2SA2090 Transistors Medium power transistor (−60V, −0.5A) 2SA2090 zDimensions (Unit : mm) TSMT3 0.4 (1) (3) 1.9 zApplications High speed switching, Low noise 0.3 ~ 0.6 0.85 1.0MAX 0 ~ 0.1 (1) Base (2) Emitter (3) Collector 0.7 0.16 (2) 0.95 0.95 2.8 1.6 2.9 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 500mA) 2) Low saturation voltage, typically. (Typ. : −150mV at IC = −100mA, IB = −10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5868. Each lead has same dimensioins Abbreviated symbol : VM zStructure NPN Silicon epitaxial planar zPackaging Specifications Package Type Code Basic ordering unit (pieces) Taping TL 3000 2SA2090 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −60 V Emitter-base voltage VEBO −6 V IC −0.5 A ICP −1.0 A Power dissipation PC 500 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current ∗1 ∗2 ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land. 1/3 2SA2090 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO −60 − − V IC= −1mA Collector-base breakdown voltage BVCBO −60 − − V IC= −100mA − V IE= −100µA −1.0 µA VCB= −60V Conditions BVEBO −6 − Collector cut-off current ICBO − − Emitter cut-off current IEBO − − −1.0 µA VEB= −4V VCE(sat) − −150 −300 mV IC= −100mA, IB= −10mA Emitter-base breakdown voltage Collector-emitter saturation voltage DC current gain hFE 120 − 270 − Transition frequency fT − 400 − MHz Collector output capacitance Cob − 10 − pF VCB= −10V, IE=0mA, f=1MHz Turn-on time Ton − 35 − ns Storage time Tstg − 100 − ns Tf − 60 − ns IC= −500mA, IB1= −50mA IB2=50mA VCC ∼− −25V Fall time VCE= −2V, IC= −50mA VCE= −10V, IE=100mA, f=10MHz ∗1 ∗1 ∗1 Measured using pulse current zhFE RANK Q 120-270 zElectrical characteristic curves 10 350µA 80 300µA 250µA 60 200µA 150µA 40 100µA 1000 1 500µs 100ms 0.1 DC 0.01 20 50µA Ta=25°C VCC=25V 10ms 1ms SWITCHING TIME (ns) 400µA IB=450µA COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) 100 Tstg 100 Tf Ton Single non repoetitive pulse 0µA 0 0 1 2 3 4 0.001 0.1 5 Fig.1 Typical output characteristics VCE=2V 10 1000 Ta=25°C 10 Ta=25°C VCE=5V VCE=2V VCE=3V 100 1 Fig.3 Switching Time COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE Ta=−40°C 0.1 COLLECTOR CURRENT : IC (A) Fig.2 Safe operating area Ta=100°C 100 10 0.01 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 1 IC/IB=10/1 1 125°C 0.1 25°C −40°C 10 0.001 10 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( Ι ) 0.001 0.01 0.1 COLLECTOR CURRENT : IC (A) Fig.5 DC current gain vs. collector current (ΙΙ) 1 0.01 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) 2/3 2SA2090 Transistors 1 IC/IB=100/1 0.1 IC/IB=20/1 IC/IB=10/1 −40°C 1 25°C 125°C IC/IB=10/1 0.01 0.001 0.01 0.1 0.1 0.001 1 10 1 0.1 1 100 10 0.001 0.01 0.1 1 EMITTER CURRENT : IE (A) Fig.8 Base-emitter saturation voltage vs. collector current Fig.9 Transition frequency 1 Ta=25°C f=1MHz COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE : COB (pF) 100 0.1 Ta=25°C VCE=10V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current (ΙΙ) 0.01 1000 TRANSITION FREQUENCY : FT (MHz) 10 Ta=25°C BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) 10 10 VCE=2V 125°C 0.1 25°C −40°C 0.01 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 100 BASE TO EMITTER VOLTAGE : VBE (V) BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.11 Ground emitter propagation characteristics Fig.10 Collector output capacitance zSwitching characteristics measurement circuit RL=50Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle 1% IB1 IB2 Base current waveform 90% IC Collector current waveform 10% Ton Tstg Tf 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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