Midium Power Transistors (80V / 2.5A) 2SCR544R Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) TSMT3 1.0MAX Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6 2.8 (3) 0.95 0.95 0.16 1.9 (1) Base Applications Driver (2) Emitter Abbreviated symbol : NS (3) Collector Packaging specifications Inner circuit (Unit : mm) Package Taping Type Code TL Basic ordering unit (pieces) 3000 2SCR544R Absolute maximum ratings (Ta = 25°C) Symbol Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 0~0.1 (2) (1) 0.3~0.6 2) High speed switching DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 (3) (1) Limits Unit 80 80 6 2.5 5 V V V A A PD *2 0.5 PD *3 1 Tj 150 Tstg -55 to 150 (1) Base (2) Emitter (3) Collector (2) W W °C °C *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2010.02 - Rev.A 2SCR544R Data Sheet Electrical characteristic (Ta = 25°C) Parameter Conditions Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCBO 80 - - V IC= 1ｍA Collector-base breakdown voltage BVCEO 80 - - V IC= 100μA Emitter-base breakdown voltage BVEBO 6 - - V IE= 100μA Collector cut-off current ICBO - - 1 μA VCB= 80V Emitter cut-off current IEBO - - 1 μA VEB= 4V VCE(sat) - 100 300 hFE 120 - 390 Collector-emitter staturation voltage DC current gain mV IC= 1A, IB= 50mA - fT - 280 - Collector output capacitance Cob - 16 - pF Turn-on time ton *1 - 50 - ns Storage time tstg *1 - 700 - ns t f *1 - 40 - ns Transition frequency Fall time VCE= 3V, IC= 100mA VCE= 10V MHz IE=-500mA, f=100MHz VCB= 10V, IE=0A f=1MHｚ IC= 1.3A,IB1= 130mA, _ 10V IB2=-130mA,VCC ~ *1 See switching time test circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2010.02 - Rev.A 2SCR544R Data Sheet Electrical characteristics curves 2.5mA 1000 COLLECTOR CURRENT : IC[A] 0.35 DC CURRENT GAIN : hFE 0.40 1.5mA 0.30 0.25 1.0mA 0.20 0.15 0.10 0.5mA 0.05 1000 Ta=25°C 2.0mA 0.45 VCE = 3V DC CURRENT GAIN : hFE 5mA 3mA 0.50 VCE = 5V 3V 100 Ta=125°C 75°C 25°C -40°C 100 Ta=25°C 0.00 10 0 0.5 1 1.5 10 1 2 COLECTOR TO EMITTER VOLTAGE : VCE[V] 10 100 1000 10000 1 10 100 1000 10000 COLLECTOR CURRENT : IC[mA] COLLECTOR CURRENT : IC[mA] Ta=25°C 0.1 IC/IB=50 20 10 0.01 1 10000 IC/IB=20 COLLECTOR CURRENT : IC [mA] 1 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] COLLECTOR SATURATION VOLTAGE : VCE (sat)[V] Fig.1 Typical Output Characteristics 0.1 Ta=125°C 75°C 25°C -40°C 0.01 1 10 100 1000 10000 Ta=125°C 75°C 25°C -40°C 1000 100 10 1 0.001 0.001 VCE = 3V 1 10 100 1000 10000 COLLECTOR CURRENT : IC[mA] COLLECTOR CURRENT : IC[mA] 0 0.5 1 1.5 BASE TO EMITTER VOLTAGE : VBE[V] Ta=25°C f=1MHz IE=0A IC=0A Cib 100 10 Cob 1 0.1 1 10 100 COLLECTOR - BASE VOLTAGE : VCB [V] EMITTER - BASE VOLTAGE : VEB [V] Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ TRANSITION FREQUENCY : fT[MHz] 1000 EMITTER INPUT CAPACITANCE : Cib(pF) COLLECTOR OUTPUT CAPACITANCE : Cob(pF) Fig.6 Ground Emitter Propagation Characteristics 1000 Ta=25°C VCE=10V 100 10 10 100 1000 EMITTER CURRENT : IE[mA] Fig.8 Gain Bandwidth Product vs. Emitter Current 3/4 2010.02 - Rev.A 2SCR544R Data Sheet Switching time test circuit RL=7.5Ω IB1 VIN IC VCC ~_10V IB2 Pw Pw ~_50μs DUTY CYCLE≤1% IB1 BASE CURENT WAVEFORM IB2 ton tstg tf 90% IC COLLECTOR CURRENT WAVEFORM 10% www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2010.02 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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