SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE FMMT458 PARTMARKING DETAIL 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6 0.2 0 0 0.1 1 ABSOLUTE MAXIMUM RATINGS. 20 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC +100°C +25°C -55°C VCE =10V 1.6 300 1.2 1.0 200 0.8 0.6 -55°C +25°C +100°C +175°C 10 20 IC/IB =10 1.2 1.0 0.8 h 0.6 100 0.4 0.2 0.4 0.2 0 0.001 1.6 0.01 0.1 10 1 0 20 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 20 1 -55°C +25°C +100°C +175°C VCE =10V - (Volts) V 1.4 1.2 0.6 0.1 1.0 0.8 DC 1s 100ms 10ms 1ms 100µs 0.01 0.4 0.2 0.001 0 0.001 0.01 0.1 1 10 1V 10V 100V 20 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 134 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -500 mA Continuous Collector Current IC -150 mA Base Current IB -200 mA 500 mW -55 to +150 °C Power Dissipation Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 1.4 - (Volts) - Typical Gain 1.4 10 E C B 0.4 0.2 0.01 IC/IB =10 1.0 0.8 0.4 -55°C +25°C +100°C +175°C 1.2 0.8 1.6 - Normalised Gain IC/IB =50 1.2 0.001 h 1.6 V V - (Volts) 1.4 IC/IB =10 IC/IB =20 - (Volts) 1.6 FMMT558 1000V PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -400 MAX. V IC=-100µA Collector-Emitter Breakdown Voltage VBR(CEO) -400 V IC=-10mA* -5 Emitter-Base Breakdown Voltage V(BR)EBO V IE=-100µA Collector Cut-Off Current ICBO ; ICES -100 nA VCB=-320V; VCE=320V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.5 V V IC=-20mA, IB=-2mA * IC=-50mA, IB=-6mA * Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-50mA, IB=-5mA * Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-50mA, VCE=-10V * Static Forward Current Transfer Ratio hFE 100 100 15 Transition Frequency fT 50 Collector-Base Breakdown Voltage Cobo Switching times ton toff IC=-1mA, VCE =-10V IC=-50mA, VCE =-10V * IC=-100mA, VCE =-10V* 300 MHz IC=-10mA, VCE =-20V f=20MHz 5 pF VCB =-20V, f=1MHz 95 1600 ns ns IC=-50mA, VCE =-100V IB1=5mA, IB2=-10mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 133 SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE FMMT458 PARTMARKING DETAIL 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6 0.2 0 0 0.1 1 ABSOLUTE MAXIMUM RATINGS. 20 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC +100°C +25°C -55°C VCE =10V 1.6 300 1.2 1.0 200 0.8 0.6 -55°C +25°C +100°C +175°C 10 20 IC/IB =10 1.2 1.0 0.8 h 0.6 100 0.4 0.2 0.4 0.2 0 0.001 1.6 0.01 0.1 10 1 0 20 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 20 1 -55°C +25°C +100°C +175°C VCE =10V - (Volts) V 1.4 1.2 0.6 0.1 1.0 0.8 DC 1s 100ms 10ms 1ms 100µs 0.01 0.4 0.2 0.001 0 0.001 0.01 0.1 1 10 1V 10V 100V 20 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 134 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -500 mA Continuous Collector Current IC -150 mA Base Current IB -200 mA 500 mW -55 to +150 °C Power Dissipation Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 1.4 - (Volts) - Typical Gain 1.4 10 E C B 0.4 0.2 0.01 IC/IB =10 1.0 0.8 0.4 -55°C +25°C +100°C +175°C 1.2 0.8 1.6 - Normalised Gain IC/IB =50 1.2 0.001 h 1.6 V V - (Volts) 1.4 IC/IB =10 IC/IB =20 - (Volts) 1.6 FMMT558 1000V PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -400 MAX. V IC=-100µA Collector-Emitter Breakdown Voltage VBR(CEO) -400 V IC=-10mA* -5 Emitter-Base Breakdown Voltage V(BR)EBO V IE=-100µA Collector Cut-Off Current ICBO ; ICES -100 nA VCB=-320V; VCE=320V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.5 V V IC=-20mA, IB=-2mA * IC=-50mA, IB=-6mA * Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-50mA, IB=-5mA * Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-50mA, VCE=-10V * Static Forward Current Transfer Ratio hFE 100 100 15 Transition Frequency fT 50 Collector-Base Breakdown Voltage Cobo Switching times ton toff IC=-1mA, VCE =-10V IC=-50mA, VCE =-10V * IC=-100mA, VCE =-10V* 300 MHz IC=-10mA, VCE =-20V f=20MHz 5 pF VCB =-20V, f=1MHz 95 1600 ns ns IC=-50mA, VCE =-100V IB1=5mA, IB2=-10mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 133