ROHM 2SA1952_09

High-speed Switching Transistor (-60V, -5A)
2SA1952
Dimensions (Unit : mm)
Features
1) High speed switching. (tf : Typ. 0.15 s at IC = -3A)
2) Low VCE(sat). (Typ. -0.2V at IC/IB= -3/-0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103.
1.5
5.1
( 2)
6.5
5.5
2.3
(1)
0.9
0.75
2SA1952
Collector current
IC
Collector power dissipation
PC
Junction temperature
Storage temperature
Tj
Tstg
Unit
V
V
V
A
A(Pulse)
W
W(Tc=25°C)
°C
°C
C0.5
0.8Min.
1.5
2.3
Limits
−100
−60
−5
−5
−10
1
10
150
−55~+150
1.0
Symbol
VCBO
VCEO
VEBO
0.5
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
0.5
Absolute maximum ratings (Ta = 25C)
0.65
2.3
(3)
0.9
2.5
9.5
ROHM : CPT3
EIAJ : SC-63
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SA1952
CPT3
Q
TL
2500
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVCBO
BVCEO
BVEBO
ICBO
IEBO
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
−100
−60
−5
−
−
−
−
−
−
120
40
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
80
130
−
−
−
−
−
−
−10
−10
−0.3
−0.5
−1.2
−1.5
270
−
−
−
0.3
1.5
0.3
V
V
V
μA
μA
V
V
V
V
−
−
MHz
pF
μs
μs
μs
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
hFE1
hFE2
fT
Cob
ton
tstg
tf
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Conditions
IC = −50μA
IC = −1mA
IE = −50μA
VCB = −100V
VEB = −5V
IC/IB= −3A/ −0.15A
IC/IB= −4A/ −0.2A
IC/IB= −3A/ −0.15A
IC/IB= −4A /−0.2A
VCE = −2V , IC = −1A
VCE = −2V , IC = −3A
VCE = −10V , IE = 0.5A , f = 30MHz
VCB = −10V , IE = 0A , f = 1MHz
IC = −3A , RL = 10Ω
IB1 = −IB2 = −0.15A
VCC −30V
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2009.12 - Rev.A
2SA1952
Data Sheet
Electrical characteristics curves
−5
COLLECTOR CURRENT : IC (A)
−60mA
−50mA
−40mA
−3
−30mA
−2
−20mA
−1
−10mA
IB=0A
0
−1
0
−2
−3
−4
−5
−2
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
0
VBE(sat)
−0.5
−0.2
−0.1
−0.05
Ta=100°C
VCE(sat)
25°C
−0.02
−0.01
−0.01 −0.02
−25°C
−0.05 −0.1 −0.2 −0.5
−1
−2
−5
−10
Ta=100°C
20
25°C
−25°C
10
5
Ta=25°C
VCE= −10A
500
200
100
50
20
10
5
2
1
0.001 0.002
0.005 0.01 0.02
0.05
0.1
0.2
0.5
Fig.4 Collector-emitter saturation voltage
vs. collector current
Base-emitter saturation voltage
−0.05 −0.1 −0.2 −0.5
−1
−2
−5
−10
COLLECTOR CURRENT : IC (A)
1
EMITTER CURRENT : IE (A)
COLLECTOR CURRENT : IC (A)
10
50
1
−0.01 −0.02
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8
Fig.2 Ground emitter propagation characteristics
TRANSITION FREQUENCY: fT (MHz)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
BASE SATURATION VOLTAGE
: VBE(sat) (V)
25°C
100°C
−1
100
2
1000
IC/IB=20
Pulsed
Ta= −25°C
−2
200
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Ground emitter output characteristics
−5
VCE= −2V
Pulsed
500
−1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
−10
1000
VCE= −2V
Pulsed
Ta=100°C
25°C
−25°C
DC CURRENT GAIN : hEF
−10
0mA
COLLECTOR CURRENT : IC (A)
−4
−10
Tc =25°C
−70mA
Fig.5 Resistance ratio vs. emitter current
Fig.3 DC current gain vs. collector current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
A A
0m m
−9 −80
−5
10000
Ta=25°C
f=1MHz
IE=0A
5000
2000
1000
500
200
100
50
20
10
−0.1 −0.2
−0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
IE=20IB1= −20IB2
TURN ON TIME : ton(μs)
STRAGE TIME : tstg(μs)
FALL TIME
: tf(μs)
5
2
1
tstg
ton
tf
0.5
0.2
0.1
0.05
0.02
0.01
−0.05 −0.1 −0.2 −0.5 −1
−2
−5 −10 −20
−50
COLLECTOR CURRENT : IC (A)
Fig.7 Switching characteristics
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/2
2009.12 - Rev.A
Notice
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