DMG1016UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) ESD Protected Up to 2.5kV "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 7 Ordering Information: See Page 7 Weight: 0.006 grams (approximate) D1 G2 S2 Q2 Q1 S1 TOP VIEW ESD PROTECTED G1 D2 TOP VIEW Internal Schematic Maximum Ratings N-CHANNEL – Q1 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±6 V ID 1066 690 mA Symbol Value Unit Drain Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±6 V ID 845 548 mA Value Unit Steady State Drain Current (Note 1) TA = 25°C TA = 85°C Maximum Ratings P-CHANNEL – Q2 @TA = 25°C unless otherwise specified Characteristic Steady State Drain Current (Note 1) TA = 25°C TA = 85°C Thermal Characteristics – Total Device Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. 2. 3. @TA = 25°C unless otherwise specified Symbol PD 330 mW RθJA 379 °C/W TJ, TSTG -55 to +150 °C Device mounted on FR-4 PCB with minimum recommended pad layout. No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMG1016UDW Document number: DS31860 Rev. 3 - 2 1 of 8 www.diodes.com October 2009 © Diodes Incorporated DMG1016UDW NEW PRODUCT Electrical Characteristics N-CHANNEL – Q1 @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 100 ±1.0 V nA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 RDS (ON) - |Yfs| VSD - 1.0 0.45 0.6 0.75 1.2 V Static Drain-Source On-Resistance 0.3 0.4 0.5 1.4 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS = 10V, ID = 400mA VGS = 0V, IS = 150mA Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf - 60.67 9.68 5.37 736.6 93.6 116.6 5.1 7.4 26.7 12.3 - Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS (Note 5) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Electrical Characteristics P-CHANNEL – Q2 Ω S V pF pF pF pC pC pC ns ns ns ns Test Condition VDS = 16V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -100 ±2.0 V nA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 RDS (ON) - |Yfs| VSD - -1.0 0.75 1.05 1.5 -1.2 V Static Drain-Source On-Resistance 0.5 0.7 1.0 0.9 -0.8 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS = -10V, ID = -250mA VGS = 0V, IS = -150mA Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf - 59.76 12.07 6.36 622.4 100.3 132.2 5.1 8.1 28.4 20.7 - Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS (Note 5) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω S V pF pF pF pC pC pC ns ns ns ns Test Condition VDS = -16V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -250mA VDD = -10V, VGS = -4.5V, RL = 47Ω, RG = 10Ω 4. Short duration pulse test used to minimize self-heating effect. 5. Guaranteed by design. Not subject to production testing. DMG1016UDW Document number: DS31860 Rev. 3 - 2 2 of 8 www.diodes.com October 2009 © Diodes Incorporated DMG1016UDW N-CHANNEL – Q1 1.0 1.0 VGS = 8.0V VGS = 4.5V 0.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V 0.6 VGS = 2.5V VGS = 2.0V 0.4 VGS = 1.5V 0.6 0.4 T A = 150°C 0.2 0.2 TA = 125°C VGS = 1.2V TA = -55°C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.8 0.7 0.6 0.5 0.4 VGS = 1.8V 0.3 VGS = 2.5V VGS = 4.5V 0.2 0.1 0 0 T A = 85°C TA = 25°C 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 2 0.5 TA = 150°C 0.4 T A = 125°C TA = 85°C 0.3 T A = 25°C 0.2 TA = -55°C 0.1 0 0 1.0 1.7 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.0 0.8 1.5 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 0.8 1.3 1.1 0.9 VGS = 4.5V ID = 500mA 0.6 VGS = 2.5V ID = 250mA 0.4 VGS = 4.5V ID = 500mA 0.2 VGS = 2.5V ID = 250mA 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG1016UDW Document number: DS31860 Rev. 3 - 2 3 of 8 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature October 2009 © Diodes Incorporated DMG1016UDW N-CHANNEL – Q1 (continued) IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 1.2 0.8 ID = 1mA ID = 250µA 0.4 0.8 TA = 25°C 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 100 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 TA = 150°C 10 IDSS, LEAKAGE CURRENT (nA) Ciss C, CAPACITANCE (pF) Coss C rss 100 TA = 125°C T A = 85°C 10 TA = 25°C 1 1 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0 0 20 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) 20 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1.6 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 260°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG1016UDW Document number: DS31860 Rev. 3 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 4 of 8 www.diodes.com 10 100 1,000 October 2009 © Diodes Incorporated DMG1016UDW P-CHANNEL – Q2 1.0 1.0 VGS = -8.0V VGS = -4.5V VDS = -5V -ID, DRAIN CURRENT (A) VGS = -3.0V 0.6 VGS = -2.5V VGS = -2.0V 0.4 0.2 0.8 0.6 0.4 T A = 150°C 0.2 VGS = -1.5V TA = 125°C TA = 85°C T A = 25°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristic 0 5 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 1.4 1.2 VGS = -1.8V 1.0 0.8 VGS = -2.5V 0.6 0.4 VGS = -4.5V 0.2 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage 1.0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) 1.7 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 0.8 1.5 1.3 1.1 0.9 VGS = -4.5V ID = -500mA VGS = -2.5V ID = -250mA 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 16 On-Resistance Variation with Temperature DMG1016UDW Document number: DS31860 Rev. 3 - 2 5 of 8 www.diodes.com TA = -55°C 0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 13 Typical Transfer Characteristic 3.0 1.0 VGS = -4.5V 0.8 TA = 150°C TA = 125°C 0.6 T A = 85°C TA = 25°C 0.4 TA = -55°C 0.2 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Temperature 1.0 1.0 0.8 VGS = -2.5V ID = -250mA 0.6 VGS = -4.5V ID = -500mA 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 17 On-Resistance Variation with Temperature October 2009 © Diodes Incorporated DMG1016UDW P-CHANNEL – Q2 (continued) 1.0 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 ID = -1mA 0.8 ID = -250µA 0.4 0.8 TA = 25°C 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature 0 0.2 100 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current 1,000 T A = 150°C -IDSS, LEAKAGE CURRENT (nA) Ciss C, CAPACITANCE (pF) Coss 10 Crss TA = 125°C 100 10 TA = 85°C T A = 25°C 1 1 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Total Capacitance 0 20 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Leakage Current vs. Drain-Source Voltage 20 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1.6 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA R θJA = 260°C/W D = 0.02 P(pk) 0.01 D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG1016UDW Document number: DS31860 Rev. 3 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 22 Transient Thermal Response 6 of 8 www.diodes.com 10 100 1,000 October 2009 © Diodes Incorporated DMG1016UDW Ordering Information (Note 6) Part Number DMG1016UDW-7 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information CA1 Date Code Key Year Code 2009 W Month Code 2010 X Jan 1 Feb 2 Mar 3 YM NEW PRODUCT Notes: Case SOT-363 CA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 2012 Z Jun 6 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C H K M J D L F SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DMG1016UDW Document number: DS31860 Rev. 3 - 2 7 of 8 www.diodes.com October 2009 © Diodes Incorporated DMG1016UDW IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com DMG1016UDW Document number: DS31860 Rev. 3 - 2 8 of 8 www.diodes.com October 2009 © Diodes Incorporated