ROHM BD9123MUV_12

Datasheet
2.7V to 5.5V, 1.2A 1ch
Synchronous Buck Converter integrated FET
BD9123MUV
●General Description
ROHM’s high efficiency step-down switching
regulator BD9123MUV is a power supply designed to
produce a low voltage including 0.85 to 1.2 volts
from 5.5/3.3 volts power supply line. Offers high
efficiency with our original pulse skip control
technology and synchronous rectifier. Employs a
current mode control system to provide faster
transient response to sudden change in load.
●Key Specifications
 Input voltage range:
 Output voltage range:
 Output current:
 Switching frequency:
 Pch FET ON resistance:
 Nch FET ON resistance:
 Standby current:
 Operating temperature range:
●Features
■ Offers fast transient response with current mode
PWM control system.
■ Offers highly efficiency for all load range with
synchronous rectifier (Nch/Pch FET) and SLLM
(Simple Light Load Mode)
■ Incorporates output voltage inside control
function.(3 bit)
■ Incorporates PGOOD function.
■ Incorporates soft-start function.
■ Incorporates thermal protection and ULVO
functions.
■ Incorporates short-current protection circuit with
time delay function.
■ Incorporates shutdown function Icc=0µA(Typ.)
●Package
VQFN016V3030:
2.7V to 5.5V
0.85V to 1.2V
1.2A (Max.)
1MHz(Typ.)
0.35Ω(Typ.)
0.25Ω(Typ.)
0μA (Typ.)
-40℃ to +95℃
3.00mm x 3.00mm x 1.00mm
●Applications
Power supply for LSI including DSP, Micro computer
and ASIC
●Typical Application Circuit
VCC
VCC
RPG
Cin
VCC,PVCC
EN
VOUT
VID<2:0>
PGOOD
VOUT
L
VID<2:0)
ITH
SW
VOUT
GND,PGND
RITH
ESR
CITH
CO
RO
Fig.1 Typical Application Circuit
○Product structure:Silicon monolithic integrated circuit
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Datasheet
BD9123MUV
●Pin Configuration
(Top View)
VID<0> VID<1> VID<2> VOUT
>
12
11
10
9
8
ITH
7
PGOOD
15
6
GND
16
5
PGND
EN
13
VCC
14
PVCC
PVCC
(TOP VIEW)
1
2
3
4
SW
SW
SW
PGND
Fig.2 Pin Configuration
●Pin Description
Pin No.
Pin name
Function
1
2
Pch/Nch FET drain output pin
SW
3
4
Nch FET source pin
PGND
5
6
GND
7
PGOOD
8
ITH
Ground
Power Good pin
Gm Amp output pin/Connected phase
compensation capacitor
Output voltage pin
9
VOUT
10
VID<2>
Output voltage control pin<2>
11
VID<1>
Output voltage control pin<1>
12
VID<0>
Output voltage control pin<0>
13
EN
14
VCC
VCC power supply input pin
PVCC
Pch FET source pin
15
16
Enable pin(High Active)
●Block Diagram
VCC
EN
13
VCC
VREF
VID<0>
12
VID<1>
11
VID<2>
10
PVCC
15
Current
Comp
R Q
S
SELECTOR
SLOPE
CLK
Gm Amp
VOUT
OSC
9
Vcc
VCC
Current
Sense/
Protect
+
Driver
Logic
Input
10µF
16
1
100Ω
SW
4.7µH
Output
2
3
22µF
PGND
Soft
Start
UVLO
7
PGOOD
0.1µF
14
4
5
TSD
PGOOD
6
8
GND
ITH
RITH
CITH
Fig.3 Block Diagram
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Datasheet
BD9123MUV
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Ratings
Unit
Vcc
-0.3 to +7 *
1
PVcc
-0.3 to +7 *
1
EN,SW,ITH Voltage
EN, SW, ITH
-0.3 to +7
Logic input voltage
VID<2:0>
-0.3 to +7
Power Dissipation 1
Pd1
0.27 *
2
W
Power Dissipation 2
Pd2
0.62 *
3
W
W
W
VCC Voltage
PVCC Voltage
V
V
V
V
Power Dissipation 3
Pd3
1.77 *
4
Power Dissipation 4
Pd4
2.66 *
5
Operating temperature range
Topr
-40 to +95
℃
Storage temperature range
Tstg
-55 to +150
℃
Tj
+150
℃
Maximum junction temperature
*1
*2
*3
*4
*5
Pd should not be exceeded.
