SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FCX493 ✪ ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE – FCX593 PARTMARKING DETAIL – N93 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Peak Pulse Current ICM 2 A 200 mA Base Current IB Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO 120 V IC=100µA VCEO(sus) 100 V IC=10mA* V(BR)EBO 5 V IE=100µA Collector Cut-Off Currents MAX. ICBO 100 nA VCB=100V ICES 100 nA VCES=100V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.6 V V IC=500mA, IB=50mA IC=1A, IB=100mA Base-Emitter Saturation Voltage VBE(sat) 1.15 V IC=1A, IB=100mA Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=1A, VCE=10V Static Forward Current Transfer Ratio hFE 100 100 60 20 Transition Frequency fT 150 Collector-Base Breakdown Voltage Cobo IC=1mA, VCE=10V* IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* 300 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical Characteristics graphs see FMMT493 datasheet. 3 - 88