FMMT458 1.6 Tamb=25°C IC/IB =20 - (Volts) - (Volts) 1.2 1.0 0.8 0 0.01 0.1 1 10 0.001 20 1 10 VCE(sat) v IC VCE(sat) v IC VCE =10V -55°C +25°C +100°C +175°C 1.6 300 20 IC/IB =10 1.0 200 - (Volts) 1.4 1.2 0.8 1.2 0.6 0.4 0.6 V 100 0.2 0.4 0.2 0.01 0.1 10 1 0 20 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C I - Collector Current (Amps) 1.4 VCE =10V 1.2 1.0 0.8 0.6 0.4 0.2 10 Single Pulse Test at Tamb=25°C 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0 0.001 458 0.01 0.1 1 10 20 0.001 1 IC - Collector Current (Amps) VBE(on) v IC 10 100 VCE - Collector Voltage (Volts) Safe Operating Area 3 - 113 SOT23 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V 1000 20 5 V 225 mA 1 A Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Pulse Current ICM Base Current IB 200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 1.0 0.8 1.6 - (Volts) 0.1 IC - Collector Current (Amps) 1.0 V 0.01 IC - Collector Current (Amps) +100°C +25°C -55°C 0.001 PARTMARKING DETAIL ABSOLUTE MAXIMUM RATINGS. V V - Normalised Gain h 1.0 0.2 0 0 FMMT558 B 1.2 0.4 0.2 1.4 COMPLEMENTARY TYPE 1.4 0.6 0.4 1.6 IC/IB =10 0.8 0.6 0.001 E C -55°C +25°C +100°C +175°C 1.6 IC/IB =50 1.4 FMMT458 ISSUE 3 OCTOBER 1995 FEATURES * 400 Volt VCEO TYPICAL CHARACTERISTICS IC/IB =10 SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO MIN. 400 VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) UNIT V CONDITIONS. IC=100µA 400 V IC=10mA* 5 V IE=100µA VBE(sat) 100 100 100 0.2 0.5 0.9 nA nA nA V V V VCB=320V VCE=320V VEB=4V IC=20mA, IB=2mA* IC=50mA, IB=6mA* IC=50mA, IB=5mA* VBE(on) 0.9 V IC=50mA, VCE=10V* MHz pF IC=1mA, VCE=10V IC=50mA, VCE=10V* IC=100mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz Transition Frequency fT Collector-Base Breakdown Voltage Switching times Cobo ns ns IC=50mA, VCC=100V IB1=5mA, IB2=-10mA hFE ton toff 100 100 15 50 MAX. 300 5 135 Typical 2260 Typical *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 112 FMMT458 1.6 Tamb=25°C IC/IB =20 - (Volts) - (Volts) 1.2 1.0 0.8 0 0.01 0.1 1 10 0.001 20 1 10 VCE(sat) v IC VCE(sat) v IC VCE =10V -55°C +25°C +100°C +175°C 1.6 300 20 IC/IB =10 1.0 200 - (Volts) 1.4 1.2 0.8 1.2 0.6 0.4 0.6 V 100 0.2 0.4 0.2 0.01 0.1 10 1 0 20 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C I - Collector Current (Amps) 1.4 VCE =10V 1.2 1.0 0.8 0.6 0.4 0.2 10 Single Pulse Test at Tamb=25°C 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0 0.001 458 0.01 0.1 1 10 20 0.001 1 IC - Collector Current (Amps) VBE(on) v IC 10 100 VCE - Collector Voltage (Volts) Safe Operating Area 3 - 113 SOT23 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V 1000 20 5 V 225 mA 1 A Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Pulse Current ICM Base Current IB 200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 1.0 0.8 1.6 - (Volts) 0.1 IC - Collector Current (Amps) 1.0 V 0.01 IC - Collector Current (Amps) +100°C +25°C -55°C 0.001 PARTMARKING DETAIL ABSOLUTE MAXIMUM RATINGS. V V - Normalised Gain h 1.0 0.2 0 0 FMMT558 B 1.2 0.4 0.2 1.4 COMPLEMENTARY TYPE 1.4 0.6 0.4 1.6 IC/IB =10 0.8 0.6 0.001 E C -55°C +25°C +100°C +175°C 1.6 IC/IB =50 1.4 FMMT458 ISSUE 3 OCTOBER 1995 FEATURES * 400 Volt VCEO TYPICAL CHARACTERISTICS IC/IB =10 SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO MIN. 400 VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) UNIT V CONDITIONS. IC=100µA 400 V IC=10mA* 5 V IE=100µA VBE(sat) 100 100 100 0.2 0.5 0.9 nA nA nA V V V VCB=320V VCE=320V VEB=4V IC=20mA, IB=2mA* IC=50mA, IB=6mA* IC=50mA, IB=5mA* VBE(on) 0.9 V IC=50mA, VCE=10V* MHz pF IC=1mA, VCE=10V IC=50mA, VCE=10V* IC=100mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz Transition Frequency fT Collector-Base Breakdown Voltage Switching times Cobo ns ns IC=50mA, VCC=100V IB1=5mA, IB2=-10mA hFE ton toff 100 100 15 50 MAX. 300 5 135 Typical 2260 Typical *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 112