IC only
1-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 10.29mm2
4-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, 1st and 4th copper foil area : 10.29mm2 , 2nd and 3rd copper foil area : 5505mm2
4-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 5505mm2, in each layers
●Operating Ratings (Ta=-40 to +95℃)
Parameter
Power Supply Voltage
EN Voltage
Logic input voltage
Output voltage Setting Range
SW average output current
*6
Symbol
Ratings
Min.
Typ.
Max.
Unit
VCC
2.7
3.3
5.5
V
PVCC
2.7
3.3
5.5
V
VEN
0
-
Vcc
V
VID<2:0>
0
-
5.5
V
VOUT
0.85
-
1.2
V
ISW
-
-
1.2
*6
A
Pd should not be exceeded.
●Electrical Characteristics (Ta=25℃ VCC=PVCC=5V, EN=VCC, VID<2>=VID<1>=VID<0>= 0V), unless otherwise specified.)
Limits
Parameter
Symbol
Unit
Conditions
Min.
Typ.
Max.
Standby current
Active current
EN Low voltage
EN High voltage
EN input current
VID Low voltage
VID High voltage
VID input current
Oscillation frequency
Pch FET ON resistance
Nch FET ON resistance
Output voltage
ITH SInk current
ITH Source Current
UVLO threshold voltage
UVLO release voltage
Power Good Threshold
Power Good Release
Power Good Delay
PGOOD ON Resistance
Soft start time
Timer latch time
Output Short circuit threshold Voltage
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ISTB
ICC
VENL
VENH
IEN
VVIDL
VVIDH
IVID
FOSC
RONP
RONN
VOUT
ITHSI
ITHSO
VUVLO1
VUVLO2
VPGOOD1
VPGOOD2
TPG
RONPG
TSS
TLATCH
VSCP
2.0
2.0
0.8
0.98
25
25
2.4
2.425
70
85
2.5
0.4
1
-
3/20
0
10
300
500
GND
0.8
VCC
5
10
GND
0.8
VCC
5
10
1
1.2
0.35
0.60
0.25
0.50
1.0
1.02
50
50
2.5
2.6
2.55
2.7
75
80
90
95
5
10
140
280
0.8
1.6
2
4
VOUT×0.5 VOUT×0.7
µA
µA
V
V
µA
V
V
µA
MHz
Ω
Ω
V
µA
µA
V
V
%
%
ms
Ω
ms
ms
V
EN=GND
Standby mode
Active mode
VEN=5V
VVID=5V
PVCC=5V
PVCC=5V
VID<2:0>=(0,0,0)
VOUT =1.2V
VOUT =0.8V
VCC=5V→0V
VCC=0V→5V
VOUT→0V
0V→VOUT
VOUT→0V
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02.MAR.2012 Rev.001
Datasheet
BD9123MUV
●Typical Performance Curves
Fig.5 VEN - VOUT
Fig.4 Vcc-VouT
Fig.6 IOUT-VOUT
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Fig. 7 Ta-VOUT
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Datasheet
BD9123MUV
Fig.9 Power supply voltageOperating frequency
Fig.8 Efficiency
Fig.11 Ta-RONN,RONP
Fig.10 Ta-Fosc
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Datasheet
BD9123MUV
Fig.12 Ta-VEN
Fig.13 Ta-Icc
Fig.15 SW waveform Io=0mA
Fig.14 Soft start waveform
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Datasheet
BD9123MUV
Fig.16 SW waveform Io=1.2A
Fig.17 Transient Response
Io=125mA→850mA(2µA)
Fig.19 BIT CHANCE RESPONSE
Fig.18 Transient Response
Io=850mA→125mA(2µA)
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BD9123MUV
Fig.21 PGOOD Delay
Fig.20 BIT CHANCE RESPONSE
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Datasheet
BD9123MUV
●Application Information
Operation
BD9123MUV is a synchronous rectifying step-down switching regulator that achieves faster transient response by employing
current mode PWM control system. It utilizes switching operation in PWM (Pulse Width Modulation) mode for heavier load,
while it utilizes SLLM (Simple Light Load Mode) operation for lighter load to improve efficiency.
