ROHM 2SCR544R

Midium Power Transistors (80V / 2.5A)
2SCR544R
 Structure
NPN Silicon epitaxial planar transistor
 Dimensions (Unit : mm)
TSMT3
1.0MAX
 Features
1) Low saturation voltage, typically
VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA)
2.9
0.85
0.4
0.7
1.6
2.8
(3)
0~0.1
0.3~0.6
2) High speed switching
(2)
(1)
0.95 0.95
0.16
1.9
(1) Base
 Applications
Driver
(2) Emitter
 Packaging specifications
 Inner circuit (Unit : mm)
Package
Taping
Type
Code
TL
Basic ordering unit (pieces) 3000
2SCR544R

 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Abbreviated symbol : NS
(3) Collector
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
VCBO
VCEO
VEBO
IC
ICP *1
(3)
(1)
Limits
Unit
80
80
6
2.5
5
V
V
V
A
A
PD *2
0.5
PD *3
1
Tj
150
Tstg
-55 to 150
(1) Base
(2) Emitter
(3) Collector
(2)
W
W
C
C
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
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1/4
2010.02 - Rev.A
2SCR544R
Data Sheet
 Electrical characteristic (Ta = 25C)
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCBO
80
-
-
V
IC= 1mA
Collector-base breakdown voltage
BVCEO
80
-
-
V
IC= 100μA
Emitter-base breakdown voltage
BVEBO
6
-
-
V
IE= 100μA
Collector cut-off current
ICBO
-
-
1
A
VCB= 80V
Emitter cut-off current
IEBO
-
-
1
A
VEB= 4V
VCE(sat)
-
100
300
hFE
120
-
390
Collector-emitter staturation voltage
DC current gain
mV IC= 1A, IB= 50mA
-
fT
-
280
-
Collector output capacitance
Cob
-
16
-
pF
Turn-on time
ton *1
-
50
-
ns
Storage time
tstg *1
-
700
-
ns
t f *1
-
40
-
ns
Transition frequency
Fall time
VCE= 3V, IC= 100mA
VCE= 10V
MHz
IE=-500mA, f=100MHz
VCB= 10V, IE=0A
f=1MHz
IC= 1.3A,IB1= 130mA,
_ 10V
IB2=-130mA,VCC ~
*1 See switching time test circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/4
2010.02 - Rev.A
2SCR544R
Data Sheet
Electrical characteristics curves
2.5mA
1000
DC CURRENT GAIN : hFE
0.35
1.5mA
0.30
0.25
1.0mA
0.20
0.15
0.10
0.5mA
0.05
VCE = 5V
3V
100
10
0.5
1
1.5
10
1
2
COLECTOR TO EMITTER VOLTAGE : VCE[V]
0.1
IC/IB=50
20
10
0.01
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
COLLECTOR SATURATION VOLTAGE : VCE (sat)[V]
Ta=25°C
100
1000
10000
1
1
10000
IC/IB=20
0.1
Ta=125°C
75°C
25°C
-40°C
0.01
1
10
100
1000
10000
1
COLLECTOR CURRENT : IC[mA]
Ta=25°C
f=1MHz
IE=0A
IC=0A
Cib
100
10
Cob
1
0.1
1
10
100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
○
TRANSITION FREQUENCY : fT[MHz]
Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current ( Ι )
1000
100
1000
10000
VCE = 3V
Ta=125°C
75°C
25°C
-40°C
1000
100
10
1
0.001
0.001
10
COLLECTOR CURRENT : IC[mA]
Fig3. DC Current Gain vs.
Collector Current ( ΙΙ )
COLLECTOR CURRENT : IC[mA]
Fig.2 DC Current Gain vs.
Collector Current ( Ι )
Fig.1 Typical Output Characteristics
1
10
COLLECTOR CURRENT : IC [mA]
0
EMITTER INPUT CAPACITANCE : Cib(pF)
Ta=125°C
75°C
25°C
-40°C
100
Ta=25°C
0.00
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
VCE = 3V
10
100
1000
10000
0
1
1.5
BASE TO EMITTER VOLTAGE : VBE[V]
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current ( ΙΙ )
Fig.6 Ground Emitter Propagation
Characteristics
10 Single pulse
1000 Ta=25°C
VCE=10V
100
10
10
0.5
COLLECTOR CURRENT : IC[mA]
COLLECTOR CURRENT : IC [A]
COLLECTOR CURRENT : IC[A]
0.40
1000
Ta=25°C
2.0mA
0.45
DC CURRENT GAIN : hFE
5mA 3mA
0.50
100
EMITTER CURRENT : IE[mA]
Fig.8 Gain Bandwidth Product vs.
Emitter Current
3/4
1000
1ms
10ms
100ms
1
0.1
0.01
DC Ta=25°C
(Mounted on a
recommended land)
0.001
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.9 Safe Operating Area
2010.02 - Rev.A
2SCR544R
Data Sheet
Switching time test circuit
RL=7.5Ω
IB1
VIN
IC
VCC
~_10V
IB2
Pw
Pw
~_50μs
DUTY CYCLE1%
IB1
BASE CURENT WAVEFORM
IB2
ton
tstg
tf
90%
IC
COLLECTOR CURRENT
WAVEFORM
10%
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c 2009 ROHM Co., Ltd. All rights reserved.
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2010.02 - Rev.A
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R1010A