DMC3036LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features NE W PRODUCT • • • • • • • • • • Mechanical Data • • Complementary Pair MOSFETs Low On-Resistance • N-Channel: 36mΩ @ 10V 61mΩ @ 4.5V • P-Channel: 36mΩ @ -10V 64mΩ @ -4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOP-8L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.072g (approximate) • • • • • • D2 SOP-8L D2 S2 G2 D2 S1 D1 G1 D1 TOP VIEW Internal Schematic TOP VIEW Maximum Ratings N-CHANNEL Characteristic Unit V V Value -30 ±20 -6 -5 -21 Unit V V Symbol Value Unit PD 2.5 W RθJA 50 °C/W TJ, TSTG -55 to +150 °C ID Characteristic Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed Drain Current (Note 4) A A @TA = 25°C unless otherwise specified Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) S1 P-Channel MOSFET Value 30 ±20 6.9 5.8 24 IDM Maximum Ratings P-CHANNEL ID IDM A A @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range 1. 2. 3. 4. S2 N-Channel MOSFET TA = 25°C TA = 70°C Thermal Characteristics G1 Symbol VDSS VGSS Pulsed Drain Current (Note 4) Notes: G2 @TA = 25°C unless otherwise specified Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) D1 Device mounted on FR-4 PCB, on 2oz. Copper pads with RθJA = 50°C/W. No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Repetitive rating, pulse width limited by junction temperature. DMC3036LSD Document number: DS31311 Rev. 4 - 2 1 of 7 www.diodes.com October 2008 © Diodes Incorporated DMC3036LSD Electrical Characteristics N-CHANNEL NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ± 100 V μA nA VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) ⎯ 28 51 7.7 ⎯ 2.1 36 61 V ⎯ 1.2 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 6.9A VGS = 4.5V, ID = 5.0A VDS = 5V, ID = 6.9A VGS = 0V, IS = 1A pF pF pF Ω Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS |Yfs| VSD 1 ⎯ ⎯ ⎯ 0.5 Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 384 67 48 1.3 ⎯ ⎯ ⎯ ⎯ Total Gate Charge Qg ⎯ 4.3 ⎯ Gate-Source Charge Gate-Drain Charge Qgs Qgd ⎯ ⎯ 1.2 2.5 Electrical Characteristics P-CHANNEL Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage ⎯ ⎯ nC VDS = 15V, VGS = 0V, f = 1.0MHz VGS = 0V VDS = 0V, f = 1MHz VDS = 10V, VGS = 4.5V, ID = 10A VDS = 10V, VGS = 10V, ID = 10A VDS = 10V, VGS = 10V, ID = 10A VDS = 10V, VGS = 10V, ID = 10A @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ± 100 V μA nA VGS = 0V, ID = -250μA VDS = -24V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) ⎯ 30 53 8.8 ⎯ -2.2 36 64 V ⎯ -1.2 S V VDS = VGS, ID = -250μA VGS = -10V, ID = -6A VGS = -4.5V, ID = -5A VDS =-5V, ID = -6A VGS = 0V, IS = -1A 637 147 105 3.3 ⎯ ⎯ ⎯ ⎯ pF pF pF Ω 6.8 ⎯ Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS |Yfs| VSD -1 ⎯ ⎯ ⎯ -0.5 Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ Total Gate Charge Qg ⎯ Gate-Source Charge Gate-Drain Charge Qgs Qgd ⎯ ⎯ Notes: 8.6 mΩ Test Condition 13.7 1.6 4.2 ⎯ ⎯ mΩ nC Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VGS = 0V, VDS = 0V, f = 1MHz VDS = 15V, VGS = -4.5V, ID = 6A VDS = 15V, VGS = -10V, ID = 6A VDS = 15V, VGS = -10V, ID = 6A VDS = 15V, VGS = -10V, ID = 6A 5. Short duration pulse test used to minimize self-heating effect. DMC3036LSD Document number: DS31311 Rev. 4 - 2 2 of 7 www.diodes.com October 2008 © Diodes Incorporated DMC3036LSD N-CHANNEL 30 28 30 TA = -55°C TA = 25°C 24 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V Pulsed VGS = 10V 22 20 VGS = 4.5V 18 16 14 12 10 8 VGS = 3.5V 6 4 2 0 VGS = 3.0V TA = 85°C TA = 125°C 18 TA = 150°C 12 6 VGS = 2.5V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 5 1 1 2 3 4 5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 6 0.1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 4.5V 0.1 VGS = 4.5V VGS = 10V 0.01 0.08 TA = 85°C 0.06 TA = 25°C 