○Synchronous rectifier
It does not require the power to be dissipated by a rectifier externally connected to a conventional DC/DC converter IC,
and its P.N junction shoot-through protection circuit limits the shoot-through current during operation, by which the power
dissipation of the set is reduced.
○Current mode PWM control
Synthesizes a PWM control signal with a inductor current feedback loop added to the voltage feedback.
・PWM (Pulse Width Modulation) control
The oscillation frequency for PWM is 1 MHz. SET signal form OSC turns ON a Pch MOS FET (while a Nch MOS FET
is turned OFF), and an inductor current IL increases. The current comparator (Current Comp) receives two signals, a
current feedback control signal (SENSE: Voltage converted from I L) and a voltage feedback control signal (FB), and
issues a RESET signal if both input signals are identical to each other, and turns OFF the highside MOS FET (while a
lowside MOS FET is turned ON) for the rest of the fixed period. The PWM control repeats this operation.
・SLLM (Simple Light Load Mode) control
When the control mode is shifted from PWM for heavier load to the one for lighter load or vise versa, the switching pulse
is designed to turn OFF with the device held operated in normal PWM control loop, which allows linear operation
without voltage drop or deterioration in transient response during the mode switching from light load to heavy load or
vise versa.
Although the PWM control loop continues to operate with a SET signal from OSC and a RESET signal from Current
Comp, it is so designed that the RESET signal is held issued if shifted to the light load mode, with which the switching is
tuned OFF and the switching pulses are thinned out under control. Activating the switching intermittently reduces the
switching dissipation and improves the efficiency.
SENSE
Current
Comp
RESET
VOUT
R Q
Level
Shift
FB
SET
S
Gm Amp.
ITH
IL
Driver
Logic
VOUT
SW
Load
OSC
Fig.22 Diagram of current mode PWM control
PVCC
Current
Comp
SENSE
PVCC
SENSE
Current
Comp
FB
FB
SET
GND
SET
GND
RESET
GND
RESET
GND
SW
GND
SW
IL
GND
IL(AVE)
IL
0A
VOUT
VOUT(AVE)
VOUT
VOUT(AVE)
Not switching
Fig.23 PWM switching timing chart
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Fig.24 SLLM
9/20
switching timing chart
TSZ02201-0J3J0AJ00120-1-2
02.MAR.2012 Rev.001
Datasheet
BD9123MUV
Description of Operations
・Soft-start function
EN terminal shifted to “High” activates a soft-starter to gradually establish the output voltage with the current limited during
startup, by which it is possible to prevent an overshoot of output voltage and an inrush current.
The inclination of standing up is different and the soft start time is different because of constancy depending on the value
offset output voltage. When 1V settiing it, it is Tss=1msec(Typ.)
VCC,EN
1.2V
0.85V
VOUT
Tss
[ms]
Tss’
Fig.25 Soft start action
・Shutdown function
With EN terminal shifted to “Low”, the device turns to Standby Mode, and all the function blocks including reference
voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0µA(Typ.).
・UVLO function
Detects whether the input voltage sufficient to secure the output voltage of this IC is supplied.
of 50mV (Typ.) is provided to prevent output chattering.
And the hysteresis width
Hysteresis 50mV
Vcc
EN
VOUT
Tss
Soft start
Standby mode
Tss
Tss
Operating mode
UVLO
Standby
mode
Operating mode
Standby
mode
UVLO
EN
Standby mode
Operating mode
UVLO
Fig.26 Soft start, Shutdown, UVLO timing chart
・PGOOD function
When the output voltage falls below 75% (Typ.) of a set value, the PGOOD pin of Open-Drain is turned off. And the
hysteresis width of 15% (Typ.) is provided to prevent output chattering.
VOUT
90%
The hysteresis width
75%
TGP
PGOOD
Fig.27 PGOOD timing chart
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Datasheet
BD9123MUV
About Setting the Output Voltage
Output voltage shifts step by step as often as bit setting to control the overshoot/undershoot that happen when changing the
setting value of output voltage. From the bit switching until output voltage reach to setting value, 8 steps (max) delay will
occur.
