-100mA / -50V Digital transistors (with built-in resistors) DTA143XEB zDimensions (Unit : mm) zApplications Inverter, Interface, Driver EMT3F 1.6 0.7 (3) (1) 0.5 0.5 1.0 0.45 0.37 1.6 0.86 0.37 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. 0.45 0.26 (2) (1) IN (2) GND (3) OUT 0.13 Each lead has same dimensions Abbreviated symbol : 33 zInner circuit zStructure PNP silicon epitaxial planar transistor type (Resistor built-in) OUT R1 IN R2 zPackaging specifications GND(+) Package EMT3F Packaging type Taping Part No. OUT IN TL Code GND(+) 3000 Basic ordering unit (pieces) DTA143XEB R1=4.7kΩ, R2=10kΩ zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit V Supply voltage VCC −50 Input voltage VIN −20 to +7 V −100 mA Collector current Ic(max) Output current Io Power dissipation PD ∗1 ∗2 −100 mA 150 mW Junction temperature Tj 150 °C Range of storage temperature Tstg −55 to +150 °C ∗1 Characteristics of built-in transistor ∗2 Each terminal mounted on a recommended land www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.07 - Rev.B DTA143XEB Data Sheet zElectrical characteristic curves OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(on) (V) −20 −10 Ta=−40°C 25°C 100°C −5 −2 −1 −500m −200m −100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (V) −1 −2m −1m −500µ Ta=100°C −200µ 25°C −100µ −50µ −40°C −20µ −10µ −5µ −2µ −1µ 1k VCC=−5V VO=−5V 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (V) Fig.3 DC current gain vs. output current IO/II=20 −500m OUTPUT VOLTAGE : VO(on) (V) −10m −5m VO=−0.3V −50 DC CURRENT GAIN : GI −100 −200m −100m −50m Ta=100°C 25°C −40°C −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (V) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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