DMDT9922 PNP DUAL, MATCHED PAIR SURFACE MOUNT TRANSISTOR ADVANCE INFORMATION Features · · · · Epitaxial Planar Die Construction Low Noise High Current Gain Matched Pair of Transistors SOT-363 A C2 · · · E1 KXX Mechanical Data · · B1 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K3S Weight: .006 grams (approx.) E2 B2 B C C1 H K M J D F L Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol DMDT9922 Unit Collector-Base Voltage Characteristic VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector-Collector Voltage VCCO -50 V Emitter-Emitter Voltage VEEO -50 V IC -100 mA Pd Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range 200 mW RqJA 625 K/W Tj, TSTG -55 to +125 °C D E V O R P OR N P A T F IO N T U NO U B I R T S DI DS30142 Rev. 1P-5 1 of 2 DMDT9922 ADVANCE INFORMATION Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -50 ¾ ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾ ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ ¾ V IE = -50mA, IC = 0 Collector-Base Leakage Current ICBO ¾ -0.3 -500 nA VCB = -30V Emitter-Base Leakage Current IEBO ¾ ¾ -500 nA VEB = -4.0V Collector-Emitter Leakage Current ICES ¾ -4 -1000 nA VCE = -40V OFF CHARACTERISTICS (Note 2) IC = -50mA, IE = 0 ON CHARACTERISTICS (Note 2) hFE 300 450 555 ¾ IC = -1.0mA, VCE = -6.0V VCE(SAT) VCE(SAT) ¾ ¾ -0.1 -0.1 -0.5 ¾ V V IC = -50mA, IB = -5.0mA IC = -1mA, IB = -0.1mA Base-Emitter Impedance rbe ¾ -0.5 ¾ W IC = -10mA to -1mA Emitter-Base Offset Voltage VOS ¾ 10 ¾ mV VCB = 0V, IC = -1mA to -1mA Change in Emitter-Base Offset Voltage vs. Collector-Base Voltage (CMRR) DVOS/ DVCB ¾ 10 ¾ mV VCB = 0V, IC = -1mA to -1mA Change in Emitter-Base Offset Voltage vs. Collector-Current DVOS/ DIC ¾ 5 ¾ mV VCB = 0V, IC = -10mA to -1mA TC VOS ¾ 0.5 ¾ mV/°C DC Current Gain Collector-Emitter Saturation Voltage Average Offset Voltage Drift Emitter-Base Offset Current Change in Emitter-Base Offset Current vs. Collector-Base Voltage Average Offset Current Drift Collector-Collector Leakage Current IC = -10mA to -1mA IOS ¾ 8 ¾ nA IC = -10mA, VCB = 0V DIOS/ DVCB ¾ 30 ¾ nA VCB = 0 to -50V TC IOS ¾ 50 ¾ pA/°C IC = -10mA ICC ¾ 35 ¾ pA VCE = -40V -4 15 pF VCB = -10V, f = 1.0MHz, IE = 0 SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo Input Capacitance Cibo ¾ ¾ 70 pF VEB = -0.5V, IC = 0, f = 1MHz Output Conductance hOE ¾ 10 ¾ mS IC = -1mA, VCE = -5V 170 ¾ MHz Current Gain-Bandwidth Product Notes: fT VCE = -12V, IC = -2.0mA, f = 100MHz 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. D E V O R P OR N P A T F IO N T U NO U B I R T S DI DS30142 Rev. 1P-5 2 of 2 DMDT9922