ROHM IMH10AT110

General purpose (dual digital transistors)
EMH10 / UMH10N
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
Dimensions (Unit : mm)
0.22
Features
1) Two DTC123J chips in a EMT or UMT package.
2) Mounting possible with EMT3 or UMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating interference.
4) Mounting cost and area can be cut in half.
(3)
(4)
(5)
(2)
1.2
1.6
(1)
0.5
0.13
(6)
0.5 0.5
1.0
1.6
EMH10
Each lead has same dimensions
Abbreviated symbol : H10
ROHM : EMT6
Packaging specifications
Taping
1.25
−
Absolute maximum ratings (Ta=25C)
Limits
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
Power
dissipation
EMH10,UMH10N
12
IO
100
mA
100
mA
Pd
ROHM : UMT6
EIAJ : SC-88
V
−5
IC (Max.)
Output current
2.0
1.3
0.7
Each lead has same dimensions
Symbol
Parameter
0to0.1
0.1Min.
0.9
2.1
0.15
UMH10N
(3)
(6)
−
0.65
3000
(2)
8000
EMH10
(1)
Basic ordering unit (pieces)
UMH10N
0.65
TN
(4)
T2R
(5)
Type
Code
0.2
Package
150 (TOTAL)
mW
Abbreviated symbol : H10
Equivalent circuit
EMH10 / UMH10N
(3) (2) (1)
R1 R2
∗
DTr1
DTr2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
R2 R1
(4) (5)
(6)
R1=2.2kΩ
R2=47kΩ
∗ 120mW per element must not be exceeded.
Electrical characteristics (Ta=25C)
Parameter
Input voltage
Output voltage
Symbol
Min.
Typ.
Max.
VI (off)
−
−
0.5
Unit
VI (on)
1.1
−
−
VO (on)
−
0.1
0.3
V
V
Conditions
VCC=5V, IO=100μA
VO=0.3V, IO=5mA
IO/II=5mA/0.25mA
II
−
−
3.6
mA
VI=5V
IO (off)
−
−
0.5
μA
VCC=50V, VI=0V
DC current gain
GI
80
−
−
−
VO=5V, IO=10mA
Transition frequency
fT
−
250
−
MHz
Input resistance
R1
1.54
2.2
2.86
kΩ
−
Resistance ratio
R2/R1
17
21
26
−
−
Input current
Output current
VCE=10V, IE= −5mA, f=100MHz
∗
∗ Transition frequency of the device
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c 2012 ROHM Co., Ltd. All rights reserved.
○
1/2
2012.05 - Rev.B
EMH10 / UMH10N
Data Sheet
Electrical characteristic curves
100
10m
VO=0.3V
VO=5V
500
20
10
5
Ta=−40°C
25°C
100°C
2
1
500m
200m
2m
DC CURRENT GAIN : GI
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI (on) (V)
1k
VCC=5V
5m
50
1m
500μ
Ta=100°C
25°C
−40°C
200μ
100μ
50μ
20μ
10μ
500μ 1m
2m
5m 10m 20m
50m100m
OUTPUT CURRENT : IO (A)
1
50
20
10
5
2
1μ
0
0.5
1.0
1.5
2.0
2.5
3.0
INPUT VOLTAGE : VI (off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
100
Ta=100°C
25°C
−40°C
5μ
2μ
100m
100μ 200μ
200
Fig.2 Output current vs. input voltage
(OFF characteristics)
1
100μ 200μ 500μ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
lO/lI=20
OUTPUT VOLTAGE : VO (on) (V)
500m
Ta=100°C
25°C
−40°C
200m
100m
50m
20m
10m
5m
2m
1m
100μ 200μ
500μ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
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c 2012 ROHM Co., Ltd. All rights reserved.
○
2/2
2012.05 - Rev.B
Notice
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A