IC/IB=100 0.01 1.6 - (Volts) 1.2 V 1.4 0.6 0.1 10 1 -40 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -3 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C 0.4 Collector Cut-Off Current 0 0.01 0.1 1 VBE(sat) v IC 10 10 VCE=2V SYMBOL MIN. TYP. 0.1 0.4 0.2 0.01 0.1 10 DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) VBE(on) v IC Safe Operating Area 3 - 249 100 MAX. UNIT CONDITIONS. V(BR)CBO -50 -70 V V(BR)CEO -40 -60 V IC=-10mA* V(BR)EBO -5 -8.5 V IE=-100µ A -0.1 -10 µA µA VCB=-30V VCB=-30V, Tamb=100°C ICBO IC=-100µ A Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.15 -0.30 -0.40 -0.25 -0.45 -0.75 V V V IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.8 -1.0 V IC=-1A, IB=-10mA* -0.75 Base-EmitterTurn-OnVoltage VBE(on) 0.8 1 VCEO Breakdown Voltages hFE v IC 0.1 V Collector-Emitter Voltage 0.8 IC - Collector Current (Amps) 0.01 UNIT -50 PARAMETER 1 0 VALUE VCBO 1.0 1.0 0 SYMBOL Collector-Base Voltage 1.2 IC - Collector Current (Amps) -55°C +25°C +100°C B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.2 0 E C PARAMETER 0.6 V - Typical Gain 750 1.0 -55°C +25°C +100°C +175°C 1.6 h - Normalised Gain h 1 VCE(sat) v IC +100°C +25°C -55°C 1.4 1.2 0.1 IC - Collector Current (Amps) VCE(sat) v IC 1.6 C ABSOLUTE MAXIMUM RATINGS. 0.8 0.2 0 10 FZT790A ISSUE 3 - OCTOBER 1995 FEATURES * Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A * Gain of 200 at IC=1 Amp and very low saturation voltage APPLICATIONS * DC-DC converters, Siren drivers. COMPLEMENTARY TYPE FZT690B PARTMARKING DETAIL FZT790A IC/IB=100 0.6 0.6 0.2 0 -55°C +25°C +100°C +175°C 1.6 - (Volts) 1.8 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR V 800 IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 250 200 150 Transition Frequency fT 100 Output Capacitance Cobo 24 pF VCB=-10V,f=1MHz Switching Times ton toff 35 600 ns ns IC=-500mA, IB1=-50mA, IB2=-50mA, VCC=-10V MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 248 IC=-50mA, VCE=-5V f=50MHz FZT790A TYPICAL CHARACTERISTICS 1.6 - (Volts) 1.2 V 1.4 0.4 IC/IB=100 IC/IB=40 IC/IB=10 1.8 Tamb=25°C 1.0 0.8 1.4 1.2 V 0.01 0.1 1 1.0 0.4 0.01 IC - Collector Current (Amps) VCE=2V 0.8 0.6 250 0.4 0.2 - (Volts) 500 1.4 10 IC/IB=100 0.01 1.6 - (Volts) 1.2 V 1.4 0.6 0.1 10 1 -40 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -3 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C 0.4 Collector Cut-Off Current 0 0.01 0.1 1 VBE(sat) v IC 10 10 VCE=2V SYMBOL MIN. TYP. 0.1 0.4 0.2 0.01 0.1 10 DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) VBE(on) v IC Safe Operating Area 3 - 249 100 MAX. UNIT CONDITIONS. V(BR)CBO -50 -70 V V(BR)CEO -40 -60 V IC=-10mA* V(BR)EBO -5 -8.5 V IE=-100µ A -0.1 -10 µA µA VCB=-30V VCB=-30V, Tamb=100°C ICBO IC=-100µ A Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.15 -0.30 -0.40 -0.25 -0.45 -0.75 V V V IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.8 -1.0 V IC=-1A, IB=-10mA* -0.75 Base-EmitterTurn-OnVoltage VBE(on) 0.8 1 VCEO Breakdown Voltages hFE v IC 0.1 V Collector-Emitter Voltage 0.8 IC - Collector Current (Amps) 0.01 UNIT -50 PARAMETER 1 0 VALUE VCBO 1.0 1.0 0 SYMBOL Collector-Base Voltage 1.2 IC - Collector Current (Amps) -55°C +25°C +100°C B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.2 0 E C PARAMETER 0.6 V - Typical Gain 750 1.0 -55°C +25°C +100°C +175°C 1.6 h - Normalised Gain h 1 VCE(sat) v IC +100°C +25°C -55°C 1.4 1.2 0.1 IC - Collector Current (Amps) VCE(sat) v IC 1.6 C ABSOLUTE MAXIMUM RATINGS. 0.8 0.2 0 10 FZT790A ISSUE 3 - OCTOBER 1995 FEATURES * Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A * Gain of 200 at IC=1 Amp and very low saturation voltage APPLICATIONS * DC-DC converters, Siren drivers. COMPLEMENTARY TYPE FZT690B PARTMARKING DETAIL FZT790A IC/IB=100 0.6 0.6 0.2 0 -55°C +25°C +100°C +175°C 1.6 - (Volts) 1.8 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR V 800 IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 250 200 150 Transition Frequency fT 100 Output Capacitance Cobo 24 pF VCB=-10V,f=1MHz Switching Times ton toff 35 600 ns ns IC=-500mA, IB1=-50mA, IB2=-50mA, VCC=-10V MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 248 IC=-50mA, VCE=-5V f=50MHz