ROHM 2SC5873S

2SC5873S
Transistors
Medium power transistor (30V, 0.5A)
2SC5873S
zExternal dimensions (Unit : mm)
zFeatures
1) High speed switching.
(Tf : Typ. : 50ns at IC = 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2085S
4.0
2.0
(15min.)
3min.
3.0
SPT
0.45
2.5
0.5
0.45
5.0
(1) Emitter
(2) Collector
(3) Base
(1) (2) (3)
Taping specifications
Symbol : C5873S
zApplications
Small signal low frequency amplifier
High speed switching
zStructure
NPN Silicon epitaxial planar transistor
zPackaging specifications
Taping
Package
Type
TP
Code
Basic ordering unit (pieces)
5000
2SC5873S
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Parameter
VEBO
6
V
DC
IC
0.5
A
Pulsed
ICP
1.0
A
Power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Tstg
−55 to 150
°C
Emitter-base voltage
Collector current
Range of storage temperature
∗
∗Pw=10ms
Rev.A
1/3
2SC5873S
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Min.
30
30
6
−
−
Typ.
−
−
−
−
−
Max.
−
−
−
1.0
1.0
Unit
V
V
V
µA
µA
Collector-emitter saturation voltage
VCE (sat)
−
150
300
mV
hFE
120
−
390
−
MHz
DC current gain
fT
−
300
−
Corrector output capacitance
Cob
−
5
−
pF
Turn-on time
Storage time
Fall time
Ton
Tstg
Tf
−
−
−
40
120
50
−
−
−
ns
ns
ns
Transition frequency
Condition
IC=1mA
IC=100µA
IE=100µA
VCB=20V
VEB=4V
IC=100mA
IB=10mA
VCE=2V
IC=50mA
VCE=10V
IE= −100mA
f=10MHz
VCB=10V
IE=0mA
f=1MHz
IC=500mA
IB1=50mA
IB2= −50mA
VCC 25V
∗
∗
∗Non repetitive pulse
zhFE RANK
Q
120−270
R
180−390
zElectrical characteristic curves
1000
0.1
DC
0.01
Single
non repetitive
Pulsed
1
10
Tstg
100
Ton
Tf
10
0.01
100
1000
Ta=25°C
VCC=25V
IC / IB=10 / 1
DC CURRENT GAIN : hFE
100ms
10ms
1ms
0.001
0.1
0.1
100
VCE=2V
Ta=125°C
Ta=25°C
Ta= −40°C
10
0.001
1
0.01
0.1
1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 Safe Operating Area
Fig.2 Switching Time
Fig.3 DC Current Gain vs.
Collector Current (Ι)
100
10
0.001
10
Ta=25°C
VCE=5V
VCE=3V
VCE=2V
0.01
0.1
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
1
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
0.01
0.001
10
IC / IB=10 / 1
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
1000
DC CURRENT GAIN : hFE
SWITCHING TIME : (ns)
1
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
COLLECTOR CURRENT : IC (A)
10
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
Ta=25°C
1
IC / IB=20 / 1
IC / IB=10 / 1
0.1
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
Rev.A
2/3
2SC5873S
Transistors
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
0.001
0.01
0.1
COLLECTOR CURRENT : IC (A)
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
0
0.5
1
1.5
1000
Ta=25°C
VCE=10V
100
10
0.001
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.7 Base-Emitter Saturation
Voltage vs. Collecter Current
100
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
0.01
1
VCE=2V
TRANSITION FREQUENCY : fT (MHz)
1
IC / IB=10 / 1
COLLECTOR CURRENT : IC (A)
BASE EMITTER SATURATION
VOLTAGE : VBE (sat) (V)
10
0.01
0.1
1
EMITTER CURRENT : IE (A)
Fig.8 Grounded Emitter
Propagation Characteristics
Fig.9 Transition Frequency
Ta=25°C
f=1MHz
10
1
0.1
1
10
100
BASE TO COLLECTOR VOLTAGE : VCB (V)
Fig.10 Collector Output Capacitance
zSwitching characteristics measurement circuits
RL=50Ω
VIN
IB1
IC
VCC 25V
PW
IB2
PW 50 S
Duty cycle ≤ 1%
IB1
IB2
Base current
waveform
90%
IC
Collector current
waveform
10%
Ton
Tstg Tf
Rev.A
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1