High voltage discharge, High speed switching, Low Noise (60V, 3A) 2SA2073 Dimensions (Unit : mm) Features 1) High speed switching. ( tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC = 2.0A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the 2SC5826. ATV (1) Emitter (2) Collector (3) Base Applications High speed switching, Low noise Taping specifications Abbreviated symbol : A2073 Structure PNP Silicon epitaxial planar transistor Packaging specifications Package Type Taping Code TV2 Basic ordering unit (pieces) 2500 2SA2073 Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −60 V Emitter-base voltage Parameter Collector current VEBO −6 V DC IC −3 A Pulsed ICP −6 A PC 1.0 W tj 150 °C tstg −55 to 150 °C Power dissipation Junction temperature Range of storage temperature ∗ ∗Pw=10ms www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 1/3 2011.06 - Rev.Ｃ 2SA2073 Data Sheet Electrical characteristics (Ta=25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. −60 −60 −6 − − Typ. − − − − − Max. − − − −1.0 −1.0 Unit V V V μA μA Collector-emitter saturation voltage VCE (sat) − −200 −500 mV hFE 120 − 270 − DC current gain Transistor frequency Collector output capacitance Turn-on time Storage time Fall time fT − 200 − MHz Cob − 40 − pF ton tstg tf − − − 20 130 20 − − − ns ns ns Condition IC= −1mA IC= −100μA IE= −100μA VCB= −40V VEB= −4V IC= −2.0A IB= −200mA VCE= −2V IC= −100mA VCE= −10V IE=100mA f=10MHz VCB= −10V IE=0mA f=1MHz IC= −3A IB1= −300mA IB2=300mA VCC ∼ − −25V ∗1 ∗1 ∗2 ∗1 Single pulse ∗2 See switching characteristics measurement circuits hFE RANK Q 120−270 Electrical characteristic curves −10 −160 −800μA −700μA −120 −600μA −500μA −80 −400μA −300μA −200μA −40 −100μA 0 -1 -2 -3 -4 −1 25°C 125°C -5 −40°C −0.1 −0.01 0μA 0 COLLECTOR CURRENT : IC(A) COLLECTOR CURRENT : IC (mA) −900μA 1000 VCE=−2V IB=−1000μA DC CURRENT GAIN : hFE −200 0 −0.5 −1.0 Ta=25°C VCE=−5V VCE=−3V 100 VCE=−2V 10 1 −0.001 −1.5 −0.01 −0.1 −1 −10 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.2 Grounded emitter propagation characteristics Fig.3 DC current gain vs.collector current ( Ι ) 1000 VCE=−2V DC CURRENT GAIN : hFE 125°C 25°C 100 −40°C 10 1 −0.001 −0.01 −0.1 −1 −10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs.collector current ( ΙΙ ) www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Fig.1 Typical output characteristics −1 Ta=25°C −0.1 Ic/Ib=20/1 Ic/Ib=10/1 −0.01 −0.001 −0.001 −0.01 −0.1 −1 −10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage vs.collector current ( Ι ) 2/3 COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) −1 IC/Ib=10/1 125°C 25°C −0.1 −0.01 −0.001 −40°C −0.01 −0.1 −1 −10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs.collector current ( ΙΙ ) 2011.06 - Rev.Ｃ −10 1000 IC/Ib=10/1 −40°C −1 25°C 125°C −0.1 −0.001 −0.01 −0.1 −1 Ta=25°C VCE=−10V 100 10 1 0.001 −10 COLLECTOR CURRENT : IC (A) 0.1 1 10 EMITTER CURRENT : IE (A) Fig.7 Base-emitter saturation voltage vs. collector current 1000 0.01 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Data Sheet TRANSITION FREQUENCY : fT (MHz) BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) 2SA2073 1000 Ta=25°C f=1MHz 100 10 1 −0.1 −1 −10 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Transition frequency Fig.9 Collector output capacitance Ta=25°C VCC=−25V tstg SW (ns) tf 100 10 −0.01 ton −0.1 −1 −10 COLLECTOR CURRENT : Ic (A) Fig.10 Switching Time Switching characteristics measurement circuits RL=8.3Ω IC IB1 VIN PW VCC −25V IB2 PW 50μs DUTY CYCLE 1% IB2 IB1 BASE CURRENT WAVEFORM ton tstg tf 90% COLLECTOR CURRENT WAVEFORM www.rohm.com c 2011 ROHM Co., Ltd. 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