0.04 TA = -55°C 0.02 0 2 4 6 8 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 4 On-Resistance vs. Drain Current & Temperature 0 1.6 0 VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.5 VGS = 10V ID = 10A 1.4 1.2 VGS = 4.5V ID = 5A 1.0 0.8 0.6 -50 TA = 150°C TA = 125°C 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Fig 3 On-Resistance vs. Drain Current & Gate Voltage RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 26 24 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Static Drain-Source On-Resistance vs. Ambient Temperature DMC3036LSD Document number: DS31311 Rev. 4 - 2 3 of 7 www.diodes.com 2.0 1.5 ID = 1mA ID = 250µA 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature October 2008 © Diodes Incorporated DMC3036LSD N-CHANNEL (continued) 1,000 20 f = 1MHz C, CAPACITANCE (pF) IS, SOURCE CURRENT (A) NEW PRODUCT 16 12 8 4 0 Ciss 100 Coss Crss TA = 25°C 10 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Total Capacitance 30 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 113°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 DMC3036LSD Document number: DS31311 Rev. 4 - 2 4 of 7 www.diodes.com October 2008 © Diodes Incorporated DMC3036LSD P-CHANNEL 30 24 VGS = -4.5V 18 TA = 85°C TA = 125°C TA = 150°C 18 16 14 12 12 10 8 VGS = -3.5V 6 4 2 0 TA = -55°C TA = 25°C -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VDS = 5V Pulsed VGS = -10V 22 20 6 VGS = -2.5V VGS = -2.0V 0 VGS = -3.0V 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Output Characteristics 0 1 5 1 2 3 4 5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 11 Typical Transfer Characteristics 6 0.1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = -4.5V 0.1 VGS = -4.5V VGS = -10V T A = 125°C TA = 85°C 0.06 TA = 25°C 0.04 TA = -55°C 0.02 0 5 10 15 20 25 30 -ID, DRAIN-SOURCE CURRENT (A) Fig 12 On-Resistance vs. Drain Current & Gate Voltage 10 2 4 6 8 -ID, DRAIN-SOURCE CURRENT (A) Fig 13 On-Resistance vs. Drain Current & Temperature 0 2.5 -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.6 1.4 1.2 1.0 TA = 150°C 0.08 0.01 0 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 30 28 26 24 VGS = -10V ID = -10A 0.8 VGS = -4.5V ID = -5A 0.6 -50 2.0 ID = 1mA 1.5 ID = -250µA 1.0 0.5 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 14 Static Drain-Source On-Resistance vs. Ambient Temperature DMC3036LSD Document number: DS31311 Rev. 4 - 2 5 of 7 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 15 Gate Threshold Variation vs. Ambient Temperature October 2008 © Diodes Incorporated DMC3036LSD P-CHANNEL (continued) 1,000 20 Ciss 12 C, CAPACITANCE (pF) -IS, SOURCE CURRENT (A) NEW PRODUCT 16 TA = 25°C 8 Coss 100 Crss 4 f = 1MHz 0 10 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 16 Reverse Drain Current vs. Source-Drain Voltage 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 17 Typical Total Capacitance 30 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 113°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 Ordering Information (Note 6) Part Number DMC3036LSD-13 Notes: Case SOP-8L Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information ( Top View ) 8 5 Logo C3036LD Part no. YY WW 1 DMC3036LSD Document number: DS31311 Rev. 4 - 2 4 6 of 7 www.diodes.com Xth week: 01~52 Year : "07" =2007 "08" =2008 October 2008 © Diodes Incorporated DMC3036LSD 0.254 Package Outline Dimensions NEW PRODUCT E1 E A1 L GAUGE PLANE SEATING PLANE DETAIL A h 7°~9° 45° DETAIL A A2 A A3 b e D SOP-8L Dim Min Max A 1.75 A1 0.08 0.25 A2 1.30 1.50 A3 0.20 Typ. b 0.3 0.5 D 4.80 5.30 E 5.79 6.20 E1 3.70 4.10 e 1.27 Typ. h 0.35 L 0.38 1.27 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMC3036LSD Document number: DS31311 Rev. 4 - 2 7 of 7 www.diodes.com October 2008 © Diodes Incorporated