ROHM DAN217W_11

Data Sheet
Switching Diode
DAN217W
Applications
Rectifying small power
Dimensions(Unit : mm)
Land size figure(Unit : mm)
1.0
0.5
1.3
0.7
0.5
0.7
0.7
Features
Small mold type.(EMD3)
0.6
0.6
EMD3
Structure
Construction
Silicon epitaxial
Taping dimensions (Unit : mm)
φ1.55±0.1
φ1.5 0.1
00
2.0±0.05
0.3±0.1
φ0.5±0.1
8.0±0.2
0～0.1
1.8±0.1
5.5±0.2
1.8±0.2
3.5±0.05
1.75±0.1
4.0±0.1
0.9±0.2
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
Reverse voltage (DC)
VR
Forward current (Single)
IFM
Average rectified forward current
Io
Surge current (t=1us)
Isurge
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance between terminals
Ct
Reverse recovery time
trr
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Limits
80
80
300
100
4
150
150
55 to 150
Min.
-
Typ.
-
1/2
Unit
V
V
mA
mA
A
mW
C
C
Max.
1.2
0.1
3.5
4
Unit
V
μA
pF
ns
Conditions
IF=100mA
VR=70V
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50
2011.06 - Rev.B
Data Sheet
DAN217W
Electrical characteristics curves
Ta=125
Ta=150C
10
100000
Ta=125
Ta=25
Ta=150C
Ta=-25
1
0.1
Ta=75
1000
Ta=25
100
10
Ta=-25
1
200
400
600
800
1000 1200 1400
0
20
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
40
60
80
100
0
120
REVERSE CURRENT:IR(nA)
890
880
AVE:888.3
870
160
140
120
100
80
60
AVE:20.90
40
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
AVE:0.595
Ct DISPERSION MAP
10
REVERSE RECOVERY TIME:trr(ns)
2
1cyc
Ifsm
8.3ms
10
5
AVE:3.9
0
0.8
IR DISPERSION MAP
15
Ta=25C
VR=6V
IF=10mA
1.8
RL=100
n=10pcs
1.6
1.4
1.2
AVE:1.489
1
Ifsm
8.3ms 8.3ms
1cyc
5
0
1
IFSM DISPERSION MAP
5
0
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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100
100
9
Rth(j-c)
Mounted on epoxy board
10
IM=1m
IF=10m
time
1ms
0.001
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/2
8
7
6
5
4
3
AVE:1.60
AVE:6.48
2
1
300us
1
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
TRANSIENT
THAERMAL IMPEDANODE:Rth(°C/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Rth(j-a)
t
100
10
1000
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
10
20
Ta=25
C
f=1MHz
VR=0.5V
0.9
20
VF DISPERSION MAP
20
15
1
Ta=25C
VR=80V
n=30pcs
180
900
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
200
Ta=25C
VF=100mA
n=30pcs
910
5
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
920
FORWARD VOLTAGE:V F(mV)
1
0.1
0.1
0
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=75
PEAK SURGE
FORWARD CURRENT:I FSM(A)
100
0.01
PEAK SURGE
FORWARD CURRENT:I FSM(A)
f=1MH
10000
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:I F(mA)
1000
100
1000
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
2011.06 - Rev.B
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A