SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491A FMMT491A ISSUE 3 OCTOBER 1995 FEATURES * Very Low Equivalent Resistance, RCE(sat) 195mΩ at 1A TYPICAL CHARACTERISTICS 0.5 0.5 +25°C 0.4 -55° C +25° C +100° C 0.3 IC/IB=10 IC/IB=50 IC/IB=100 0.2 0.1 1mA 10mA 100mA 1A 0 1mA 10A 10mA IC-Collector Current V CE(sat) 1000 800 600 vI V CE(sat) 1.4 VCE=5V 1.2 +100°C 1.0 +25°C 0.8 -55° C vI C IC/IB=10 -55° C +25°C +100°C 10mA 100mA 1A 10A 0 1mA IC-Collector Current FE 10mA 100mA 1A 10A IC-Collector Current h vI V C BE(sat) vI C 10 VCE=5V 1 0.8 -55°C 0.1 +25°C +100°C 0.01 0.2 0 1mA 10mA 100mA 1A 10A IC-Collector Current V BE(on) vI 0.001 0.1V PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Peak Pulse Current ICM 2 A 500 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.2 0 1mA 0.4 10A 0.4 200 0.6 1A 0.6 400 1.0 100mA IC-Collector Current C DC 1s 100ms 10ms 1ms 100us 1V 10V VCE - Collector Emitter Voltage (V) 100V PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 40 V IC=100µA Collector-Emitter Breakdown Voltage VCEO(sus) 40 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Cut-Off Currents ICBO ,ICES 100 nA VCB=30V,VCES=30V Emitter Cut-Off Current IEBO 100 nA VEB=4V Saturation Voltages VCE(sat) 0.3 0.5 V V IC=500mA, IB=50mA* IC=1A, IB=100mA* MAX. VBE(sat) 1.1 V IC=1A, IB=100mA* Base Emitter Turn On Voltage VBE(on) 1.0 V IC=1A, VCE=5V* Static Forward Current Transfer Ratio hFE 300 300 200 35 Transition Frequency fT 150 Collector-Base Breakdown Voltage Cobo Safe Operating Area C B FMMT591A 41A ABSOLUTE MAXIMUM RATINGS. 0.2 0.1 0 COMPLEMENTARY TYPE PARTMARKING DETAIL IC/IB=10 0.4 0.3 IC=1mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 900 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 118 E C 3 - 117 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491A FMMT491A ISSUE 3 OCTOBER 1995 FEATURES * Very Low Equivalent Resistance, RCE(sat) 195mΩ at 1A TYPICAL CHARACTERISTICS 0.5 0.5 +25°C 0.4 -55° C +25° C +100° C 0.3 IC/IB=10 IC/IB=50 IC/IB=100 0.2 0.1 1mA 10mA 100mA 1A 0 1mA 10A 10mA IC-Collector Current V CE(sat) 1000 800 600 vI V CE(sat) 1.4 VCE=5V 1.2 +100°C 1.0 +25°C 0.8 -55° C vI C IC/IB=10 -55° C +25°C +100°C 10mA 100mA 1A 10A 0 1mA IC-Collector Current FE 10mA 100mA 1A 10A IC-Collector Current h vI V C BE(sat) vI C 10 VCE=5V 1 0.8 -55°C 0.1 +25°C +100°C 0.01 0.2 0 1mA 10mA 100mA 1A 10A IC-Collector Current V BE(on) vI 0.001 0.1V PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Peak Pulse Current ICM 2 A 500 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.2 0 1mA 0.4 10A 0.4 200 0.6 1A 0.6 400 1.0 100mA IC-Collector Current C DC 1s 100ms 10ms 1ms 100us 1V 10V VCE - Collector Emitter Voltage (V) 100V PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 40 V IC=100µA Collector-Emitter Breakdown Voltage VCEO(sus) 40 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Cut-Off Currents ICBO ,ICES 100 nA VCB=30V,VCES=30V Emitter Cut-Off Current IEBO 100 nA VEB=4V Saturation Voltages VCE(sat) 0.3 0.5 V V IC=500mA, IB=50mA* IC=1A, IB=100mA* MAX. VBE(sat) 1.1 V IC=1A, IB=100mA* Base Emitter Turn On Voltage VBE(on) 1.0 V IC=1A, VCE=5V* Static Forward Current Transfer Ratio hFE 300 300 200 35 Transition Frequency fT 150 Collector-Base Breakdown Voltage Cobo Safe Operating Area C B FMMT591A 41A ABSOLUTE MAXIMUM RATINGS. 0.2 0.1 0 COMPLEMENTARY TYPE PARTMARKING DETAIL IC/IB=10 0.4 0.3 IC=1mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 900 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 118 E C 3 - 117