DIODES ES1B

ES1A - ES1G
1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
Features
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current Capability
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
Mechanical Data
SMA
B
A
Case: Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solder Plated Terminal - Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: Type Number & Date Code: See Below
Ordering Information: See Below
Weight: 0.064 grams (approx.)
Dim
Min
Max
A
2.29
2.92
B
4.00
4.60
C
1.27
1.63
D
0.15
0.31
C
D
J
H
Maximum Ratings and Electrical Characteristics
G
E
E
4.80
5.59
G
0.10
0.20
H
0.76
1.52
J
2.01
2.62
All Dimensions in mm
@ TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TT = 110C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage Drop
Symbol
ES1A
ES1B
ES1C
ES1D
ES1G
Unit
VRRM
VRWM
VR
50
100
150
200
400
V
VR(RMS)
35
70
105
140
280
V
IO
1.0
A
IFSM
30
A
1.25
@ IF = 0.6A
@ IF = 1.0A
VFM
@ TA = 25C
@ TA = 100C
IRM
5.0
200
A
Reverse Recovery Time (Note 1)
trr
20
ns
Typical Total Capacitance (Note 2)
CT
10
pF
RJT
40
C/W
Tj, TSTG
-65 to +150
C
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance, Junction to Terminal (Note 3)
Operating and Storage Temperature Range
Ordering Information
Notes:
0.90
0.98
V
(Note 4)
Device*
Packaging
Shipping
ES1x-13
SMA
5000/Tape & Reel
1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*x = Device type, e.g. ES1A-13.
Marking Information
YWW
XXXX
DS14001 Rev. 8 - 2
XXXX = Product type marking code, ex. ES1A
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
1 of 2
ES1A - ES1G
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
1.5
1.0
0.5
0
25
50
75
100
125
150
10
ES1A - ES1D
0.1
Tj = 25°C
IF Pulse Width: 300 µs
0.01
175
0
30
Single Half-Sine-Wave
(JEDEC Method)
20
10
0
10
0.4
0.8
1.2
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
IR, INSTANTANEOUS REVERSE CURRENT (µA)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
1
ES1G
1.0
100
Tj = 100°C
10
1.0
Tj = 25°C
0.1
100
0
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Surge Current Derating Curve
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
DS14001 Rev. 8 - 2
2 of 2
ES1A - ES1G