ZETEX FCX493

SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
FCX493
✪
ISSUE 3 - NOVEMBER 1995
COMPLEMENTARY TYPE –
FCX593
PARTMARKING DETAIL –
N93
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
1
A
Peak Pulse Current
ICM
2
A
200
mA
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
1
W
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Breakdown Voltages
V(BR)CBO
120
V
IC=100µA
VCEO(sus)
100
V
IC=10mA*
V(BR)EBO
5
V
IE=100µA
Collector Cut-Off Currents
MAX.
ICBO
100
nA
VCB=100V
ICES
100
nA
VCES=100V
Emitter Cut-Off Current
IEBO
100
nA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.3
0.6
V
V
IC=500mA, IB=50mA
IC=1A, IB=100mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.15
V
IC=1A, IB=100mA
Base-Emitter
Turn On Voltage
VBE(on)
1.0
V
IC=1A, VCE=10V
Static Forward Current
Transfer Ratio
hFE
100
100
60
20
Transition Frequency
fT
150
Collector-Base
Breakdown Voltage
Cobo
IC=1mA, VCE=10V*
IC=250mA, VCE=10V*
IC=500mA, VCE=10V*
IC=1A, VCE=10V*
300
10
MHz
IC=50mA, VCE=10V
f=100MHz
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT493 datasheet.
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