SPICE MODEL: DMN5L06DMK DMN5L06DMK Lead-free Green NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · · · Dual N-Channel MOSFET SOT-26 Low On-Resistance A Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 Low Input/Output Leakage C 2.70 3.00 2.80 Ultra-Small Surface Mount Package D ¾ ¾ 0.95 Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed B C Lead Free By Design/RoHS Compliant (Note 2) H ESD Protected Up To 2kV K "Green" Device (Note 4) M Qualified to AEC-Q101 standards for High Reliability J D F L F ¾ ¾ 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 Mechanical Data M 0.10 0.20 0.15 · · Case: SOT-26 a 0° 8° ¾ · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Marking: See Page 2 All Dimensions in mm Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 D2 G1 S1 S2 G2 D1 Terminal Connections: See Diagram Terminals: Finish ¾ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 ESD protected up to 2kV Ordering & Date Code Information: See Page 2 Weight: 0.015 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed (Note 3) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: Symbol Value Units VDSS 50 V VGSS ±20 V ID 305 800 mA Pd 225 mW RqJA 556 °C/W Tj, TSTG -65 to +150 °C 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width £10mS, Duty Cycle £1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30927 Rev. 2 - 2 1 of 5 www.diodes.com DMN5L06DMK ã Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 50 ¾ ¾ V VGS = 0V, ID = 10mA IDSS ¾ ¾ 60 nA VDS = 50V, VGS = 0V µA nA nA VGS = ±12V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V V VDS = VGS, ID = 250mA W VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C IGSS ¾ ¾ 1 500 50 VGS(th) 0.49 ¾ 1.2 RDS (ON) ¾ ¾ ¾ ¾ ¾ ¾ Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance 3.0 2.5 2.0 ID(ON) 0.5 1.4 ¾ A Forward Transconductance |Yfs| 200 ¾ ¾ mS Source-Drain Diode Forward Voltage VSD 0.5 ¾ 1.4 V Input Capacitance Ciss ¾ ¾ 50 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 5.0 pF On-State Drain Current VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz 5. Short term duration test pulse used to minimize self-heating effect. 1.5 1 8V VGS = 10V 8V 6V 5V 4V 3V 1.2 VDS = 10V Pulsed 10V 5V 4V 6V ID, DRAIN CURRENT (A) Notes: ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics 3V 0.9 0.6 TA = 150° C TA = 125° C 0.1 TA = 85° C TA = 25° C 0.3 TA = -25° C TA = -55° C 0.01 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DS30927 Rev. 2 - 2 0 1 3 2 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2 of 5 www.diodes.com DMN5L06DMK VGS(th), GATE THRESHOLD VOLTAGE (V) 10 VGS = 10V Pulsed VDS = 10V 0.9 ID = 1mA 0.8 TA = 85° C TA = 125° C Pulsed TA = 150° C 0.7 0.6 0.5 TA = -55° C 1 0.4 TA = 25° C TA = -25° C 0.3 0.2 0.1 0 -55 -25 25 0 75 50 100 0.1 0.001 150 125 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 0.1 0.01 1 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 2.0 VGS = 5V Pulsed TA = 125° C TA = 25° C Pulsed 1.8 TA = 85° C 1.6 TA = 150° C ID = 280mA 1.4 1.2 ID = 140mA 1 1.0 TA = -55° C TA = 25° C 0.8 TA = -25° C 0.6 0.4 0.2 0.1 0 1 0.1 0.01 0.001 0 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 2 4 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 3 1 VGS = 10V Pulsed VGS = 0V Pulsed 2 IDR, REVERSE DRAIN CURRENT (A) NEW PRODUCT 1.0 ID = 280mA ID = 140mA 1 TA = 150° C TA = 125° C 0.1 TA = 85° C TA = 25° C 0.01 TA = -25° C TA = -55° C 0 0.001 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (° C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature DS30927 Rev. 2 - 2 3 of 5 www.diodes.com 0 1 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage DMN5L06DMK |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDR, REVERSE DRAIN CURRENT (A) VGS = 10V 0.1 VGS = 0V 0.01 TA = 25°C Pulsed 0.001 0.2 0 0.6 0.4 0.8 1 1 VDS = 10V Pulsed TA = -55° C TA = -25° C TA = 25° C 0.1 TA = 85° C TA = 125° C TA = 150° C 0.01 0.001 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage 0.01 1 0.1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 250 Pd, POWER DISSIPATION (mW) NEW PRODUCT 1 200 150 100 50 R0JA = 556 ° C/W 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 11 Derating Curve - Total Ordering Information Notes: (Note 6) Device Packaging Shipping DMN5L06DMK-7 SOT-26 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS30927 Rev. 2 - 2 4 of 5 www.diodes.com DMN5L06DMK NEW PRODUCT Marking Information D2 G1 DAB = Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September S1 DAB YM S2 G2 D1 Date Code Key Year 2006 2007 2008 2009 Code T U V W Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30927 Rev. 2 - 2 5 of 5 www.diodes.com DMN5L06DMK