KSD794/794A KSD794/794A Audio Frequency Power Amplifier • Complement to KSB744/KSB744A TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector- Base Voltage Parameter Value 70 Units V VCEO Collector-Emitter Voltage 45 60 V V VEBO IC Emitter- Base Voltage 5 V Collector Current (DC) 3 ICP A *Collector Current (Pulse) 5 A : KSD794 : KSD794A IB Base Current (DC) PC Collector Dissipation (Ta=25°C) 0.6 A 1 W PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = 45V, IE = 0 Min. Typ. Max. 1 Units µA 30 60 70 100 1 µA 320 IEBO Emitter Cut-off Current VEB = 3V, IC = 0 hFE1 hFE2 * DC Current Gain VCE = 5V, IC = 20mA VCE = 5V, IC = 0.5A VCE(Sat) * Collector-Emitter Saturation Voltage IC =1.5A, IB = 0.15A 0.3 2 VBE(Sat) * Base-Emitter Saturation Voltage IC =1.5A, IB = 0.15A 0.8 2 fT Current Gain Bandwidth Product VCE = 5V, IE = 0.1A 60 MHz Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 40 pF V V * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classificntion Classification R O Y hFE2 60 ~ 120 100 ~ 200 160 ~ 320 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSD794/794A Typical Characteristics 2.0 1000 VCE = 5V 1.6 1.2 IB = 18mA IB = 16mA IB = 14mA IB = 12mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 20mA IB = 10mA IB = 8mA 0.8 IB = 6mA IB = 4mA 0.4 100 IB = 2mA 10 20 30 40 10 1E-3 50 0.01 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 Figure 2. DC current Gain 10 1000 IE=0 f=1MHz IC = 10 IB V BE(sat) 0.1 VCE (sat) 0.01 1E-3 0.01 0.1 1 100 10 10 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 10 1000 IC(Pulse) MAX. VCE = 5V 1 atio nL imit 1m s 10 0 us s DC ed m Li ite d 0.1 D794 10 Dis sip 10m b S/ IC[A], COLLECTOR CURRENT 100 PW = IC(DC) MAX. VCEO MAX. 1 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT 0.1 D794A 0.0 0 0.01 1 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2001 Fairchild Semiconductor Corporation 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A1, June 2001 KSD794/794A 160 16 140 14 PC[W], POWER DISSIPATION dT(%), IC DERATING Typical Characteristics (Continued) 120 100 S/b 80 Di 60 ss 40 ip at ion 20 L im Li m it e d ite d 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 7. Derating Curve Of Safe Operating Areas ©2001 Fairchild Semiconductor Corporation 10 8 6 4 2 0 0 12 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A1, June 2001 KSD794/794A Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3