(0,0,1)
VID<2:0>
(1,1,1)
1.2V
0.85V
VOUT
tVID (max)=0.06ms
ⅰ) Switching 3 bit synchronously
ⅲ) Switching the bit during counting
VID<2>
V2D〈2〉
VID<1>
〈1〉
VID<0>
〈0〉
Count STOP
Count STOP
VOUT
VOUT
About 10µs from bit switching
5µs(max)
About 10µs from bit switching
ⅱ) Switching 3 bit with the time lag
VID<2>
VID<1>
VID<0>
Count STOP
VOUT
About 10µs from switching the last bit
Fig.28 Timing chart of setting the output voltage
It is possible to set output voltage, shown the diagram 1 below, by setting VID<0> to <2> 0 or 1.
VID<2:0> terminal is set to VID<2:0>=(0,0,0) originally by the pull down resistor with high impedance inside IC.
By pulling up/ pulling down about 10kΩ, the original value is changeable optionally.
Table of output voltage setting
VID<2>
VID<1>
VID<0>
VOUT
0
0
0
1.0V
0
0
1
0.85V
0
1
0
0.9V
0
1
1
0.95V
1
0
0
1.05V
1
0
1
1.1V
1
1
0
1.15V
1
1
1
1.2V
*After 10µs(max) from the bit change, VOUT change starts.
*Requiring time for one step (50 mV shift) of VOUT is 5µs(max).
*From the bit switching until output voltage reach to setting value, tVID(max)=0.06ms delay will occur.
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Datasheet
BD9123MUV
・Short-current protection circuit with time delay function
Turns OFF the output to protect the IC from breakdown when the incorporated current limiter is activated continuously for
the fixed time (TLATCH) or more. The output thus held tuned OFF may be recovered by restarting EN or by re-unlocking
UVLO.
VCC
Output voltage OFF Latch
Output Short circuit
Threshold Voltage
VOUT
IL Limit
IL
t1<TLATCH
Output voltage
OFF
t2=TLATCH
Output voltage
OFF
Operated mode
Timer Latch
UVLO
Operated mode
UVLO
Fig.29 Short-current protection circuit with time delay timing chart
Information on Advantages
Advantage 1: Offers fast transient response with current mode control system.
Conventional product (Load response IO=0.1A→0.6A)
BD9123MUV (Load response IO=0.6A→0.1A)
VOUT
37mV
VOUT
27mV
IOUT
IOUT
Fig.30 Comparison of transient response
Advantage 2:
Offers high efficiency for all load range.
・For lighter load:
Utilizes the current mode control mode called SLLM for lighter load, which reduces various dissipation such as
switching dissipation (PSW), gate charge/discharge dissipation, ESR dissipation of output capacitor (P ESR) and
on-resistance dissipation (PRON) that may otherwise cause degradation in efficiency for lighter load.
Achieves efficiency improvement for lighter load.
・For heavier load:
Utilizes the synchronous rectifying mode and the low on-resistance MOS FETs incorporated as power transistor.
Achieves efficiency improvement for heavier load.
Offers high efficiency for all load range with the improvements mentioned above.
Efficiency η[%]
100
ON resistance of Pch side MOS FET : 0.35mΩ(Typ.)
ON resistance of Nch side MOS FET : 0.25mΩ(Typ.)
SLLM
②
50
①
PWM
①inprovement by SLLM system
②improvement by synchronous rectifier
0
0.001
0.01
0.1
Output current Io[A]
1
Fig.31 Efficiency
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Datasheet
BD9123MUV
Advantage 3:
・Supplied in smaller package due to small-sized power MOS FET incorporated.
・Output capacitor Co required for current mode control: 10µF ceramic capacitor
・Inductance L required for the operating frequency of 1 MHz: 4.7µH inductor
Reduces a mounting area required.
VCC
VCC
20mm
R PGOOD
L
Cin
Co
DC/DC
Convertor
L
VOUT
RITH
Rf
Cf
CIN
RPGOOD
15mm
Co
RITH
CITH
CITH
Fig.32 Example application
Switching Regulator Efficiency
Efficiency ŋ may be expressed by the equation shown below:
η=
VOUT×IOUT
×100[%]=
Vin×Iin
POUT
Pin
×100[%]=
POUT
POUT+PDα
×100[%]
Efficiency may be improved by reducing the switching regulator power dissipation factors PDα as follows:
Dissipation factors:
2
1) ON resistance dissipation of inductor and FET: PD(I R)
2) Gate charge/discharge dissipation: PD(Gate)
3) Switching dissipation: PD (SW)
4) ESR dissipation of capacitor: PD (ESR)
5) Operating current dissipation of IC: PD(IC)
2
2
1)
PD(I R)=IOUT ×(RCOIL+RON)
(RCOIL[Ω]: DC resistance of inductor, RON[Ω]: ON resistance of FET, IOUT[A]: Output current.)
