-100mA / -50V Digital transistors (with built-in resistor) DTA114GUA / DTA114GKA Applications Inverter, Interface, Driver Dimensions (Unit : mm) DTA114GUA 2.0 0.9 0.2 0.3 Features 1)The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2)Only the on / off conditions need to be set for operation, making the device design easy. 3)Higher mounting densities can be achieved. 0.7 2.1 1.25 (3) 0.65 0.65 0.15 1.3 ROHM : UMT3 EIAJ : SC-70 0.1Min. (1) (2) (1) Emitter (2) Base (3) Collector Each lead has same dimensions Abbreviated symbol : K14 Structure PNP epitaxial planar silicon transistor (Resistor built-in type) DTA114GKA 2.9 1.1 0.4 0.8 (3) 1.6 2.8 Packaging specifications (2) 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 www.rohm.com Each lead has same dimensions Inner circuit Unit Symbol Limits V VCBO −50 −50 V VCEO −5 V VEBO IC −100 mA mW Pc 200 150 °C Tj Tstg −55 to +150 °C c 2009 ROHM Co., Ltd. All rights reserved. ○ (1) Emitter (2) Base (3) Collector Abbreviated symbol : K14 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature (1) 0.95 0.95 0.3Min. Package UMT3 SMT3 Packaging type Taping Taping T146 T106 Code Part No. Basic ordering unit (pieces) 3000 3000 DTA114GUA − DTA114GKA − C B R E E : Emitter C : Collector B : Base R=10kΩ 1/2 2009.06 - Rev.B DTA114GUA / DTA114GKA Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. − BVCBO −50 Collector-base breakdown voltage − Collector-emitter breakdown voltage BVCEO −50 −5 − BVEBO Emitter-base breakdown voltage − − ICBO Collector cutoff current −300 − IEBO Emitter cutoff current − − Collector-emitter saturation voltage VCE(sat) − hFE 30 DC current transfer ratio 10 R1 7 Emitter-base resistance − 250 fT ∗ Transition frequency Max. Unit Conditions − V IC= −50μA − V IC= −1mA − V IE= −720μA −0.5 μA VCB= −50V −580 μA VEB= −4V −0.3 V IC= −10mA, IB= −0.5mA − IC= −5mA, VCE= −5V − − 13 kΩ − MHz VCE= −10V, IE=50mA, f=100MHz ∗ Characteristics of built-in transistor DC CURRENT GAIN : hFE Ta=25˚C 500 VO=5V 200 100 50 20 10 5 2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : Ic (mA) Fig.1 DC Current gain vs. Collector Current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ COLLECTOR SATURATION VOLTAGE: VCE (sat)(mV) Electrical characteristic curves 1000 Ta=25˚C 500 200 IC / IB=20 / 1 100 50 IC / IB=10 / 1 20 10 1 2 5 10 20 50 100 COLLECTOR CURRENT : VDS (V) Fig.2 Collector-emitter saturation voltage vs. Collector Current 2/2 2009.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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