Digital transistors (built-in resistors) DTD123YK zDimensions (Unit : mm) 2.9 DTD123YK 1.1 0.4 0.8 (3) (2) (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 0.3Min. zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also 3) have the advantage of almost completely eliminating parasitic effects. 4) Only the on / off conditions need to be set for operation, making the device design easy. 1.6 2.8 zApplications Inverter, Interface, Driver (1) GND (2) IN (3) OUT Each lead has same dimensions Abbriviated symbol : F62 zInner circuit zStructure NPN epitaxial planar silicon transistor (Resistor built-in type) OUT R1 IN R2 zPackage specifications Part No. GND Package SMT3 Packaging type Taping Code T146 Basic ordering unit (pieces) 3000 OUT IN GND R1=2.2kΩ, R2=10kΩ DTD123YK zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits DTD123YK Unit Supply voltage VCC 50 Input voltage VIN −5 to +12 V Output current IC 500 mA Power dissipation PD 200 mW Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ V 1/2 2009.05 - Rev.C DTD123YK Data Sheet zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current Symbol Min. Typ. Max. VI(off) − − 0.3 VI(on) 2 − − VO(on) − 0.1 0.3 V Unit Conditions VCC=5V, IO=100µA V VO=0.3V, IO=20mA IO/II=50mA/2.5mA II − − 3.6 mA VI=5V IO(off) − − 0.5 µA VCC=50V, VI=0V VO=5V, IO=50mA GI 56 − − − Input resistance R1 1.54 2.2 2.86 kΩ − Resistance ratio R2/R1 3.6 4.5 5.5 − − − 200 − MHz DC current gain fT ∗ Transition frequency ∗ Characteristics of built-in transistor VCE=10V, IE= −50mA, f=100MHz zElectrical characteristics curves 100 10m VO=0.3V 10 2 Ta= −40 C 25 C 100 C 1 500m 2m 1m 500µ 100µ 50µ 20µ 10µ 5µ 2µ 100m 500 µ 1m 1µ 0 5m 10m 20m 50m100m 200m 500m 1 200 VO=5V Ta=100 C 25 C −40 C 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) Ta=100 C 25 C −40 C 200µ 200m 2m DC CURRENT GAIN : GI OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 500 20 5 1k VCC=5V 5m 50 Fig.2 Output current vs. input voltage (OFF characteristics) 1 500 µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m Ta=100 C 25 C −40 C 100m 50m 20m 10m 5m 2m 1m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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