2)
PD(Gate)=Cgs×f×V
(Cgs[F]: Gate capacitance of FET、f[H]: Switching frequency、V[V]: Gate driving voltage of FET)
3)
PD(SW)=
4)
PD(ESR)=IRMS ×ESR
(IRMS[A]: Ripple current of capacitor, ESR[Ω]: Equivalent series resistance.)
5)
PD(IC)=Vin×ICC
(ICC[A]: Circuit current.)
2
Vin ×CRSS×IOUT×f
IDRIVE
(CRSS[F]: Reverse transfer capacitance of FET, IDRIVE[A]: Peak current of gate.)
2
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Datasheet
BD9123MUV
Consideration on Permissible Dissipation and Heat Generation
As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is
needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input
voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation
must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
4 layers (Copper foil area : 5505mm2)
copper foil in each layers.
θj-a=47.0℃/W
② 4 layers (1st and 4th copper foil area : 6.28m2)
(2nd and 3rd copper foil area: 5505m2)
(copper foil in each layers)
θj-a=70.62℃/W
③ 1 layer (Copper foil area : 6.28m2)
θj-a=201.6℃/W
④ IC only.
θj-a=462.9℃/W
①
Power dissipation:Pd [W]
4.0
3.0
①2.66W
2.0
1.0
②1.77W
2
P=IOUT ×RON
RON=D×RONP+(1-D)RONN
D:ON duty (=VOUT/VCC)
RONP:ON resistance of Highside MOS FET
RONN:ON resistance of Lowside MOS FET
IOUT:Output curren
③0.62W
④0.27W
0
0
25
50
75
100 105 125
150
Ambient temperature:Ta [℃]
Fig.33 Thermal derating curve
(VQFN016V3030)
If VCC=3.3V, VOUT=1.2V, RONP=0.35mΩ, RONN=0.25mΩ
IOUT=1.2A, for example,
D=VOUT/VCC=1.2/5=0.24
RON=0.24×0.35+(1-0.24)×0.25
=0.084+0.19
=0.274[Ω]
2
P=1.2 ×0.247=0.394[W]
As RONP is greater than RONN in this IC, the dissipation increases as the ON duty becomes greater. With the consideration
on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
Selection of Components Externally Connected
1. Selection of inductor (L)
The inductance significantly depends on output ripple current. As seen
in the equation (1), the ripple current decreases as the inductor and/or
switching frequency increases.
IL
ΔIL
ΔIL=
(VCC-VOUT)×VOUT
L×VCC×f
[A]・・・(1)
VCC
Appropriate ripple current at output should be 20% more or less of the
maximum output current.
IL
ΔIL=0.3×IOUTmax. [A]・・・(2)
VOUT
(VCC-VOUT)×VOUT
L
Co
L=
ΔIL×VCC×f
[H]・・・(3)
(ΔIL: Output ripple current, and f: Switching frequency)
Fig.34Output ripple current
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Datasheet
BD9123MUV
※Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases
efficiency. The inductor must be selected allowing sufficient margin with which the peak current may not exceed its
current rating.
If
VCC=5.0V, VOUT=1.2V, f=1MHz, ΔIL=0.3×1.2A=0.36A, for example,
(5-1.2)×1.2
L=
0.6×5×1M
=2.53µ → 4.7 [µH]
※Select the inductor of low resistance component (such as DCR and ACR) to minimize dissipation in the inductor for
better efficiency.
2. Selection of output capacitor (CO)
Output capacitor should be selected with the consideration on the
stability region and the equivalent series resistance required to smooth
ripple voltage.
VCC
Output ripple voltage is determined by the equation (4):
ΔVOUT=ΔIL×ESR [V]・・・(4)
(ΔIL: Output ripple current, ESR: Equivalent series resistance of
output capacitor)
VOUT
L
ESR
Co
※ Rating of the capacitor should be determined allowing sufficient
margin against output voltage. A 10µF to 100µF ceramic capacitor is
recommended.
