SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 MARCH 1995 FZT549 ✪ PARTMARKING DETAIL FZT549 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). TYP. MAX. 2 W -55 to +150 °C PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -35 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -30 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 -10 µA µA VCB=-30V VCB=-30V, Tamb=100°C Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.50 -0.75 V V IC=-1A, IB =-100mA* IC=-2A, IB -200mA* Base-Emitter Saturation Voltage VBE(sat) -1.25 V IC=-1A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 V IC =-1A, VCE =-2V* Static Forward Current hFE 70 100 80 30 Transition Frequency fT 100 Output Capacitance Cobo IC=-50mA, VCE =-2V IC =-500mA, VCE =-2V* IC =-1A, VCE =-2V* IC =-2A, VCE =-2V* 300 10 MHz IC=-100mA, VCE=-5V, f =100MHz pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT549 datasheet. 3 - 191