KSD1691 KSD1691 Feature • Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W (Ta=25°C) • Complementary to KSB1151 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 8 A IB Base Current (DC) PC Collector Dissipation (Ta=25°C) PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C 60 V 7 V 1 A 1.3 W * PW≤10ms, duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = 50V, IE = 0 IEBO Emitter Cut-off Current VEB = 7V, IC = 0 hFE1 hFE2 hFE3 *DC Current Gain VCE = 1V, IC = 0.1A VCE = 1V, IC = 2A VCE = 1V, IC = 5A Min. Typ. 60 100 50 Max. 10 Units µA 10 µA 400 VCE(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.1 0.3 VBE(sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.9 1.2 V V tON Turn ON Time 0.2 1 µs tSTG Storage Time 1.1 2.5 µs tF Fall Time VCC = 10V, IC = 2A IB1 = - IB2 = 0.2A RL = 5Ω 0.2 1 µs * Pulse test: PW≤50µs, duty Cycle≤2% Pulsed hFE Classificntion Classification O Y G hFE 2 100 ~ 200 160 ~ 320 200 ~ 400 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1691 Typical Characteristics 1000 8 00m IB = 1 VCE = 2V A IB = 80mA 6 hFE, DC CURRENT GAIN IB = 20 IB = 0mA 15 0m A Ic[A], COLLECTOR CURRENT 10 IB = 60mA 0 mA IB = 4 A 0m 3 = IB IB = 20mA 4 IB = 10mA 2 10 IB = 0 1 0.01 0 0.4 0.8 1.2 1.6 V CE = 1V 100 2.0 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 10 Figure 2. DC current Gain 10 10 Ic = 10 IB ite 1 d b s/ ite m Li V CE VCEO(MAX) d t) S m (s a 10 pa si m S Li 0m o n ti 0.1 is V BE(sat) 1 2m S Ic(DC)MAX D IC[A], COLLECTOR CURRENT Ic(Pulse)MAX 20 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 IC[A], COLLECTOR CURRENT 0.1 0.01 0.1 1 1 10 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Forward Bias Safe Operating Area 160 10 dT[%], Ic DERATING 120 6 4 VCEO(SUS) IC[A], COLLECTOR CURRENT 140 8 2 100 80 s/b 60 DI 40 LIM ITE D SS IP A TI O 20 0 N LI M IT ED 0 20 40 60 80 100 V CE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Reverse Bias Safe Operating Area ©2000 Fairchild Semiconductor International 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 6. Derating Curve of Safe Operating Areas Rev. A, February 2000 KSD1691 Typical Characteristics (Continued) 30 PC[W], POWER DISSIPATION 25 20 15 10 5 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1691 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E