Fig.35 Output capacitor
Less ESR allows reduction in output ripple voltage.
3. Selection of input capacitor (Cin)
Input capacitor to select must be a low ESR capacitor of the capacitance
sufficient to cope with high ripple current to prevent high transient voltage.
The ripple current IRMS is given by the equation (5):
VCC
Cin
IRMS=IOUT×
VOUT
L
Co
Fig.36 Input capacitor
√VOUT(VCC-VOUT)
VCC
[A]・・・(5)
< Worst case > IRMS(max.)
IOUT
When Vcc=2×VOUT, IRMS=
2
IRMS=
If VCC=5V, VOUT=1.2V, and IOUTmax.=1.2A,
√1.2(5-1.2)
IRMS=1.2×
=0.51 [ARMS]
5
A low ESR 10µF/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better efficiency.
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4. Determination of RITH, CITH that works as a phase compensator
As the Current Mode Control is designed to limit a inductor current, a pole (phase lag) appears in the low frequency area
due to a CR filter consisting of a output capacitor and a load resistance, while a zero (phase lead) appears in the high
frequency area due to the output capacitor and its ESR. So, the phases are easily compensated by adding a zero to the
power amplifier output with C and R as described below to cancel a pole at the power amplifier.
fp(Min.)
fp=
A
Gain
[dB]
fp(Max.)
Phase
[deg]
2π×RO×CO
1
fz(ESR)= 2π×ESR×CO
0
fz(ESR)
IOUTMin.
1
IOUTMax.
Pole at power amplifier
When the output current decreases, the load resistance Ro
increases and the pole frequency lowers.
0
-90
fp(Min.)=
1
[Hz]←with lighter load
2π×ROMax.×CO
fp(Max.)=
1
2π×ROMin.×CO
Fig.37 Open loop gain characteristics
A
[Hz]←with heavier load
Zero at power amplifier
Increasing capacitance of the output capacitor lowers the
pole frequency while the zero frequency does not change.
(This is because when the capacitance is doubled, the
capacitor ESR reduces to half.)
fz(Amp.)
Gain
[dB]
0
fz(Amp.)=
0
1
2π×RITH.×CITH
Phase
[deg]
-90
Fig.38 Error amp phase compensation characteristics
VCC
RPG
Cin
VCC
EN
VOUT
VID<2:0>
VCC,PVCC
PGOOD
VOUT
L
VID<2:0)
ITH
SW
VOUT
GND,PGND
RITH
ESR
CITH
CO
RO
Fig.39 Typical application
Stable feedback loop may be achieved by canceling the pole fp (Min.) produced by the output capacitor and the load
resistance with CR zero correction by the error amplifier.
fz(Amp.)= fp(Min.)
1
2π×RITH×CITH
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2π×ROMax.×CO
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Datasheet
BD9123MUV
Cautions on PC Board Layout
Fig.40 Layout diagram
①
②
Lay out the input ceramic capacitor CIN closer to the pins PVCC and PGND, and the output capacitor Co closer to the
pin PGND.
Lay out CITH and RITH between the pins ITH and GND as neat as possible with least necessary wiring.
※VQFN016V3030 has thermal PAD on the reverse of the package.
The package thermal performance may be enhanced by bonding the PAD to GND plane which take a large area of
PCB.
Recommended Components Lists on Above Application
Recommended components Lists
Symbol
Value
Manufacturer
Coil
4.7uH
TDK
VLF5014S-4R7M1R7
CIN
Ceramic capacitor
10uF
KYOCERA
CM316X5R106M10A
CO
Ceramic capacitor
22uF
KYOCERA
CM316B226M06A
CITH
Ceramic capacitor
1500pF
murata
GRM18 Series
RITH
Resistance
9.1kΩ
ROHM
MCR03 Series
Cf
Ceramic capacitor
0.1uF
murata
GRM18 Series
Rf
Resistance
100Ω
ROHM
MCR03 Series
L
Part
Series
※The parts list presented above is an example of recommended parts. Although the parts are sound, actual circuit
characteristics should be checked on your application carefully before use. Be sure to allow sufficient margins to
accommodate variations between external devices and this IC when employing the depicted circuit with other circuit
constants modified. Both static and transient characteristics should be considered in establishing these margins. When
switching noise is substantial and may impact the system, a low pass filter should be inserted between the VCC and
PVCC pins, and a schottky barrier diode or snubber established between the SW and PGND pins.
