Midium Power Transistors (80V / 2.5A) 2SCR544R Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) TSMT3 1.0MAX Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6 2.8 (3) 0~0.1 0.3~0.6 2) High speed switching (2) (1) 0.95 0.95 0.16 1.9 (1) Base Applications Driver (2) Emitter Packaging specifications Inner circuit (Unit : mm) Package Taping Type Code TL Basic ordering unit (pieces) 3000 2SCR544R Absolute maximum ratings (Ta = 25C) Symbol Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Abbreviated symbol : NS (3) Collector DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 (3) (1) Limits Unit 80 80 6 2.5 5 V V V A A PD *2 0.5 PD *3 1 Tj 150 Tstg -55 to 150 (1) Base (2) Emitter (3) Collector (2) W W C C *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2010.02 - Rev.A 2SCR544R Data Sheet Electrical characteristic (Ta = 25C) Parameter Conditions Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCBO 80 - - V IC= 1ｍA Collector-base breakdown voltage BVCEO 80 - - V IC= 100μA Emitter-base breakdown voltage BVEBO 6 - - V IE= 100μA Collector cut-off current ICBO - - 1 A VCB= 80V Emitter cut-off current IEBO - - 1 A VEB= 4V VCE(sat) - 100 300 hFE 120 - 390 Collector-emitter staturation voltage DC current gain mV IC= 1A, IB= 50mA - fT - 280 - Collector output capacitance Cob - 16 - pF Turn-on time ton *1 - 50 - ns Storage time tstg *1 - 700 - ns t f *1 - 40 - ns Transition frequency Fall time VCE= 3V, IC= 100mA VCE= 10V MHz IE=-500mA, f=100MHz VCB= 10V, IE=0A f=1MHｚ IC= 1.3A,IB1= 130mA, _ 10V IB2=-130mA,VCC ~ *1 See switching time test circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2010.02 - Rev.A 2SCR544R Data Sheet Electrical characteristics curves 2.5mA 1000 DC CURRENT GAIN : hFE 0.35 1.5mA 0.30 0.25 1.0mA 0.20 0.15 0.10 0.5mA 0.05 VCE = 5V 3V 100 10 0.5 1 1.5 10 1 2 COLECTOR TO EMITTER VOLTAGE : VCE[V] 0.1 IC/IB=50 20 10 0.01 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] COLLECTOR SATURATION VOLTAGE : VCE (sat)[V] Ta=25°C 100 1000 10000 1 1 10000 IC/IB=20 0.1 Ta=125°C 75°C 25°C -40°C 0.01 1 10 100 1000 10000 1 COLLECTOR CURRENT : IC[mA] Ta=25°C f=1MHz IE=0A IC=0A Cib 100 10 Cob 1 0.1 1 10 100 COLLECTOR - BASE VOLTAGE : VCB [V] EMITTER - BASE VOLTAGE : VEB [V] Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ TRANSITION FREQUENCY : fT[MHz] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( Ι ) 1000 100 1000 10000 VCE = 3V Ta=125°C 75°C 25°C -40°C 1000 100 10 1 0.001 0.001 10 COLLECTOR CURRENT : IC[mA] Fig3. DC Current Gain vs. Collector Current ( ΙΙ ) COLLECTOR CURRENT : IC[mA] Fig.2 DC Current Gain vs. Collector Current ( Ι ) Fig.1 Typical Output Characteristics 1 10 COLLECTOR CURRENT : IC [mA] 0 EMITTER INPUT CAPACITANCE : Cib(pF) Ta=125°C 75°C 25°C -40°C 100 Ta=25°C 0.00 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) VCE = 3V 10 100 1000 10000 0 1 1.5 BASE TO EMITTER VOLTAGE : VBE[V] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( ΙΙ ) Fig.6 Ground Emitter Propagation Characteristics 10 Single pulse 1000 Ta=25°C VCE=10V 100 10 10 0.5 COLLECTOR CURRENT : IC[mA] COLLECTOR CURRENT : IC [A] COLLECTOR CURRENT : IC[A] 0.40 1000 Ta=25°C 2.0mA 0.45 DC CURRENT GAIN : hFE 5mA 3mA 0.50 100 EMITTER CURRENT : IE[mA] Fig.8 Gain Bandwidth Product vs. Emitter Current 3/4 1000 1ms 10ms 100ms 1 0.1 0.01 DC Ta=25°C (Mounted on a recommended land) 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE[V] Fig.9 Safe Operating Area 2010.02 - Rev.A 2SCR544R Data Sheet Switching time test circuit RL=7.5Ω IB1 VIN IC VCC ~_10V IB2 Pw Pw ~_50μs DUTY CYCLE1% IB1 BASE CURENT WAVEFORM IB2 ton tstg tf 90% IC COLLECTOR CURRENT WAVEFORM 10% www.rohm.com c 2009 ROHM Co., Ltd. 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