SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT658 TYPICAL CHARACTERISTICS 1.4 IC/IB=10 IC/IB=20 IC/IB=50 Tamb=25°C 1.4 1.2 1.0 0.6 0.2 COMPLEMENTARY TYPE PARTMARKING DETAIL - 1.2 1.0 10 0 20 VCE=10V 0.001 0.01 0.1 1 IC - Collector Current (Amps) 200 0.8 0.6 1.6 - (Volts) 1.2 V 1.4 0.6 0.1 20 0.6 0 0.001 0.01 0.1 1 hFE v IC VBE(sat) v IC 10 20 1 VCE=10V 0.1 1.0 0.8 DC 1s 100ms 10ms 1ms 100µs 0.01 0.4 0 0.001 0.001 0.01 0.1 1 SYMBOL 10 20 IC - Collector Current (Amps) 1 10 100 VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area UNIT V Collector-Base Voltage VCBO 400 VCEO 400 V Emitter-Base Voltage VEBO 5 V 1 A Peak Pulse Current ICM Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 0.5 A 2 W -55 to +150 °C PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltage V(BR)CBO 400 1000 MAX. V IC=100µA V(BR)CEO 400 V IC=10mA* V(BR)EBO 5 V IE=100µA VCB=320V Collector Cut-Off Current ICBO 100 nA Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.25 0.5 V V V IC=20mA, IB=1mA* IC=50mA, IB=5mA* IC=100mA, IB=10mA Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=100mA, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=100mA, VCE=5V* Static Forward Current Transfer Ratio hFE 50 50 40 Transition Frequency fT 50 Output Capacitance Cobo Switching Times ton toff IC=1mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=10V* MHz 10 130 3300 3 - 215 IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz ns IC=100mA, VCC=100V IB1=10mA, IB2=-20mA ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 216 VALUE Collector-Emitter Voltage 0.2 IC - Collector Current (Amps) 0.2 PARAMETER 0.4 IC - Collector Current (Amps) -55°C +25°C +100°C +175°C B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 0.8 10 20 1 IC/IB=10 1.0 V 100 0.4 0.01 10 1.2 - (Volts) 1.0 0.2 0 0.001 1.4 - Typical gain 1.2 -55°C +25°C +100°C +175°C 1.6 300 h - Normalised Gain h 1.4 FZT758 FZT658 ABSOLUTE MAXIMUM RATINGS. 0.4 VCE(sat) v IC +100°C +25°C -55°C C 0.8 VCE(sat) v IC 1.6 E 0.2 0.01 0.1 1 IC - Collector Current (Amps) C IC/IB=10 0.6 0.4 V V 0.8 0 0.001 -55°C +25°C +100°C +175°C 1.6 - (Volts) - (Volts) 1.6 FZT658 ISSUE 4 - OCTOBER 1995 FEATURES * 400 Volt VCEO * Low saturation voltage SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT658 TYPICAL CHARACTERISTICS 1.4 IC/IB=10 IC/IB=20 IC/IB=50 Tamb=25°C 1.4 1.2 1.0 0.6 0.2 COMPLEMENTARY TYPE PARTMARKING DETAIL - 1.2 1.0 10 0 20 VCE=10V 0.001 0.01 0.1 1 IC - Collector Current (Amps) 200 0.8 0.6 1.6 - (Volts) 1.2 V 1.4 0.6 0.1 20 0.6 0 0.001 0.01 0.1 1 hFE v IC VBE(sat) v IC 10 20 1 VCE=10V 0.1 1.0 0.8 DC 1s 100ms 10ms 1ms 100µs 0.01 0.4 0 0.001 0.001 0.01 0.1 1 SYMBOL 10 20 IC - Collector Current (Amps) 1 10 100 VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area UNIT V Collector-Base Voltage VCBO 400 VCEO 400 V Emitter-Base Voltage VEBO 5 V 1 A Peak Pulse Current ICM Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 0.5 A 2 W -55 to +150 °C PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltage V(BR)CBO 400 1000 MAX. V IC=100µA V(BR)CEO 400 V IC=10mA* V(BR)EBO 5 V IE=100µA VCB=320V Collector Cut-Off Current ICBO 100 nA Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.25 0.5 V V V IC=20mA, IB=1mA* IC=50mA, IB=5mA* IC=100mA, IB=10mA Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=100mA, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=100mA, VCE=5V* Static Forward Current Transfer Ratio hFE 50 50 40 Transition Frequency fT 50 Output Capacitance Cobo Switching Times ton toff IC=1mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=10V* MHz 10 130 3300 3 - 215 IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz ns IC=100mA, VCC=100V IB1=10mA, IB2=-20mA ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 216 VALUE Collector-Emitter Voltage 0.2 IC - Collector Current (Amps) 0.2 PARAMETER 0.4 IC - Collector Current (Amps) -55°C +25°C +100°C +175°C B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 0.8 10 20 1 IC/IB=10 1.0 V 100 0.4 0.01 10 1.2 - (Volts) 1.0 0.2 0 0.001 1.4 - Typical gain 1.2 -55°C +25°C +100°C +175°C 1.6 300 h - Normalised Gain h 1.4 FZT758 FZT658 ABSOLUTE MAXIMUM RATINGS. 0.4 VCE(sat) v IC +100°C +25°C -55°C C 0.8 VCE(sat) v IC 1.6 E 0.2 0.01 0.1 1 IC - Collector Current (Amps) C IC/IB=10 0.6 0.4 V V 0.8 0 0.001 -55°C +25°C +100°C +175°C 1.6 - (Volts) - (Volts) 1.6 FZT658 ISSUE 4 - OCTOBER 1995 FEATURES * 400 Volt VCEO * Low saturation voltage