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Datasheet
BD9123MUV
●I/O Equivalence Circuit
【BD9123MUV】
・EN pin
・SW pin
PVCC
EN
PVCC
PVCC
SW
・VOUT pin
・ITH pin
VCC
PGOOD
・PGOOD
VOUT
ITH
・VID〈2:0〉 pin
VID〈2:0〉
Fig.41 I/O equivalence circuit
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Datasheet
BD9123MUV
●Operational Notes
1. Absolute Maximum Ratings
While utmost care is taken to quality control of this product, any application that may exceed some of the absolute
maximum ratings including the voltage applied and the operating temperature range may result in breakage. If broken,
short-mode or open-mode may not be identified. So if it is expected to encounter with special mode that may exceed the
absolute maximum ratings, it is requested to take necessary safety measures physically including insertion of fuses.
2. Electrical potential at GND
GND must be designed to have the lowest electrical potential In any operating conditions.
3. Short-circuiting between terminals, and mismounting
When mounting to pc board, care must be taken to avoid mistake in its orientation and alignment. Failure to do so may
result in IC breakdown. Short-circuiting due to foreign matters entered between output terminals, or between output and
power supply or GND may also cause breakdown.
4. Thermal shutdown protection circuit
Thermal shutdown protection circuit is the circuit designed to isolate the IC from thermal runaway, and not intended to
protect and guarantee the IC. So, the IC the thermal shutdown protection circuit of which is once activated should not be
used thereafter for any operation originally intended.
5. Inspection with the IC set to a pc board
If a capacitor must be connected to the pin of lower impedance during inspection with the IC set to a pc board, the
capacitor must be discharged after each process to avoid stress to the IC. For electrostatic protection, provide proper
grounding to assembling processes with special care taken in handling and storage. When connecting to jigs in the
inspection process, be sure to turn OFF the power supply before it is connected and removed.
6. Input to IC terminals
+
This is a monolithic IC with P isolation between P-substrate and each element as illustrated below. This P-layer and the
N-layer of each element form a P-N junction, and various parasitic elements are formed.
If a resistor is joined to a transistor terminal as shown in Fig 42.
○P-N junction works as a parasitic diode if the following relationship is satisfied; GND>Terminal A (at resistor side), or
GND>Terminal B (at transistor side); and
○if GND>Terminal B (at NPN transistor side),
a parasitic NPN transistor is activated by N-layer of other element adjacent to the above-mentioned parasitic diode.
The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits,
and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such
manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in
activation of parasitic elements.
Resistor
Transistor (NPN)
Pin A
Pin B
C
Pin B
B
Pin A
N
P+
N
P+
P
E
N
N
Parasitic
element
P+
GND
B
P
P+
C
N
E
Parasitic
element
P substrate
P substrate
Parasitic element
N
Parasitic element
GND
GND
GND
Other adjacent elements
Fig.42 Simplified structure of monorisic IC
7. Ground wiring pattern
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND
pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that
resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the
small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.
8. Selection of inductor
It is recommended to use an inductor with a series resistance element (DCR) 50mΩ or less. Especially, in case output
voltage is set 1.6V or more, note that use of a high DCR inductor will cause an inductor loss, resulting in decreased output
voltage. Should this condition continue for a specified period (soft start time + timer latch time), output short circuit
protection will be activated and output will be latched OFF. When using an inductor over 50mΩ, be careful to ensure
adequate margins for variation between external devices and this IC, including transient as well as static characteristics.
