ROHM 2SC5103TLQ

High speed switching transistor (60V, 5A)
2SC5103
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
PC
Tj
Tstg
Limits
100
60
5
5
10
1
10
150
−55 to +150
Unit
V
V
V
A(DC)
A(Pulse) ∗
W
W(Tc=25°C)
°C
°C
0.75
0.9
5.1
6.5
2.3
1.5
0.65
0.9
0.8Min.
C0.5
1.5
2.5
ROHM : CPT3
EIAJ : SC-63
9.5
0.5
Absolute maximum ratings (Ta=25C)
5.5
2.3
1.0
0.5
(3) (2) (1)
Dimensions (Unit : mm)
2.3
Features
1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A)
2) High speed switching (tf : Typ. 0.1 s at IC = 3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA1952.
(1) Base
(2) Collector
(3) Emitter
∗ Single pulse Pw=100ms
Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SC5103
CPT3
Q
TL
2500
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVCBO
BVCEO
BVEBO
ICBO
IEBO
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
100
60
5
−
−
−
−
−
−
120
40
−
−
−
−
−
−
−
−
−
−
0.15
−
−
−
−
−
120
80
−
−
0.1
−
−
−
10
10
0.3
0.5
1.2
1.5
270
−
−
−
0.3
1.5
0.3
V
V
V
μA
μA
V
V
V
V
−
−
MHz
pF
μs
μs
μs
Parameter
DC current transfer ratio
hFE
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
fT
Cob
ton
tstg
tf
Conditions
IC = 50μA
IC = 1mA
IE = 50μA
VCB = 100V
VEB = 5V
IC/IB = 3A/0.15A
IC/IB = 4A/0.2A
IC/IB = 3A/0.15A
IC/IB = 4A/0.2A
VCE/IC = 2V/1A
VCE/IC = 2V/3A
VCB = 10V , IE = −0.5A , f = 30MHz
VCE = 10V , IE = 0A , f = 1MHz
IC = 3A , RL = 10Ω
IB1 = −IB2 = 0.15A
VCC 30V
∗
∗
∗
∗
∗
∗ Measured using pulse current.
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/3
2009.12 - Rev.A
2SC5103
Data Sheet
Electrical characteristics curves
10
5
35mA
25mA
20mA
15mA
2
10mA
IB= 5mA
1
0
1
2
3
1
0.5
0.2
0.1
0.05
0.02
0.01
0.001
0
0.2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
TRANSITION FREQUENCY : fT(MHz)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
BASE SATURATION VOLTAGE
: VBE(sat) (V)
VBE(sat)
0.5
25°C
100°C
0.2
0.1
0.05
Ta=100°C
0.02
0.01
0.01 0.02
VCE(sat)
−25°C
0.05 0.1 0.2
25°C
0.5
1
2
5 10
tstg
0.5
tf
0.1
ton
0.05
0.02
0.01
0.05
0.1
0.2
0.5
1
2
1.2
500
1.4
5
10
COLLECTOR CURRENT : IC (A)
Fig.7 Switching characteristics
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c 2009 ROHM Co., Ltd. All rights reserved.
○
−25°C
20
10
5
2
1
0.01 0.02
1.6
100
50
20
10
5
2
1
−0.001−0.002
−0.005 −0.01 −0.02
−0.05 −0.1 −0.2
−0.5
5
Pw=100ms∗
10ms∗
1
0.5
0.2
5
10
20
50
100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area
2/3
1
2
5 10
10000
Ta=25°C
IE=0A
f=1MHz
5000
2000
1000
500
200
100
50
20
10
0.1 0.2
0.5
1
2
5
10
20
50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
DC
Tc=25°C
0.1 ∗Single
nonrepetitive
0.05 pulse
0.5
1
2
0.5
Fig.3 DC current gain vs. collector current
−1
Ic MAX (Pulse∗)
2
0.05 0.1 0.2
COLLECTOR CURRENT : IC (A)
200
10
COLLECTOR CURRENT : IC (A)
TURN ON TIME : ton (μs)
STRAGE TIME : tstg (μs)
FALL TIME
: tf (μs)
2
0.2
1.0
Fig.6 Collector output capacitance vs.
collector-base voltage
Fig.5 Gain bandwidth product vs.emitter current
IC=20 IB1= −20 IB2
PULSE
1
25°C
50
EMITTER CURRENT : IE (A)
Fig.4 Collector-emitter saturation voltage
Base-emitter saturation voltage −collector current
5
0.8
Ta=25°C
VCE=10V
COLLECTOR CURRENT : IC (A )
10
0.6
1000
Ta= −25°C
1
0.4
Fig.2 Ground emitter propagation characteristics
IC/IB=20
5
2
100
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Ground emitter output characteristics
10
Ta=100°C
200
0.005
0.002
Ta=25°C
4
5
0
2
COLLECTOR OUTPUT CAPACITWANCE : Cob(pF)
3
VCE=2V
500
DC CURRENT GAIN : hFE
30mA
4
1000
VCE= 2V
TRANSIENT THERMAL RESISTANCE : Rth(°C/W)
40mA
45mA
Ta=1
00°C
25°C
−25°C
A
m
50
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
5
10000
(1)Using infinite heat sink
(2)Unmounted
1000
(2)
100
(1)
10
1
0.1
0.01
0.001
0.01
0.1
1
10
100
1000
TIME : t (s)
Fig.9 Transient thermal resistance
2009.12 - Rev.A
2SC5103
Data Sheet
RL=10Ω
IB
VIN
IB1
IC
IB2
IB1
T.U.T.
− 30V
VCC ∼
IB2
IC
90%
IC
PW
PW=50μs
duty cycle
10%
1%
ton
−VBB
tstg
tf
Fig.10 Switching characteristic circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
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3/3
2009.12 - Rev.A
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