KSD1047 KSD1047 Audio Power Amplifier DC to DC Converter • High Current Capability • High Power Dissipation • Complement to KSB817 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 160 Units V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 8 A ICP *Collector Current (Pulse) 16 A PC Collector Dissipation (TC=25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 40 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 5mA, IE = 0 Min. 160 BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, RBE =∞ 140 BVEBO Emitter-Base Breakdown Voltage IE = 5mA, IC = 0 ICBO Collector Cut-off Current VCB = 80V, IE = 0 Typ. Max. Units V V 6 V 0.1 mA 0.1 mA IEBO Emitter Cut-off Current VEB = 4V, IC = 0 hFE1 * DC Current Gain VCE = 5V, IC = 1A 60 hFE2 DC Current Gain VCE = 5V, IC = 6A 20 VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 0.5A 2.5 V VBE(on) Base-Emitter ON Voltage VCE = 5V, IC = 1A 1.5 V 200 fT Current Gain Bandwidth Product VCE = 5V, IC = 1A 15 MHz Cob Output Capacitance VCB = 10V, f = 1MHz 210 pF tON Turn ON Time 0.26 µs tF Fall Time 0.68 µs tSTG Storage Time VCC = 20V IC = 1A = 10IB1 = -10IB2 RL = 20Ω 6.88 µs * Pulse test: PW=20µs * hFE Classificntion Classification O Y hFE1 60 ~ 120 100 ~ 200 ©2000 Fairchild Semiconductor International Rev. B, November 2000 KSD1047 Typical Characteristics IC[mA], COLLECTOR CURRENT 10 1000 IB = 240mA IB = 200mA IB = 160mA 8 VCE = 5V hFE, DC CURRENT GAIN IB = 120mA IB = 80mA 6 IB = 40mA 4 IB = 20mA 2 IB = 0 0 0 10 20 30 40 100 10 1 0.1 50 1 10 Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 IC = 10IB 1 VBE(sat)[V], SATURATION VOLTAGE VCE(sat)[V], SATURATION VOLTAGE IC = 10IB V BE(sat) VCE(sat) 0.1 0.01 0.1 1 1 0.1 0.1 10 IC[A], COLLECTOR CURRENT VCE = 5V IC[A], COLLECTOR CURRENT 7 6 5 4 3 2 1 0.4 0.6 0.8 1.0 1.2 1.4 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2000 Fairchild Semiconductor International 10 1.6 Figure 4. Base-Emitter Saturation Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 8 0.2 1 IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage 0 0.0 100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 100 VCE = 5V 10 1 0.1 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. B, November 2000 KSD1047 Typical Characteristics (Continued) 1000 100 f = 1MHz 10 0 s 1 0.1 VCEO MAX IC[A], COLLECTOR CURRENT m DC s 100 IC MAX. (DC) m 10 Cob[pF], CAPACITANCE IC MAX. (Pulse) 10 *SINGLE NONREPETITIVE o PULSE TC =25[ C] 10 1 10 100 0.01 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Collector Output Capacitance Figure 8. Safe Operating Area 140 PC[W], POWER DISSIPATION 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 9. Collector Output Capacitance ©2000 Fairchild Semiconductor International Rev. B, November 2000 KSD1047 Package Demensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. B, November 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E