Furthermore, in any case, it is recommended to start up the output with EN after supply voltage is within operation range.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
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Datasheet
BD9123MUV
●Ordering Information
B
D
9
1
2
3
M
U
V
-
Package
MUV : VQFN016V3030
E2
Packaging and forming specification
E2: Embossed tape and reel
●Physical Dimension Tape and Reel Information
●Marking Diagram
VQFN016V3030 (TOP VIEW)
Part Number Marking
D 9 1
2
LOT Number
3
1PIN MARK
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Datasheet
Notice
●Precaution for circuit design
1) The products are designed and produced for application in ordinary electronic equipment (AV equipment, OA
equipment, telecommunication equipment, home appliances, amusement equipment, etc.). If the products are to be
used in devices requiring extremely high reliability (medical equipment, transport equipment, aircraft/spacecraft,
nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose
malfunction or operational error may endanger human life and sufficient fail-safe measures, please consult with the
ROHM sales staff in advance. If product malfunctions may result in serious damage, including that to human life,
sufficient fail-safe measures must be taken, including the following:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits in the case of single-circuit failure
2)
The products are designed for use in a standard environment and not in any special environments. Application of the
products in a special environment can deteriorate product performance. Accordingly, verification and confirmation of
product performance, prior to use, is recommended if used under the following conditions:
[a] Use in various types of liquid, including water, oils, chemicals, and organic solvents
[b] Use outdoors where the products are exposed to direct sunlight, or in dusty places
[c] Use in places where the products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2,
and NO2
[d] Use in places where the products are exposed to static electricity or electromagnetic waves
[e] Use in proximity to heat-producing components, plastic cords, or other flammable items
[f] Use involving sealing or coating the products with resin or other coating materials
[g] Use involving unclean solder or use of water or water-soluble cleaning agents for cleaning after soldering
[h] Use of the products in places subject to dew condensation
3)
The products are not radiation resistant.
4)
Verification and confirmation of performance characteristics of products, after on-board mounting, is advised.
5)
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse) is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
6)
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta).
When used in sealed area, confirm the actual ambient temperature.
7)
Confirm that operation temperature is within the specified range described in product specification.
8)
Failure induced under deviant condition from what defined in the product specification cannot be guaranteed.
●Precaution for Mounting / Circuit board design
1) When a highly active halogenous (chlorine, bromine, etc.) flux is used, the remainder of flux may negatively affect
product performance and reliability.
2)
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
Company in advance.
Regarding Precaution for Mounting / Circuit board design, please specially refer to ROHM Mounting specification
●Precautions Regarding Application Examples and External Circuits
1) If change is made to the constant of an external circuit, allow a sufficient margin due to variations of the characteristics
of the products and external components, including transient characteristics, as well as static characteristics.
2)
The application examples, their constants, and other types of information contained herein are applicable only when
the products are used in accordance with standard methods. Therefore, if mass production is intended, sufficient
consideration to external conditions must be made.
Notice - Rev.001
Datasheet
●Precaution for Electrostatic
This product is Electrostatic sensitive product, which may be damaged due to Electrostatic discharge. Please take proper
caution during manufacturing and storing so that voltage exceeding Product maximum rating won't be applied to products.
Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from
charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
●Precaution for Storage / Transportation
1) Product performance and soldered connections may deteriorate if the products are stored in the following places:
[a] Where the products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] Where the temperature or humidity exceeds those recommended by the Company
[c] Storage in direct sunshine or condensation
[d] Storage in high Electrostatic
2)
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using products of which storage time is
exceeding recommended storage time period .
3)
Store / transport cartons in the correct direction, which is indicated on a carton as a symbol. Otherwise bent leads may
occur due to excessive stress applied when dropping of a carton.
4)
Use products within the specified time after opening a dry bag.
●Precaution for product label
QR code printed on ROHM product label is only for internal use, and please do not use at customer site. It might contain a
internal part number that is inconsistent with an product part number.
●Precaution for disposition
When disposing products please dispose them properly with a industry waste company.
●Precaution for Foreign exchange and Foreign trade act
Since concerned goods might be fallen under controlled goods prescribed by Foreign exchange and Foreign trade act,
please consult with ROHM in case of export.
●Prohibitions Regarding Industrial Property
1) Information and data on products, including application examples, contained in these specifications are simply for
reference; the Company does not guarantee any industrial property rights, intellectual property rights, or any other
rights of a third party regarding this information or data. Accordingly, the Company does not bear any responsibility for:
[a] infringement of the intellectual property rights of a third party
[b] any problems incurred by the use of the products listed herein.
2)
The Company prohibits the purchaser of its products to exercise or use the intellectual property rights, industrial
property rights, or any other rights that either belong to or are controlled by the Company, other than the right to use,
sell, or dispose of the products.
Notice - Rev.001