500mA / 50V Digital transistors (with built-in resistors) DTD123EK Applications Inverter, Interface, Driver Dimensions (Unit : mm) DTD123EK Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on / off conditions need to be set for operation, making the device design easy. 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2) 0.15 1.9 (1) GND (2) IN (3) OUT Each lead has same dimension ROHM : SMT3 EIAJ : SC-59 Structure NPN epitaxial planar silicon transistor (Resistor built-in type) 0.3Min. (1) 0.95 0.95 Abbreviated symbol: F22 Packaging specifications Inner circuit Package SMT3 Packaging type Taping Code T146 Basic ordering unit (pieces) 3000 OUT R1 IN R2 Part No. GND DTD123EK OUT IN Absolute maximum ratings (Ta=25C) Parameter Symbol Limits DTD123EK GND Unit Supply voltage VCC 50 Input voltage VIN −10 to +12 V Output current IC 500 mA Power dissipation Pd 200 mW Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ R1=R2=2.2kΩ V 1/2 2009.06 - Rev.C DTD123EK Data Sheet Electrical characteristics (Ta=25C) Parameter Input voltage Output voltage Input current Output current Symbol Min. Typ. Max. VI(off) − − 0.5 Unit Conditions VI(on) 3 − − VO(on) − 0.1 0.3 V II − − 3.8 mA VI=5V IO(off) − − 0.5 μA VCC=50V, VI=0V VO=5V, IO=50mA VCC=5V, IO=100μA V VO=0.3V, IO=20mA IO/II=50mA/2.5mA DC current gain GI 39 − − − Input resistance R1 1.54 2.2 2.86 kΩ − Resistance ratio R2/R1 0.8 1 1.2 − − − 200 − MHz fT ∗ Transition frequency VCE=10V, IE= −50mA, f=100MHz ∗Characteristics of built-in transistor. Electrical characteristic curves 10m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 20 10 5 Ta= −40 C 25 C 100 C 2 1 500m Ta=100 C 25 C 2m −40 C 1m 200μ 100μ 50μ 20μ 10μ 2μ 1μ 5m 10m 20m 50m 100m 200m 500m Fig.1 Input voltage vs. output current (ON characteristics) 1 Ta=100 C 25 C −40 C 200 100 50 20 10 5 5μ 100m 500 μ 1m 2m VO=5V 500 500μ 200m OUTPUT CURRENT : IO (A) 1k VCC=5V 5m 50 DC CURRENT GAIN : GI 100 2 0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 500μ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m 100m Ta=100 C 25 C −40 C 50m 20m 10m 5m 2m 1m 500μ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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