MMDT4413 NEW PRODUCT COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 KXX E2 Mechanical Data · · · · · Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K13 Weight: 0.006 grams (approx.) Maximum Ratings, NPN 4401 Section Characteristic E1 B2 B C C1 H K M J D F L Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm Note: E1, B1, and C1 = PNP 4403 Section, E2, B2, and C2 = NPN 4401 Section. Type marking indicates orientation. @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 600 mA Power Dissipation (Note 1, 2) Pd 200 mW RqJA 625 K/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Maximum Ratings, PNP 4403 Section Characteristic @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V IC -600 mA Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: Pd 200 mW RqJA 625 K/W Tj, TSTG -55 to +150 °C 1. Valid provided that terminals are kept at ambient temperature. 2. Maximum combined dissipation. DS30121 Rev. 3P-1 1 of 4 MMDT4413 NEW PRODUCT Electrical Characteristics, NPN 4401 Section Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 100mA, IC = 0 ICEX ¾ 100 nA VCE = 35V, VEB(OFF) = 0.4V IBL ¾ 100 nA VCE = 35V, VEB(OFF) = 0.4V hFE 20 40 80 100 40 ¾ ¾ ¾ 300 ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base- Emitter Saturation Voltage VBE(SAT) 0.75 ¾ 0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Ccb ¾ 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ¾ 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 40 500 ¾ Output Admittance hoe 1.0 30 mS fT 250 ¾ MHz Delay Time td ¾ 15 ns Rise Time tr ¾ 20 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 30 ns OFF CHARACTERISTICS (Note 3) Collector Cutoff Current Base Cutoff Current IC = 100mA, IE = 0 ON CHARACTERISTICS (Note 3) DC Current Gain IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 1.0V 1.0V 1.0V 1.0V 2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS Notes: VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30121 Rev. 3P-1 2 of 4 MMDT4413 NEW PRODUCT Electrical Characteristics, PNP 4403 Section Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -100mA, IC = 0 ICEX ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 ¾ ¾ ¾ 300 ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base- Emitter Saturation Voltage VBE(SAT) -0.75 ¾ -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Output Capacitance Ccb ¾ 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ¾ 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 60 500 ¾ Output Admittance hoe 1.0 100 mS fT 200 ¾ MHz Delay Time td ¾ 15 ns Rise Time tr ¾ 20 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 30 ns OFF CHARACTERISTICS (Note 3) Collector Cutoff Current Base Cutoff Current IC = -100mA, IE = 0 ON CHARACTERISTICS (Note 3) DC Current Gain IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS Notes: VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30121 Rev. 3P-1 3 of 4 MMDT4413 2.0 CAPACITANCE (pF) 20 VCE COLLECTOR-EMITTER VOLTAGE (V) 30 Cibo 10 5.0 Cobo 1.0 1.0 0.1 VCE COLLECTOR-EMITTER VOLTAGE (V) 20 CAPACITANCE (pF) Cibo 10 5.0 Cobo -10 -30 REVERSE VOLTS (V) Fig. 3 (4403) Capacitances (Typical) DS30121 Rev. 3P-1 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 100 IB BASE CURRENT (mA) Fig. 2 (4401) Typical Collector Saturation Region 30 -1.0 IC = 10mA 1.6 REVERSE VOLTS (V) Fig. 1 (4401) Capacitances (Typical) 1.0 -0.1 IC = 1mA 0 0.001 50 10 IC = 30mA 1.8 1.6 1.4 1.2 IC = 10mA IC = 1mA IC = 100mA IC = 30mA IC = 300mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IB BASE CURRENT (mA) Fig. 4 (4403) Typical Collector Saturation Region 4 of 4 MMDT4413