DIODES FMMT558

SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FMMT558
ISSUE 3 – JANUARY 1996
FEATURES
* Excellent hFE characteristics at IC=100mA
* Low saturation voltages
COMPLEMENTARY TYPE – FMMT458
PARTMARKING DETAIL –
558
TYPICAL CHARACTERISTICS
1.4
1.0
0.6
V
0.6
0.2
0
0
0.1
1
ABSOLUTE MAXIMUM RATINGS.
20
0.001
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
+100°C
+25°C
-55°C
VCE =10V
1.6
300
1.2
1.0
200
0.8
0.6
-55°C
+25°C
+100°C
+175°C
10
20
IC/IB =10
1.2
1.0
0.8
h
0.6
100
0.4
0.2
0.4
0.2
0
0.001
1.6
0.01
0.1
10
1
0
20
0.001
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
10
20
1
-55°C
+25°C
+100°C
+175°C
VCE =10V
- (Volts)
V
1.4
1.2
0.6
0.1
1.0
0.8
DC
1s
100ms
10ms
1ms
100µs
0.01
0.4
0.2
0.001
0
0.001
0.01
0.1
1
10
1V
10V
100V
20
IC - Collector Current (Amps)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 134
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-500
mA
Continuous Collector Current
IC
-150
mA
Base Current
IB
-200
mA
500
mW
-55 to +150
°C
Power Dissipation
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
1.4
- (Volts)
- Typical Gain
1.4
10
E
C
B
0.4
0.2
0.01
IC/IB =10
1.0
0.8
0.4
-55°C
+25°C
+100°C
+175°C
1.2
0.8
1.6
- Normalised Gain
IC/IB =50
1.2
0.001
h
1.6
V
V
- (Volts)
1.4
IC/IB =10
IC/IB =20
- (Volts)
1.6
FMMT558
1000V
PARAMETER
SYMBOL MIN.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-400
MAX.
V
IC=-100µA
Collector-Emitter Breakdown
Voltage
VBR(CEO)
-400
V
IC=-10mA*
-5
Emitter-Base Breakdown Voltage
V(BR)EBO
V
IE=-100µA
Collector Cut-Off Current
ICBO ; ICES
-100
nA
VCB=-320V; VCE=320V
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.2
-0.5
V
V
IC=-20mA, IB=-2mA *
IC=-50mA, IB=-6mA *
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
V
IC=-50mA, IB=-5mA *
Base-Emitter Turn On Voltage
VBE(on)
-0.9
V
IC=-50mA, VCE=-10V *
Static Forward Current Transfer
Ratio
hFE
100
100
15
Transition Frequency
fT
50
Collector-Base Breakdown
Voltage
Cobo
Switching times
ton
toff
IC=-1mA, VCE =-10V
IC=-50mA, VCE =-10V *
IC=-100mA, VCE =-10V*
300
MHz
IC=-10mA, VCE =-20V
f=20MHz
5
pF
VCB =-20V, f=1MHz
95
1600
ns
ns
IC=-50mA, VCE =-100V
IB1=5mA, IB2=-10mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 133
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FMMT558
ISSUE 3 – JANUARY 1996
FEATURES
* Excellent hFE characteristics at IC=100mA
* Low saturation voltages
COMPLEMENTARY TYPE – FMMT458
PARTMARKING DETAIL –
558
TYPICAL CHARACTERISTICS
1.4
1.0
0.6
V
0.6
0.2
0
0
0.1
1
ABSOLUTE MAXIMUM RATINGS.
20
0.001
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
+100°C
+25°C
-55°C
VCE =10V
1.6
300
1.2
1.0
200
0.8
0.6
-55°C
+25°C
+100°C
+175°C
10
20
IC/IB =10
1.2
1.0
0.8
h
0.6
100
0.4
0.2
0.4
0.2
0
0.001
1.6
0.01
0.1
10
1
0
20
0.001
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
10
20
1
-55°C
+25°C
+100°C
+175°C
VCE =10V
- (Volts)
V
1.4
1.2
0.6
0.1
1.0
0.8
DC
1s
100ms
10ms
1ms
100µs
0.01
0.4
0.2
0.001
0
0.001
0.01
0.1
1
10
1V
10V
100V
20
IC - Collector Current (Amps)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 134
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-500
mA
Continuous Collector Current
IC
-150
mA
Base Current
IB
-200
mA
500
mW
-55 to +150
°C
Power Dissipation
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
1.4
- (Volts)
- Typical Gain
1.4
10
E
C
B
0.4
0.2
0.01
IC/IB =10
1.0
0.8
0.4
-55°C
+25°C
+100°C
+175°C
1.2
0.8
1.6
- Normalised Gain
IC/IB =50
1.2
0.001
h
1.6
V
V
- (Volts)
1.4
IC/IB =10
IC/IB =20
- (Volts)
1.6
FMMT558
1000V
PARAMETER
SYMBOL MIN.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-400
MAX.
V
IC=-100µA
Collector-Emitter Breakdown
Voltage
VBR(CEO)
-400
V
IC=-10mA*
-5
Emitter-Base Breakdown Voltage
V(BR)EBO
V
IE=-100µA
Collector Cut-Off Current
ICBO ; ICES
-100
nA
VCB=-320V; VCE=320V
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.2
-0.5
V
V
IC=-20mA, IB=-2mA *
IC=-50mA, IB=-6mA *
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
V
IC=-50mA, IB=-5mA *
Base-Emitter Turn On Voltage
VBE(on)
-0.9
V
IC=-50mA, VCE=-10V *
Static Forward Current Transfer
Ratio
hFE
100
100
15
Transition Frequency
fT
50
Collector-Base Breakdown
Voltage
Cobo
Switching times
ton
toff
IC=-1mA, VCE =-10V
IC=-50mA, VCE =-10V *
IC=-100mA, VCE =-10V*
300
MHz
IC=-10mA, VCE =-20V
f=20MHz
5
pF
VCB =-20V, f=1MHz
95
1600
ns
ns
IC=-50mA, VCE =-100V
IB1=5mA, IB2=-10mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 133